Display device including third conductive layer directly contacting first conductive layer and second conductive layer

1. A display device comprising:

a base substrate;

a buffer layer disposed on the base substrate;

an active layer disposed on the buffer layer;

a first gate insulation layer disposed on the active layer;

a first conductive layer disposed on the first gate insulation layer and which is a single-layer including an aluminum alloy;

a second gate insulation layer disposed on the first conductive layer;

a second conductive layer disposed on the second gate insulation layer and which is a single-layer including an aluminum alloy;

an insulation interlayer disposed on the second conductive layer; and

a third conductive layer disposed on the insulation interlayer, directly contacting the first conductive layer through a first gate contact hole defined in the insulation interlayer and the second gate insulation layer, and directly contacting the second conductive layer through a second gate contact hole defined in the insulation interlayer,

wherein a thickness of a first portion of the first conductive layer which directly contacts the third conductive layer is less than a thickness of a second portion of the first conductive layer which does not directly contact the third conductive layer.

2. The display device of claim 1 , wherein the aluminum alloy of the first conductive layer includes at least one of nickel (Ni), lanthanum (La), neodymium (Nd), and germanium (Ge).

3. The display device of claim 2 , wherein a content of materials other than aluminum in the aluminum alloy of the first conductive layer is less than or equal to about 2 atomic percentages (at %).

4. The display device of claim 1 , wherein the aluminum alloy of the first conductive layer includes nickel (Ni) and lanthanum (La).

5. The display device of claim 4 , wherein a sum of a content of nickel and a content of lanthanum in the aluminum alloy of the first conductive layer is about 0.02 at % to about 0.15 at %.

6. The display device of claim 4 , wherein in the aluminum alloy of the first conductive layer, a content of nickel is about 0.01 at % to about 0.05 at %, and

wherein a content of lanthanum is about 0.01 at % to about 0.1 at %.

7. The display device of claim 1 , wherein

a thickness of a first portion of the second conductive layer which directly contacts the third conductive layer is less than a thickness of a second portion of the second conductive layer which does not directly contact the third conductive layer.

8. The display device of claim 1 , wherein the active layer includes polycrystalline silicon.

9. The display device of claim 1 , wherein the first conductive layer and the second conductive layer form a storage capacitor.

10. The display device of claim 1 , wherein the second conductive layer includes a shielding electrode.

11. The display device of claim 1 , wherein the second conductive layer includes an initialization voltage line.

12. The display device of claim 1 , wherein the third conductive layer includes a power voltage line.

13. The display device of claim 1 , further comprising:

a planarization layer disposed on the third conductive layer;

a first electrode disposed on the planarization layer;

an emission layer disposed on the first electrode; and

a second electrode disposed on the emission layer.

14. A display device comprising:

a base substrate;

a buffer layer disposed on the base substrate;

an active layer disposed on the buffer layer;

a first gate insulation layer disposed on the active layer;

a first conductive layer disposed on the first gate insulation layer and which is a single-layer including an aluminum alloy;

a second gate insulation layer disposed on the first conductive layer;

a second conductive layer disposed on the second gate insulation layer and which is a single-layer including an aluminum alloy;

an insulation interlayer disposed on the second conductive layer;

a third conductive layer disposed on the insulation interlayer, directly contacting the first conductive layer through a first gate contact hole defined in the insulation interlayer and the second gate insulation layer, and directly contacting the second conductive layer through a second gate contact hole defined in the insulation interlayer; and

a bendable area,

wherein a first opening overlapping the bendable area in a plan view is defined in the insulation interlayer, the second gate insulation layer, the first gate insulation layer, and a first portion of the buffer layer, and

wherein a second opening overlapping the bendable area in the plan view is defined in a second portion of the buffer layer and a portion of the base substrate.

15. The display device of claim 14 , wherein the base substrate includes:

a first organic layer;

a first barrier layer disposed on the first organic layer;

a second organic layer disposed on the first barrier layer; and

a second barrier layer disposed on the second organic layer, and

wherein the buffer layer includes:

a first buffer layer disposed on the base substrate and including silicon oxide; and

a second buffer layer disposed on the first buffer layer and including silicon nitride.

16. The display device of claim 15 , wherein the first portion of the buffer layer is the second buffer layer,

wherein the second portion of the buffer layer is the first buffer layer, and

wherein the portion of the base substrate is the second barrier layer.

17. The display device of claim 14 , wherein a width of the first opening is greater than a width of the second opening.