Integrated photonics optical gyroscopes with improved sensitivity utilizing high density silicon nitride waveguides
Aspects of the present disclosure are directed to structural modifications introduced in a waveguide structure in order to more tightly pack adjacent waveguide turns in an optical gyroscope fabricated on a planar silicon platform as a photonic integrated circuit. Increasing number of turns of the gyroscope coil increases total waveguide length as well as enclosed area of the gyroscope loop, which translates to increased sensitivity to rotational measurement.
1. An integrated photonics chip comprising:
a waveguide coil comprising a plurality of waveguide turns looping around a central area enclosed by the waveguide coil, each waveguide turn being parallel to adjacent waveguide turns, wherein each waveguide turn comprises a waveguide core sandwiched between an upper cladding and a lower cladding; and
a structural modification introduced on either side of each waveguide turn to reduce crosstalk between the adjacent waveguide turns, thereby increasing a spatial density of waveguide turns that can be fabricated within a predetermined area of the integrated photonics chip, wherein the structural modification comprises a gap.
2. The integrated photonics chip of claim 1 , wherein the predetermined area depends on an exposure field of a reticle used to fabricate the waveguide coil with the plurality of turns.
3. The integrated photonics chip of claim 1 , wherein the waveguide coil is used as a rotational sensing element of an optical gyroscope.
4. The integrated photonics chip of claim 3 , wherein increasing spatial density of waveguide turns increases the central area enclosed within the waveguide coil, as well as increases a number of waveguide turns enclosing the central area, thereby increasing sensitivity of the rotational sensing element.
5. The integrated photonics chip of claim 1 , wherein each waveguide turn comprises a waveguide core sandwiched between an upper cladding and a lower cladding.
6. The integrated photonics chip of claim 1 , wherein the waveguide core comprises silicon nitride and the upper cladding and lower cladding comprise oxide.
7. The integrated photonics chip of claim 1 , wherein the gap is filled with a fluid.
8. The integrated photonics chip of claim 1 , wherein the gap is filled with air.
9. The integrated photonics chip of claim 7 , wherein the fluid comprises a non-reactive liquid or gas creating a fluid barrier between two adjacent waveguide turns.
10. The integrated photonics chip of claim 1 , wherein the gap is in the form of a high-aspect-ratio rectangular slit or trench with a longitudinal dimension of the gap being substantially higher than a lateral dimension of the gap.
11. The integrated photonics chip of claim 10 , wherein the longitudinal dimension of the gap extends through the upper cladding past the waveguide core deep into the lower cladding, wherein the longitudinal dimension of the gap is substantially above and below a longitudinal dimension of the waveguide core adjacent to it.
12. The integrated photonic chip of claim 1 , wherein a pitch between adjacent waveguide turns is in the range of 10 micron.