IP Library Granted Patent US 11,658,052
Granted Patent B2
US 11,658,052 · App. 17/367,067 · Granted May 23, 2023

Chip transferring method and the apparatus thereof

Inventors: Min-Hsun Hsieh (Hsinchu, TW); De-Shan Kuo (Hsinchu, TW); Chang-Lin Lee (Hsinchu, TW); Jhih-Yong Yang (Hsinchu, TW)
Assignee: EPISTAR CORPORATION
H01L21/67721H01L21/6773H01L21/67144H01L21/67288H01L21/6836H01L33/0075H01L2221/68322H01L2221/68354H01L2221/68368
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Quick Facts
Patent No.
US 11,658,052
App. No.
17/367,067
Granted
May 23, 2023
Kind
B2
Abstract

A chip transferring method includes providing a plurality of chips on a first load-bearing structure; measuring a photoelectric characteristic value of each of the plurality of chips; categorizing the plurality of chips into a first portion chips and a second portion chips according to the photoelectric characteristic value of each of the plurality of chips; providing a second load-bearing structure; weakening a first adhesion between the first portion chips and the first load-bearing structure or between the second portion chips and the first load-bearing structure; and transferring the first portion chips or the second portion chips to the second load-bearing structure.

Claims (27)

1. A chip transferring method, comprising

providing a plurality of chips on a first load-bearing structure;

measuring a photoelectric characteristic value of each of the plurality of chips;

categorizing the plurality of chips into a first portion chips and a second portion chips according to the photoelectric characteristic value of each of the plurality of chips, wherein each of the first portion chips respectively comprises a first photoelectric characteristic value which falls within a defined photoelectric characteristic value range, and each of the second portion chips respectively comprises a second photoelectric characteristic value which does not fall within the defined photoelectric characteristic value range;

providing a second load-bearing structure;

weakening a first adhesion between the first portion chips and the first load-bearing structure or between the second portion chips and the first load-bearing structure; and

transferring the first portion chips after weakening the first adhesion between the first portion chips and the first load-bearing structure or transferring the second portion chips after weakening the first adhesion between the second portion chips and the first load-bearing structure to the second load-bearing structure,

wherein the defined photoelectric characteristic value range is divided into a plurality of sub-ranges.

2. The chip transferring method according to claim 1 , wherein the first load-bearing structure comprises a first surface and a back surface, each of the plurality of chips respectively comprises an attaching surface and attaches the first surface with the attaching surface, and the first adhesion is between the first surface and the attaching surface.

3. The chip transferring method according to claim 2 , wherein the step of weakening the first adhesion comprises a peptization process.

4. The chip transferring method according to claim 3 , wherein the peptization process comprises coating a peptizer on the first surface or the back surface.

5. The chip transferring method according to claim 3 , wherein the peptization process comprises illuminating the first load-bearing structure with UV light.

6. The chip transferring method according to claim 1 , wherein after the step of transferring, further comprising dividing the first portion chips into a plurality of virtual blocks according to the photoelectric characteristic value, and each of the plurality of virtual blocks comprises multiple chips of the plurality of chips.

7. The chip transferring method according to claim 6 , further comprising transferring the first portion chips in one of the virtual blocks to a third load-bearing structure in single-batch.

8. The chip transferring method according to claim 7 , further comprising transferring the first portion chips in another one of the virtual blocks to the third load-bearing structure, wherein the first portion chips in the one of the virtual blocks and the first portion chips in the another one of the virtual blocks comprise similar photoelectric characteristic values.

9. The chip transferring method according to claim 7 , wherein the first portion chips in the one of the virtual blocks are transferred to the third load-bearing structure in single-batch by a transfer mechanism.

10. The chip transferring method according to claim 9 , wherein the transfer mechanism comprises a pressing face, and an area of the pressing face is larger than or equal to an area of the one of the virtual blocks.

11. The chip transferring method according to claim 7 , wherein the first load-bearing structure, the second load-bearing structure or/and the third load-bearing structure comprises a white film tape, a blue film tape or a UV tape.

12. The chip transferring method according to claim 6 , further comprising dividing the first load-bearing structure or the second load-bearing structure, where the first portion chips disposed on, into a plurality of blocks according to the plurality of virtual blocks.

13. The chip transferring method according to claim 12 , wherein after the step of dividing the first portion chips into the plurality of virtual blocks, further comprising calculating an average photoelectric characteristic value range of each of the plurality of virtual blocks.

14. The chip transferring method according to claim 13 , further comprising removing the chips of each of the plurality of virtual block whose photoelectric characteristic value do not fall within the average photoelectric characteristic value range of each of the plurality of virtual blocks.

15. The chip transferring method according to claim 13 , further comprises categorizing the plurality of virtual blocks into the plurality of sub-ranges according to the average photoelectric characteristic value range of each of the plurality of virtual blocks.

16. The chip transferring method according to claim 1 , wherein the photoelectric characteristic value comprises a luminescence, a light-emitting wavelength, an operating voltage or an electric current.

17. The chip transferring method according to claim 1 , further comprising fixing the first load-bearing structure on a metal expansion ring to expand the first load-bearing structure.

18. The chip transferring method according to claim 1 , further comprising forming a wafer map file based on a position of each of the plurality of chips and the photoelectric characteristic value of each of the plurality of chips.

19. The chip transferring method according to claim 1 , further comprises changing a second adhesion between the first portion chips and the second load-bearing structure or between the second portion chips and the second load-bearing structure.

20. The chip transferring method according to claim 19 , wherein an adhesion difference between the first adhesion and the second adhesion is between 0.4N and 2.5N.

Assignments (2)
CHANGE OF NAME Recorded Feb 26, 2026
From: EPISTAR CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075152/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 7, 2021
From: HSIEH, MIN-HSUN; KUO, DE-SHAN; LEE, CHANG-LIN; YANG, JHIH-YONG
To: EPISTAR CORPORATION
Reel/Frame 056780/0199 →
Priority Claims (1)
TW 107102652 · Jan 25, 2018 · national
Continuity (2)
Continuation 16257886 · Jan 25, 2019
Related Publication 20210335641A1 · Oct 28, 2021
Cited By (1)
US 12,518,995