IP Library Granted Patent US 12,030,819
Granted Patent B2
US 12,030,819 · App. 17/367,380 · Granted Jul 9, 2024

Doped SiC and SiOC compositions and Methods

Inventors: Douglas M. Dukes (Troy, NY); Ashish P. Diwanji (New Albany, OH); Andrew R. Hopkins (Sylvania, OH); Walter J. Sherwood (Glenville, NY); Glenn Sandgren (Ambler, PA); Mark S. Land (Houston, TX); Brian L. Benac (Hadley, NY)
Assignee: Pallidus, Inc.
C04B35/571C01B32/956C01B32/977C04B35/515C04B35/56C04B35/5603C04B35/80C08G77/20C08G77/50C08L83/00C08L83/04C04B2235/3418C04B2235/3826C04B2235/44C04B2235/48C04B2235/483C04B2235/528C04B2235/5427C04B2235/5436C04B2235/5445C04B2235/6581C04B2235/72C04B2235/721C04B2235/727C04B2235/77C04B2235/785C04B2235/94C04B2235/96C08G77/12C08G77/80
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Quick Facts
Patent No.
US 12,030,819
App. No.
17/367,380
Granted
Jul 9, 2024
Kind
B2
Abstract

Materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC. Doped SiOC and SiC materials for providing semiconductor properties to SiC wafers, including p- and n-type properties.

Claims (23)

1. A filled silicon carbide composition comprising:

a. polymer derived SiC particles;

b. wherein the particles consist essentially of a ceramic having a filler bound into the ceramic;

c. wherein the filler is selected to provide a predetermined property to a silicon carbide wafer and wherein the filler comprises a dopant;

d. wherein the particles have less than 0.001% impurities; and

e. wherein the predetermined property is a p-type feature.

2. A filled silicon carbide composition comprising:

a. polymer derived SiC particles;

b. wherein the particles consist essentially of a ceramic having a filler bound into the ceramic;

c. wherein the filler is selected to provide a predetermined property to a silicon carbide wafer and wherein the filler comprises a dopant;

d, wherein the particles have less than 0.001% impurities; and

e. wherein the predetermined property is a n-type feature.

3. A filled polysilocarb composition comprising:

a. polymer derived SOC particles;

b. wherein the particles consist essentially of a ceramic having a filler bound into the ceramic;

c. wherein the filler is selected to provide a predetermined property to a silicon carbide wafer; and,

d. wherein the particles have less than 0.001% impurities.

4. The polysilocarb composition of claim 3 , wherein the filler comprises a dopant.

5. The polysilocarb composition of claim 4 , wherein the predetermined property is a band gap.

6. The polysilocarb composition of claim 4 , wherein the predetermined property is a semiconductor feature.

7. The polysilocarb composition of claim 4 , wherein the predetermined property is a p-type feature.

8. The polysilocarb composition of claim 4 , wherein the predetermined property is a n-type feature.

9. The polysilocarb composition of claim 3 , wherein the filler is a dopant.

Assignments (2)
SECURITY INTEREST Recorded Jan 10, 2025
From: PALLIDUS, INC.
To: R&R PALLIDUS HOLDINGS II LLC, AS ADMINISTRATIVE AGENT
Reel/Frame 069818/0486 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 22, 2024
From: MELIOR INNOVATIONS, INC.
To: PALLIDUS, INC.
Reel/Frame 067499/0530 →
Continuity (13)
Continuation 16442915 · Jun 17, 2019
Division 15924141 · Mar 16, 2018
Division 14864498 · Sep 24, 2015
Continuation In Part 14634814 · Feb 28, 2015
Continuation In Part 14268150 · May 2, 2014
Continuation In Part 14212896 · Mar 14, 2014
Provisional Application 62112025 · Feb 4, 2015
Provisional Application 62055461 · Sep 25, 2014
Provisional Application 62055497 · Sep 25, 2014
Provisional Application 62055397 · Sep 25, 2014
Provisional Application 61946598 · Feb 28, 2014
Provisional Application 61818981 · May 3, 2013
Related Publication 20220002207A1 · Jan 6, 2022