Methods for etching structures and smoothing sidewalls
A method for patterning a material layer on a substrate includes forming a hard mask layer on a material layer disposed on a substrate, the material layer comprising a plurality of first layers and a plurality of second layers alternately formed over the substrate, performing a first etch process to form features in the material layer through the hard mask layer by supplying a first etching gas, and performing a second etch process to smooth sidewalls of the features formed in the material layer by suppling a second etching gas. The first etching gas is supplied continuously and the second etching gas is pulsed.
1. A method for patterning a material layer on a substrate, comprising:
forming a hard mask layer on a material layer disposed on a substrate, the material layer comprising a plurality of first layers and a plurality of second layers alternately formed over the substrate;
performing a first etch process to form features in the material layer through the hard mask layer by supplying a first etching gas; and
performing a second etch process to smooth sidewalls of the features formed in the material layer by suppling a second etching gas, wherein
the first etching gas is supplied continuously and the second etching gas is pulsed.
2. The method of claim 1 , wherein the plurality of first layers comprises molybdenum (Mo) and the plurality of second layers comprises tungsten (W).
3. The method of claim 1 , wherein
the material layer has a thickness of between 200 nm and 4500 nm, and
the plurality of first layers and the plurality of second layers each have a thickness of between 10 nm and 30 nm.
4. The method of claim 1 , wherein during the second etch process, passivation gas and Ar gas are also supplied.
5. The method of claim 4 , wherein
the first etching gas comprises Cl 2 , and
the second etching gas comprises SF 6 .
6. The method of claim 4 , wherein
the passivation gas comprises HBr.
7. The method of claim 6 , wherein during the second etch process, the second etching gas is pulsed at a pulse duration of between 1 second and 10 seconds and a duty cycle of between 1:3 and 3:1.
8. The method of claim 1 , wherein the hard mask layer comprises tetra-ethyl-orthosilicate (TEOS).
9. A method for etching a material layer on a substrate through a hard mask in a processing chamber, comprising:
supplying a first etching gas to a material layer having a hard mask formed thereon in a processing chamber, the material layer comprising a plurality of first layers and a plurality of second layers alternately formed over a substrate; and
subsequent to supplying the first etching gas, supplying a second etching gas into features etched in the material layer by the first etching gas, wherein
the first etching gas is supplied continuously and the second etching gas is pulsed.
10. The method of claim 9 , wherein the plurality of first layers comprises molybdenum (Mo) and the plurality of second layers comprises tungsten (W).
11. The method of claim 9 , wherein
the material layer has a thickness of between 200 nm and 4500 nm, and
the plurality of first layers and the plurality of second layers each have a thickness of between 10 nm and 30 nm.
12. The method of claim 9 , wherein while the second etching gas is supplied, passivation gas and Ar gas are also supplied.
13. The method of claim 12 , wherein
the first etching gas comprises Cl 2 , and
the second etching gas comprises SF 6 .
14. The method of claim 12 , wherein
the passivation gas comprises HBr.
15. The method of claim 14 , wherein the second etching gas is pulsed at a pulse duration of between 1 second and 10 seconds and a duty cycle of between 1:3 and 3:1.
16. A method for smoothing sidewalls of features etched in a material layer, comprising:
pulsing fluorine containing etching gas to a material layer in a processing chamber, the material layer comprising a plurality of first layers and a plurality of second layers alternately formed over a substrate; and
continuously supplying passivation gas and Ar gas in the processing chamber.
17. The method of claim 16 , wherein the plurality of first layers comprises molybdenum (Mo) and the plurality of second layers comprise tungsten (W).
18. The method of claim 16 , wherein
the fluorine containing etching gas comprises SF 6 , and
the passivation gas comprises HBr.
19. The method of claim 16 , wherein the fluorine containing etching gas is pulsed at a pulse duration of between 1 second and 10 seconds and a duty cycle of between 1:3 and 3:1.