Memory array with multiplexed digit lines
Methods, systems, and devices for a memory device with multiplexed digit lines are described. In some cases, a memory cell of the memory device may include a storage component and a selection component that includes two transistors. A first transistor may be coupled with a word line and a second transistor may be coupled with a select line to selectively couple the memory cell with a digit line. The selection component, in conjunction with a digit line multiplexing component, may support a sense component common to a set of digit lines. In some cases, the digit line of the set may be coupled with the sense component during a read operation, while the remaining digit lines of the set are isolated from the sense component.
1. A memory device, comprising:
a substrate; and
a memory cell comprising a storage component, a first vertical transistor, and a second vertical transistor,
the first vertical transistor comprising a first gate coupled with a word line and a first doped region extending in a first direction away from a surface of the substrate; and
the second vertical transistor comprising a second gate coupled with a select line and a second doped region extending in the first direction away from the surface of the substrate, the first vertical transistor is a first distance away from the substrate and the second vertical transistor is above the first vertical transistor a second distance away from the substrate different than the first distance, and the word line is a third distance away from the surface of the substrate and the select line is above the word line a fourth distance away from the surface of the substrate different than the third distance.
2. The memory device of claim 1 , wherein the first direction is orthogonal to the surface of the substrate.
3. The memory device of claim 1 , wherein the word line extends in a second direction parallel to a plane defined by the surface of the substrate.
4. The memory device of claim 3 , wherein the select line extends in a third direction parallel to the plane defined by the surface of the substrate, the third direction orthogonal to the second direction.
5. The memory device of claim 1 , wherein the select line is configured to couple a digit line associated with the memory cell with a sense component configured to selectively couple with a plurality of digit lines comprising the digit line during a read operation.
6. The memory device of claim 1 , wherein the storage component is a third distance away from the surface of the substrate and the third distance is greater than the first distance or the second distance.
7. The memory device of claim 1 , wherein a first node of the first vertical transistor is coupled with a digit line and a first node of the second vertical transistor is coupled with a first node of the storage component.
8. The memory device of claim 7 , wherein a second node of the first vertical transistor is coupled with a second node of the second vertical transistor.
9. The memory device of claim 1 , wherein a first node of the first vertical transistor is coupled with a first node of the storage component and a first node of the second vertical transistor is coupled with a digit line.
10. The memory device of claim 1 , wherein a first node of the first vertical transistor is coupled with a first node of the storage component and a first node of the second vertical transistor is coupled with a second node of the storage component.
11. The memory device of claim 10 , wherein a second node of the first vertical transistor is coupled with a digit line.
12. The memory device of claim 10 , wherein a second node of the second vertical transistor is coupled with a plate line.