Semiconductor device and method for manufacturing the same
A region containing a high proportion of crystal components and a region containing a high proportion of amorphous components are formed separately in one oxide semiconductor film. The region containing a high proportion of crystal components is formed so as to serve as a channel formation region and the other region is formed so as to contain a high proportion of amorphous components. It is preferable that an oxide semiconductor film in which a region containing a high proportion of crystal components and a region containing a high proportion of amorphous components are mixed in a self-aligned manner be formed. To separately form the regions which differ in crystallinity in the oxide semiconductor film, first, an oxide semiconductor film containing a high proportion of crystal components is formed and then process for performing amorphization on part of the oxide semiconductor film is conducted.
1. A light-emitting device comprising a pixel, the pixel comprising:
a transistor comprising:
a first conductive layer;
a first oxide semiconductor layer comprising a channel formation region of the transistor;
a second conductive layer in contact with the first oxide semiconductor layer; and
a third conductive layer in contact with the first oxide semiconductor layer;
a capacitor comprising:
a fourth conductive layer; and
a second oxide semiconductor layer over the fourth conductive layer;
a first insulating layer over the second oxide semiconductor layer;
a fifth conductive layer over the first insulating layer, the fifth conductive layer being electrically connected to the second oxide semiconductor layer;
a second insulating layer over the fifth conductive layer;
a third insulating layer over the second insulating layer;
a light-emitting element comprising a pixel electrode; and
a color filter layer between the second insulating layer and the third insulating layer,
wherein a width of the second oxide semiconductor layer is larger than a width of the fifth conductive layer in a cross-sectional view of the light-emitting device,
wherein the pixel electrode is electrically connected to the second conductive layer through a first opening in the third insulating layer and a second opening in the second insulating layer,
wherein the color filter layer does not overlap with the first conductive layer, the second conductive layer, and the second oxide semiconductor layer, and
wherein the pixel electrode is isolated from the fifth conductive layer.
2. The light-emitting device according to claim 1 , wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, gallium, and zinc.
3. The light-emitting device according to claim 1 ,
wherein the first oxide semiconductor layer comprises a first region and a second region,
wherein the channel formation region of the transistor is between the first region and the second region, and
wherein the first region and the second region have lower resistance than the channel formation region.
4. The light-emitting device according to claim 1 , wherein the color filter layer is in direct contact with the second insulating layer and the third insulating layer.
5. The light-emitting device according to claim 1 , wherein a concentration of chlorine in the first oxide semiconductor layer is lower than or equal to 2×10 18 atoms/cm 3 .
6. A light-emitting device comprising a pixel, the pixel comprising:
a transistor comprising:
a first conductive layer;
a first oxide semiconductor layer comprising a channel formation region of the transistor;
a second conductive layer in contact with the first oxide semiconductor layer; and
a third conductive layer in contact with the first oxide semiconductor layer;
a capacitor comprising:
a fourth conductive layer; and
a second oxide semiconductor layer over the fourth conductive layer;
a first insulating layer over the second oxide semiconductor layer;
a fifth conductive layer over the first insulating layer, the fifth conductive layer being electrically connected to the second oxide semiconductor layer through an opening in the first insulating layer;
a second insulating layer over the fifth conductive layer;
a third insulating layer over the second insulating layer;
a light-emitting element comprising a pixel electrode; and
a color filter layer between the second insulating layer and the third insulating layer,
wherein the first conductive layer extends in a first direction,
wherein the fifth conductive layer extends in a second direction intersecting the first direction,
wherein a width of the second oxide semiconductor layer is larger than a width of the fifth conductive layer in a cross-sectional view of the light-emitting device,
wherein the pixel electrode is electrically connected to the second conductive layer through a first opening in the third insulating layer and a second opening in the second insulating layer,
wherein the color filter layer does not overlap with the first conductive layer, the second conductive layer, and the second oxide semiconductor layer, and
wherein the pixel electrode is isolated from the fifth conductive layer.
7. The light-emitting device according to claim 6 , wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, gallium, and zinc.
8. The light-emitting device according to claim 6 ,
wherein the first oxide semiconductor layer comprises a first region and a second region,
wherein the channel formation region of the transistor is between the first region and the second region, and
wherein the first region and the second region have lower resistance than the channel formation region.
9. The light-emitting device according to claim 6 , wherein the color filter layer is in direct contact with the second insulating layer and the third insulating layer.
10. The light-emitting device according to claim 6 , wherein a concentration of chlorine in the first oxide semiconductor layer is lower than or equal to 2×10 18 atoms/cm 3 .