Memory device and operating method thereof
Embodiments of the present disclosure relate to a memory device and an operating method thereof. According to the embodiments of the present disclosure, when a read failure for a first read command among a plurality of read commands inputted from a memory controller occurs, the memory device may execute in an overlapping manner, a read retry operation for the first read command and a read operation for a second read command among the plurality of read commands.
1. A memory device comprising:
a memory cell array;
a read/write circuit configured to read data stored in the memory cell array; and
a control logic configured to control the read/write circuit to execute a plurality of read commands inputted from a memory controller,
wherein, when a read failure for a first read command among the plurality of read commands occurs, the memory device executes, in an overlapping manner, a read retry operation for the first read command and a read operation for a second read command among the plurality of read commands.
2. The memory device according to claim 1 , further comprising: a cache buffer capable of caching data read-requested by the plurality of read commands,
wherein the memory device simultaneously executes an operation of caching first data as data read in the read retry operation for the first read command, in the cache buffer and an operation of outputting second data as data read-requested by the second read command, to the memory controller.
3. The memory device according to claim 2 , wherein the second data is previously stored in the cache buffer, when the read retry operation for the first read command is started.
4. The memory device according to claim 2 , wherein the memory device simultaneously executes an operation of outputting the first data to the memory controller and an operation of caching third data as data read-requested by a third read command among the plurality of read commands, in the cache buffer.
5. The memory device according to claim 1 , wherein the memory device repeatedly executes the read retry operation for the first read command until the read retry operation for the first read command succeeds.
6. The memory device according to claim 5 , wherein the memory device executes the read retry operation for the first read command with a higher priority than a read command inputted after the first read command among the plurality of read commands.
7. A method for operating a memory device executing a plurality of read commands inputted from a memory controller, the method comprising:
monitoring whether a read failure for a first read command among the plurality of read commands has occurred; and
executing, when a read failure for the first read command has occurred, a read retry operation for the first read command and a read operation for a second read command among the plurality of read commands in an overlapping manner.
8. The method according to claim 7 , wherein the executing of the read retry operation for the first read command and the read operation for the second read command in the overlapping manner includes:
simultaneously executing an operation of storing first data, as data read in the read retry operation for the first read command, in a cache buffer capable of caching data read-requested by the plurality of read commands and an operation of outputting second data as data read-requested by the second read command, to the memory controller.
9. The method according to claim 8 , wherein the second data is previously stored in the cache buffer, when the read retry operation for the first read command is started.
10. The method according to claim 8 , further comprising:
simultaneously executing an operation of outputting the first data to the memory controller and an operation of storing third data as data read-requested by a third read command among the plurality of read commands, in the cache buffer.
11. The method according to claim 7 , wherein the read retry operation for the first read command is repeatedly executed until the read retry operation for the first read command succeeds.
12. The method according to claim 11 , wherein the read retry operation for the first read command is executed with a higher priority than a read command inputted after the first read command among the plurality of read commands.
13. A memory device comprising:
a memory cell array including a plurality of pages;
a cache buffer; and
a control logic configured to:
receive, from a memory controller, a plurality of read commands associated with the plurality of pages;
sequentially execute first and second read commands among the plurality of read commands to read first and second data from first and second pages among the plurality of pages and cache first and second read data in the cache buffer;
determine whether a read failure for the first read data has occurred; and
when it is determined the read failure for the first read data occurred, execute a read retry for the first page to read the first read data and cache the first read data in the cache buffer while transferring the second read data, which is cached in the cache buffer, to the memory controller.