Method for depositing molybdenum layers using an underlayer
Methods for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.
1. A method of forming a structure, the method comprising the steps of:
providing a substrate;
forming an underlayer comprising one or more of a transition metal sulfide, a transition metal carbide, and a transition metal nitride on a surface of the substrate; and
forming a molybdenum layer overlying the underlayer,
wherein the step of forming the underlayer comprises a cyclic deposition process, and
wherein the cyclic deposition process comprises:
providing a transition metal precursor to a reaction chamber; and
providing one or more of a carbon reactant, a sulfur reactant, and a nitrogen reactant to the reaction chamber.
2. The method of claim 1 , wherein the underlayer comprises the transition metal nitride.
3. The method of claim 1 , wherein the underlayer comprises a transition metal selected from a Group 4 to Group 7 transition metal.
4. The method of claim 1 , wherein a thickness of the underlayer is greater than 0 nm and less than 10 nm.
5. The method of claim 1 , wherein the step of providing the substrate comprises heating the substrate to a temperature between about 300° C. and 500° C.
6. The method of claim 1 , wherein the cyclic deposition process further comprises:
providing a reducing reactant to the reaction chamber.
7. The method of claim 6 , wherein the reducing reactant comprises one or more of hydrogen, hydrogen radicals, hydrogen ions, silane with a formula Si n H (2n+2) , germane with a formula Ge n H n+2 , and borane with a formula B n H n+4 or B n H n+6 .
8. The method of claim 1 , wherein the transition metal precursor comprises one or more of a transition metal halide, a transition metal chalcogenide halide, a transition metal carbonyl, a transition metalorganic precursor, and a transition metal organometallic precursor.
9. The method of claim 1 , wherein the carbon reactant comprises one or more of acetylene, ethylene, alkyl halide compounds, alkene halide compounds, and metal alkyl compounds.
10. The method of claim 1 , wherein the nitrogen reactant comprises one or more of nitrogen (N 2 ), ammonia (NH 3 ), hydrazine (N 2 H 4 ) or a hydrazine derivate, a mixture of hydrogen and nitrogen, nitrogen ions, nitrogen radicals, and excited nitrogen species.
11. The method of claim 1 , wherein the sulfur reactant comprises one or more of hydrogen sulfide (H 2 S), sulfur, thiols, compounds including disulfide bonds, compounds including a sulfur-alkyl group bond, and compounds represented by the formula R—S—S—R′ or S—R, wherein R and R′ are independently selected from aliphatic and aromatic groups, and sulfur halides.
12. The method of claim 1 , wherein the step of forming the molybdenum layer comprises a cyclic deposition process.
13. The method of claim 12 , wherein the cyclic deposition process comprises:
providing a molybdenum precursor to a reaction chamber; and
providing a reducing reactant to the reaction chamber.
14. The method of claim 13 , wherein the molybdenum precursor comprises one or more of a molybdenum halide, a molybdenum chalcogenide halide, a molybdenum carbonyl, a molybdenum metalorganic precursor, and a molybdenum organometallic precursor.
15. The method of claim 13 , wherein the molybdenum precursor comprises at least one halide ligand.
16. The method of claim 13 , wherein the molybdenum precursor comprises one or more of molybdenum trichloride (MoCl 3 ), molybdenum tetrachloride (MoCl 4 ), molybdenum pentachloride (MoCl 5 ), molybdenum hexachloride (MoCl 6 ), molybdenum hexafluoride (MoF 6 ), molybdenum hexacarbonyl (Mo(CO) 6 ), tetrachloro(cyclopentadienyl)molybdenum, molybdenum (V) trichloride oxide (MoOCl 3 ), molybdenum (VI) tetrachloride oxide (MoOCl 4 ), and molybdenum (IV) dichloride dioxide (MoO 2 Cl 2 ), Mo(tBuN) 2 (NMe 2 ) 2 , Mo(NBu) 2 (StBu) 2 , (Me 2 N) 4 Mo, (iPrCp) 2 MoH 2 , Mo(NMe 2 ) 4 , Mo(NEt 2 ) 4 , Mo 2 (NMe 2 ) 6 , Mo(tBuN) 2 (NMe 2 ) 2 , Mo(NtBu) 2 (StBu) 2 , Mo(NtBu) 2 (iPr 2 AMD) 2 , Mo(thd) 3 , MoO 2 (acac) 2 , MoO 2 (thd) 2 , MoO 2 (iPr 2 AMD) 2 , Mo(Cp) 2 H 2 , Mo(iPrCp) 2 H 2 , Mo(η 6 -ethylbenzene) 2 , MoCp(CO) 2 (η3-allyl), and MoCp(CO) 2 (NO).
17. The method of claim 13 , wherein a deposition temperature during the step of forming the molybdenum layer is less than 650° C.
18. The method of claim 1 , wherein the underlayer is used to manipulate stress within the molybdenum layer.