Semiconductor device
An integrated circuit device includes a substrate having source and drain recesses therein that are lined with respective silicon-germanium liners and filled with doped semiconductor source and drain regions. A stacked plurality of semiconductor channel layers are provided, which are separated vertically from each other within the substrate by corresponding buried insulated gate electrode regions that extend laterally between the silicon-germanium liners. An insulated gate electrode is provided on an uppermost one of the plurality of semiconductor channel layers. The silicon-germanium liners may be doped with carbon.
1. A semiconductor device, comprising:
an active pattern which includes a lower pattern, and a plurality of sheet patterns spaced apart from the lower pattern in a first direction;
a gate structure which is placed on the lower pattern, and includes a gate electrode which surrounds the plurality of sheet patterns; and
a source/drain pattern located on both sides of the gate structure;
wherein the source/drain pattern includes a silicon-germanium liner being in contact with each of the sheet patterns and the lower pattern, and a filling semiconductor pattern placed on the silicon-germanium liner;
wherein the filling semiconductor pattern includes silicon doped with an n-type first impurity;
wherein the source/drain pattern further includes an insertion liner pattern, which extends between the silicon-germanium liner and the filling semiconductor pattern and extends along a profile of the silicon-germanium liner; and
wherein the insertion liner pattern includes silicon doped with an n-type second impurity different from the first impurity.
2. The semiconductor device of claim 1 , wherein the silicon-germanium liner includes doped carbon.
3. The semiconductor device of claim 1 , wherein the gate structure includes a gate insulating film placed between the gate electrode and each of the sheet patterns, and
the gate insulating film is in contact with the silicon-germanium liner.
4. The semiconductor device of claim 3 , wherein the silicon-germanium liner includes side wall portions extending along the gate electrode and each of the sheet patterns in the first direction, and
as it goes away from the lower pattern, a thickness of the side wall portions of the silicon-germanium liner decreases.
5. The semiconductor device of claim 3 , wherein the silicon-germanium liner includes side wall portions extending along the gate electrode and each of the sheet patterns in the first direction,
the side wall portions of the silicon-germanium liner include at least one or more width extension regions, and
as it goes away from the lower pattern, a thickness of each width expansion region increases and then decreases.
6. The semiconductor device of claim 5 , wherein the width extension region is placed at a position where the width extension region overlaps the gate electrode in a second direction different from the first direction.
7. The semiconductor device of claim 3 , wherein the silicon-germanium liner includes side wall portions extending along the gate electrode and each of the sheet patterns in the first direction, and
as it goes away from the lower pattern, the thickness of the side wall portions of the silicon-germanium liner is constant.
8. The semiconductor device of claim 1 , wherein the insertion liner pattern includes doped carbon.
9. The semiconductor device of claim 1 , wherein the insertion liner pattern is formed conformally along the profile of the silicon-germanium liner.
10. The semiconductor device of claim 1 , wherein the silicon-germanium liner defines a liner recess extending in the first direction; and wherein a thickness of the insertion liner pattern on a bottom face of the liner recess is greater than a thickness of the insertion liner pattern on a side wall of the liner recess.
11. A semiconductor device, comprising:
a multi-channel active pattern;
a gate structure which intersects the multi-channel active pattern and includes a gate electrode, on the multi-channel active pattern;
a source/drain pattern placed on both sides of the gate structure, on the multi-channel active pattern;
wherein the source/drain pattern includes a silicon-germanium liner which defines a liner recess and is in contact with the multi-channel active pattern, and a filling semiconductor pattern which fills the liner recess on the silicon-germanium liner;
wherein the silicon-germanium liner includes doped carbon;
wherein the filling semiconductor pattern includes silicon doped with an n-type first impurity;
wherein the source/drain pattern further includes an insertion liner pattern, which extends between the silicon-germanium liner and the filling semiconductor pattern, and extends along a profile of the liner recess; and
wherein the insertion liner pattern includes silicon doped with an n-type second impurity different from the first impurity.
12. The semiconductor device of claim 11 , wherein the insertion liner pattern includes doped carbon.
13. The semiconductor device of claim 11 , wherein the multi-channel activity pattern includes a lower pattern, and a plurality of sheet patterns spaced apart from the lower pattern, and
the gate electrode is placed on the lower pattern and surrounds each of the sheet patterns.
14. The semiconductor device of claim 13 , wherein the gate structure includes a gate insulating film placed between the gate electrode and each of the sheet patterns, and
the gate insulating film is in contact with the silicon-germanium liner.
15. A semiconductor device, comprising:
an active pattern which includes a lower pattern, and a plurality of sheet patterns spaced apart from the lower pattern in a first direction;
a gate structure which is placed on the lower pattern, and includes a gate insulating film surrounding the plurality of sheet patterns, and a gate electrode on the gate insulating film; and
a source/drain pattern placed on both sides of the gate structure,
wherein the source/drain pattern includes a silicon-germanium liner being in contact with each of the sheet patterns and the gate insulating film, a filling semiconductor pattern on the silicon-germanium liner, and an insertion liner pattern between the silicon-germanium liner and the filling semiconductor pattern,
the silicon-germanium liner includes doped carbon,
the insertion liner pattern includes silicone doped with carbon, and
the filling semiconductor pattern includes silicon doped with an n-type first impurity.
16. The semiconductor device of claim 15 , wherein the silicon-germanium liner includes side wall portions extending along the gate electrode and each of the sheet patterns in the first direction,
the side wall portions of the silicon-germanium liner include at least one or more width extension regions, and
as it goes away from the lower pattern, a thickness of each width expansion region increases and then decreases.
17. The semiconductor device of claim 16 , wherein the width extension region is placed at a position where the width extension region overlaps the gate electrode in a second direction different from the first direction.
18. The semiconductor device of claim 15 , wherein the insertion liner pattern includes an n-type second impurity different from the first impurity.