Chip and memory
Provided are a chip and a memory, relating to the technical field of semiconductors, and intended to solve the technical problem of low qualification rate of chips. The chip includes a base in which a through hole penetrating through the base is provided. A conductive column is provided in the through hole. A first surface of the base is provided with a first annular groove which surrounds the conductive column. A first isolator is provided in the first annular groove, and a first air gap extending along a circumferential direction of the first annular groove is formed in the first isolator.
1. A chip, comprising:
a base, wherein a through hole penetrating through the base is provided in the base, and a conductive column is provided in the through hole;
a first surface of the base is provided with a first annular groove which surrounds the conductive column; and
a first isolator is provided in the first annular groove, and a first air gap extending along a circumferential direction of the first annular groove is formed in the first isolator, wherein
the first air gap surrounds the conductive column for one circle; and, wherein
the first surface of the base is further provided with a second annular groove and a third annular groove;
the second annular groove is sleeved outside the first annular groove, and a second isolator is filled in the second annular groove;
the third annular groove is sleeved outside the second annular groove, and a third isolator is filled in the third annular groove; and
a width of the first annular groove is greater than width of the second annular groove and width of the third annular groove along a radial direction of the through hole, and the second annular groove and the third annular groove are consistent in width.
2. The chip of claim 1 , wherein
when taking a plane perpendicular to a center line of the through hole as a cross section, the cross section of the first annular groove is in the shape of a regular polygon with eight or more sides.
3. The chip of claim 2 , wherein
the regular polygon has an inscribed circle diameter of 5 μm to 40 μm.
4. The chip of claim 1 , wherein
the first annular groove has a depth of 0.2 μm to 2 μm in a direction of a center line of the through hole.
5. The chip of claim 1 , wherein
a center line of the first annular groove coincides with a center line of the through hole.
6. The chip of claim 1 , wherein
when taking a plane perpendicular to the first surface of the base and comprising a center line of the through hole as a cross section, the cross section of the first air gap is in the shape of a triangle, a rectangle, a circle, or an ellipse.
7. The chip of claim 1 , wherein
a second air gap extending along a circumferential direction of the second annular groove is formed in the second isolator; and/or
a third air gap extending along a circumferential direction of the third annular groove is formed in the third isolator.
8. A memory, comprising:
at least two stacked chips, wherein conductive columns in adjacent chips abut with each other, each chip comprises: a base, wherein a through hole penetrating through the base is provided in the base, and a conductive column is provided in the through hole;
a first surface of the base is provided with a first annular groove which surrounds the conductive column; and
a first isolator is provided in the first annular groove, and a first air gap extending along a circumferential direction of the first annular groove is formed in the first isolator, wherein
the first air gap surrounds the conductive column for one circle; and, wherein
the first surface of the base is further provided with a second annular groove and a third annular groove;
the second annular groove is sleeved outside the first annular groove, and a second isolator is filled in the second annular groove;
the third annular groove is sleeved outside the second annular groove, and a third isolator is filled in the third annular groove; and
a width of the first annular groove is greater than width of the second annular groove and width of the third annular groove along a radial direction of the through hole, and the second annular groove and the third annular groove are consistent in width.
9. The memory of claim 8 , wherein
when taking a plane perpendicular to a center line of the through hole as a cross section, the cross section of the first annular groove is in the shape of a regular polygon with eight or more sides.
10. The memory of claim 9 , wherein
the regular polygon has an inscribed circle diameter of 5 μm to 40 μm.
11. The memory of claim 8 , wherein
the first annular groove has a depth of 0.2 μm to 2 μm in a direction of a center line of the through hole.
12. The memory of claim 8 , wherein
a center line of the first annular groove coincides with a center line of the through hole.
13. The memory of claim 8 , wherein
when taking a plane perpendicular to the first surface of the base and comprising a center line of the through hole as a cross section, the cross section of the first air gap is in the shape of a triangle, a rectangle, a circle, or an ellipse.
14. The memory of claim 8 , wherein
a second air gap extending along a circumferential direction of the second annular groove is formed in the second isolator; and/or
a third air gap extending along a circumferential direction of the third annular groove is formed in the third isolator.