Display device and method of manufacturing light-emitting element
A display device, a light-emitting element, and a method of manufacturing a light-emitting element are provided. A display device includes: a first electrode and a second electrode spaced apart from each other; and light-emitting elements between the first electrode and the second electrode, and each of the light-emitting elements includes a first area having a first diameter, a second area having a second diameter greater than the first diameter, a first insulating film surrounding the first area, and a second insulating film on the first insulating film, and the second insulating film surrounds the second area exposed by the first insulating film.
1. A method of manufacturing a light-emitting element, the method comprising:
forming a light-emitting stack on a stack substrate, the light-emitting stack comprising a lower portion and an upper portion disposed on the lower portion;
primary etching the upper portion of the light-emitting stack to form first areas of light-emitting patterns;
surface treating the first areas of the light-emitting patterns so that a first diameter of a first area of the first areas of the light-emitting patterns is constant along a height direction away from the stack substrate;
forming a first insulating film surrounding the first areas of the light-emitting patterns;
secondary etching the lower portion of the light-emitting stack to form second areas of the light-emitting patterns, adjacent light-emitting patterns of the light-emitting patterns being spaced apart along an upper surface of the stack substrate, wherein a second diameter of a second area of the second areas of the light-emitting patterns decreases along the height direction and a minimum value of the second diameter is greater than the first diameter; and
forming a second insulating film surrounding the first area and the second area,
wherein the upper surface of the stack substrate is completely covered by the lower portion of the light-emitting stack between the adjacent light-emitting patterns during the primary etching.
2. The method of claim 1 , wherein the light-emitting stack comprises:
a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; and
an active layer between the first semiconductor layer and the second semiconductor layer.
3. The method of claim 2 , wherein, in the forming of the first area, the first semiconductor layer and the active layer are etched.
4. The method of claim 3 , wherein the first insulating film is formed directly on the first semiconductor layer and the active layer.