Conductive oxide overhang structures for OLED devices
Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in an organic light-emitting diode (OLED) display are described herein. The overhang structures are permanent to the sub-pixel circuit. The overhang structures include a conductive oxide. A first configuration of the overhang structures includes a base portion and a top portion with the top portion disposed on the base portion. In a first sub-configuration, the base portion includes the conductive oxide of at least one of a TCO material or a TMO material. In a second sub-configuration, the base portion includes a metal alloy material and the conductive oxide of a metal oxide surface. A second configuration of the overhang structures includes the base portion and the top portion with a body portion disposed between the base portion and the top portion. The body portion includes the metal alloy body and the metal oxide surface.
1 . A device, comprising:
a substrate;
overhang structures disposed over the substrate, the overhang structures defining sub-pixels of the device, the overhang structures including a second portion disposed over and directly contacting a first portion, at least one of the second portion or the first portion includes a conductive oxide, the first portion comprising at least one of:
a transparent conductive oxide (TCO) material;
a transition metal oxide (TMO) material; or
a metal alloy body including a metal alloy material and a metal oxide surface including one or more oxides of the metal alloy material, and the second portion disposed over the first portion, the second portion comprising a metal material; and
a plurality of sub-pixels, each sub-pixel comprising:
an anode;
an organic light-emitting diode (OLED) material disposed over and in contact with the anode;
a cathode disposed over the OLED material, wherein a cathode material of the cathode is different from an overhang material of the second portion and the second portion of the overhang structures extends over a portion of the OLED material and the cathode; and
an encapsulation layer disposed over the cathode and past an endpoint of the cathode, wherein the encapsulation layer directly contacts a sidewall of the first portion.
2 . The device of claim 1 , wherein each sub-pixel further comprises a plug disposed over the encapsulation layer, the plug having a plug transmittance that is matched or substantially matched to an OLED transmittance of the OLED material.
3 . The device of claim 1 , further comprising a global encapsulation layer disposed over the conductive oxide overhang structures and the encapsulation layer.
4 . The device of claim 1 , wherein the device comprises a dot-type architecture or a line-type architecture.
5 . The device of claim 1 , wherein the substrate is a pre-patterned indium tin oxide (ITO) glass substrate.
6 . The device of claim 1 further comprising:
adjacent pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device.
7 . The device of claim 6 , wherein the overhang structures are disposed over an upper surface of the PDL structures.
8 . A device, comprising:
a substrate;
overhang structures disposed over the substrate, the overhang structures defining sub-pixels of the device, the overhang structures including a second portion disposed over and directly contacting a first portion, the first portion disposed on PDL structures, at least one of the second portion or the first portion includes a conductive oxide, the first portion comprising at least one of:
a transparent conductive oxide (TCO) material;
a transition metal oxide (TMO) material; or
a metal alloy body including a metal alloy material and a metal oxide surface including one or more oxides of the metal alloy material, and the second portion disposed over the first portion, the second portion comprising a metal material; and
a plurality of sub-pixels, each sub-pixel comprising:
an anode;
an organic light-emitting diode (OLED) material disposed over and in contact with the anode;
a cathode disposed over the OLED material, wherein a cathode material of the cathode is different from an overhang material of the second portion and the second portion of the overhang structures extends over a portion of the OLED material and the cathode; and
an encapsulation layer disposed over the cathode and past an endpoint of the cathode, wherein the encapsulation layer directly contacts a sidewall of the first portion.
9 . The device of claim 8 , wherein adjacent overhangs of the conductive oxide overhang structures are defined by:
an overhang width from a sidewall of the first portion to an underside of the second portion; and
an overhang depth from a PDL structure to the underside of the second portion.
10 . The device of claim 8 , wherein:
the TCO material comprises one or more of indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin oxide (ITO), or combinations thereof;
the TMO material includes comprises an oxide of a transition metal; and
the metal material comprises Ti, Cu, Mo, ITO, IZO, or combinations thereof.
11 . The device of claim 8 , wherein the cathode contacts at least a portion of the first portion.
12 . A device, comprising:
a substrate;
overhang structures disposed over the substrate, the overhang structures defining sub-pixels of the device, the overhang structures including a second portion disposed over and directly contacting a first portion, the first portion disposed on PDL structures, at least one of the second portion or the first portion includes a conductive oxide, the first portion comprising at least one of:
a transparent conductive oxide (TCO) material;
a transition metal oxide (TMO) material; or
a metal alloy body including a metal alloy material and a metal oxide surface including one or more oxides of the metal alloy material, and the second portion disposed over the first portion, the second portion comprising a metal material; and
a plurality of sub-pixels, each sub-pixel comprising:
an anode;
an organic light-emitting diode (OLED) material disposed over and in contact with the anode; and
a cathode disposed over the OLED material, wherein a cathode material of the cathode is different from an overhang material of the second portion and the second portion of the overhang structures extends over a portion of the OLED material and the cathode, wherein adjacent overhangs of the conductive oxide overhang structures are defined by an overhang width from a sidewall of the first portion to an underside of the second portion and an overhang depth from a PDL structure to the underside of the second portion, wherein the overhang width of each of the conductive oxide overhang structures are about 0.5 μm (micrometers) to about 1 μm and are within 15 percent of each other.
13 . A device comprising a plurality of sub-pixels, each sub-pixel of the plurality of sub-pixels defined by adjacent overhang structures, each sub-pixel having an anode, organic light-emitting diode (OLED) material disposed on the anode, and a cathode disposed over the OLED material, the overhang structures including a second portion directly contacting a first portion, at least one of the second portion or the first portion includes a conductive oxide, the first portion comprising at least one of:
a transparent conductive oxide (TCO) material;
a transition metal oxide (TMO) material; or
a metal alloy body including a metal alloy material and a metal oxide surface including one or more oxides of the metal alloy material, and the second portion disposed over the first portion, the second portion comprising a metal material, wherein the device is made by a process comprising:
depositing the OLED material using evaporation deposition over a substrate, the OLED material disposed over and in contact with the anode, the OLED material having an OLED edge defined by defined by adjacent overhangs of the conductive oxide overhang structures;
depositing the cathode using evaporation deposition, wherein a cathode material of the cathode is different from an overhang material of the second portion and the overhang structures extend over a portion of the OLED material and the cathode, the overhang structures including the conductive oxide; and
depositing an encapsulation layer over the cathode and past an endpoint of the cathode, wherein the encapsulation layer directly contacts a sidewall of the first portion.
14 . The device of claim 13 , wherein each of the overhang structures comprise:
the first portion disposed on the PDL structures.
15 . The device of claim 13 , further comprising pixel-defining layer (PDL) structures wherein the overhang structures are disposed over the PDL structures.
16 . A device, comprising:
a substrate;
overhang structures defining sub-pixels of the device, the overhang structures including a second portion directly contacting a first portion, at least one of the second portion or the first portion includes a conductive oxide, the first portion comprising at least one of:
a transparent conductive oxide (TCO) material;
a transition metal oxide (TMO) material; or
a metal alloy body including a metal alloy material and a metal oxide surface including one or more oxides of the metal alloy material, and the second portion disposed over the first portion, the second portion comprising a metal material, wherein a bottom surface of the second portion is planar to a top surface of the first portion; and
a plurality of sub-pixels, each sub-pixel comprising:
an anode;
an organic light-emitting diode (OLED) material disposed over and in contact with the anode; and
a cathode disposed over the OLED material, wherein the second portion of the overhang structures extends over a portion of the OLED material and the cathode.
17 . The device of claim 16 , wherein the metal material comprises Ti, Cu, Mo, ITO, IZO, or combinations thereof.
18 . A device, comprising:
a substrate;
overhang structures disposed over the substrate, the overhang structures defining sub-pixels of the device, the overhang structures including a second portion disposed over and directly contacting a first portion, at least one of the second portion or the first portion includes a conductive oxide; and
a plurality of sub-pixels, each sub-pixel comprising:
an anode;
an organic light-emitting diode (OLED) material disposed over and in contact with the anode;
a cathode disposed over the OLED material, wherein a cathode material of the cathode is different from an overhang material of the second portion and the second portion of the overhang structures extends over a portion of the OLED material and the cathode;
a first encapsulation layer disposed over the cathode and past an endpoint of the cathode, wherein the first encapsulation layer extends under at least a portion of the overhang structures along a sidewall of the second portion and contacts a bottom surface of the second portion of the overhang structures, wherein the first encapsulation layer directly contacts a sidewall of the first portion; and
a second encapsulation layer disposed over the first encapsulation layer, wherein the second encapsulation layer is disposed within a well of each sub-pixel and directly contacting the second portion of the overhang structures.