Semiconductor device and method of manufacture
A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.
1. A method of manufacturing an integrated circuit device, the method comprising:
forming a first mandrel and a second mandrel over a substrate;
depositing a spacer material over both the first mandrel and the second mandrel and also between the first mandrel and the second mandrel;
depositing a bottom anti-reflective layer over the spacer material, a portion of the spacer material being exposed after the depositing the bottom anti-reflective layer;
applying an etchant to the spacer material through the bottom anti-reflective layer, the etchant etching the spacer material at a rate of no greater than about 4.2 Å/min; and
depositing a dielectric material in physical contact with a remaining portion of the spacer material.
2. The method of claim 1 , wherein the etchant comprises an inhibitor at a concentration of 10 wt %.
3. The method of claim 1 , wherein the spacer material comprises titanium oxide.
4. The method of claim 1 , wherein the etchant comprises an inhibitor at a concentration of 40 wt %.
5. The method of claim 4 , wherein the etchant etches the spacer material at a rate of no greater than about 0.39 Å/min.
6. The method of claim 1 , wherein the depositing the dielectric material utilizes a silane precursor and an oxidizing precursor.
7. The method of claim 1 , wherein the etchant comprises N-(2-hydroxyethyl)-1,2,3,6-tetrahydrophthalimide.
8. A method of manufacturing an integrated circuit device, the method comprising:
depositing a spacer material over a substrate and between a first mandrel and a second mandrel;
depositing a photoresist over the spacer material;
forming an opening through the photoresist to expose the spacer material, the opening having a first aspect ratio;
etching the spacer material at a rate of no greater than about 4.2 Å/min, wherein after the etching the spacer material the opening has a second aspect ratio less than the first aspect ratio; and
depositing a dielectric material into the opening after the etching the spacer material.
9. The method of claim 8 , further comprising etching the spacer material after the depositing the dielectric material to form a spacer.
10. The method of claim 9 , further comprising using the spacer as a mask in an etching process.
11. The method of claim 8 , wherein no more than about 16.81 Å of the spacer material is removed during the etching the spacer material.
12. The method of claim 8 , wherein the etching the spacer material is performed at a rate of no greater than about 2.29 Å/min.
13. The method of claim 11 , wherein no more than about 9.13 Å of the spacer material is removed during the etching the spacer material.
14. The method of claim 8 , wherein the etching the spacer material is performed using a first etchant, the first etchant comprising 1-(2-hydroxyethyl)pyrrolidine-2,5-dione.
15. A method of manufacturing a semiconductor device, the method comprising:
depositing a hard mask over a layer to be patterned;
forming a first mandrel and a second mandrel over the hard mask, the first mandrel being separated from the second mandrel by a first region;
partially filling the first region with a spacer material, wherein after the partially filling the first region a first opening extends into the first region;
placing an anti-reflective layer over the spacer material;
placing a middle layer over the anti-reflective layer;
patterning the anti-reflective layer to form a second opening over the first opening;
etching the middle layer to reduce a thickness of the middle layer; and
filling the first opening and at least part of the second opening with a dielectric material.
16. The method of claim 15 , further comprising:
forming a third mandrel over the hard mask, wherein the partially filling the first region with the spacer material deposits a first portion of the spacer material adjacent to the third mandrel; and
etching a portion of the spacer material to form a spacer adjacent to the third mandrel.
17. The method of claim 16 , further comprising removing the third mandrel.
18. The method of claim 17 , further comprising etching the layer to be patterned using the spacer and the dielectric material as masks.
19. The method of claim 15 , wherein the etching the middle layer is performed using a first etchant, the first etchant comprising 1-(2-hydroxyethyl)pyrrolidine-2,5-dione.
20. The method of claim 15 , wherein the etching the middle layer is performed using a first etchant, the first etchant comprising N-(2-hydroxyethyl)-1,2,3,6-tetrahydrophthalimide.