Antenna package for signal transmission
This application relates to a device for signal transmission (e.g., radio frequency transmission) and a method for forming the device. For example, the method includes: depositing an insulating layer that includes polybenzobisoxazole (PBO) on a carrier; forming a backside layer including polyimide (PI) over the adhesive layer; forming a die-attach film (DAF) over the backside layer; forming one or more through-insulator via (TIV)-wall structures and one or more TIV-grating structures on the second backside layer; placing a die, such as a radio frequency (RF) integrated circuit (IC) die, on the DAF; encapsulating the die, the one or more TIV-wall structures, and the one or more TIV-grating structures, with a molding compound to form an antenna package including one or more antenna regions; and forming a redistribution layer (RDL) structure on the encapsulated package. The RDL structure can include one or more antenna structures coupled to the die. Each of the one or more antenna structures can be positioned over the one or more antenna regions.
1. A method, comprising:
forming a through interposer via wall (TIV-wall) structure on a dielectric layer;
forming a TIV-grating structure on the dielectric layer, wherein a bottom surface of the TIV-grating structure is in contact with a top surface of the dielectric layer;
forming an interconnect structure on the TIV-wall structure and the TIV-grating structure; and
enclosing a space by the TIV-wall structure, the TIV-grating structure, the interconnect structure, and the dielectric layer to form an antenna region.
2. The method of claim 1 , further comprising:
forming a die-attach film (DAF) over the dielectric layer; and
attaching a die to the DAF.
3. The method of claim 1 , wherein enclosing the space comprises encapsulating the TIV-wall structure and the TIV-grating structure with a molding compound to form an encapsulated package comprising the antenna region.
4. The method of claim 1 , further comprising:
forming a first redistribution layer (RDL) on the interconnect structure;
forming a second RDL on the first RDL;
attaching solder bumps to the second RDL; and
attaching a printed circuit board (PCB) to the solder bumps.
5. The method of claim 1 , wherein forming the TIV-wall structure and the TIV-grating structure on the dielectric layer comprises:
forming a photoresist layer on the dielectric layer;
etching the photoresist layer to form a TIV-wall opening and a TIV-grating opening;
depositing a titanium and copper seed layer stack in the TIV-wall and TIV-grating openings;
electroplating a copper layer on the titanium and copper seed layer stack; and
removing the photoresist layer.
6. The method of claim 1 , further comprising:
forming a light to heat conversion (LTHC) layer on a glass carrier substrate;
forming a protective layer between the LTHC layer and the dielectric layer; and
decomposing the LTHC layer by irradiation to separate the glass carrier substrate from the protective layer.
7. A structure, comprising:
a through interposer via wall (TIV-wall) on a dielectric layer;
a TIV-grating on the dielectric layer, wherein a bottom surface of the TIV-grating is in contact with a top surface of the dielectric layer;
an interconnect layer on the TIV-wall and the TIV-grating; and
an antenna region comprising a space enclosed by the TIV-wall, the TIV-grating, the interconnect layer, and the dielectric layer.
8. The structure of claim 7 , further comprising an additional TIV-grating, wherein an alignment direction of the TIV-grating and the additional TIV-grating is substantially parallel to the TIV-wall.
9. The structure of claim 7 , further comprising:
a die attached to the dielectric layer by a die-attach film (DAF); and
a molding compound disposed between the die and the antenna region.
10. The structure of claim 9 , wherein the molding compound has a dielectric constant between about 2.8 and about 3.0.
11. The structure of claim 7 , further comprising:
a redistribution layer (RDL) disposed on the interconnect layer; and
solder bumps disposed on the RDL.
12. The structure of claim 7 , wherein the TIV-wall has a height between about 120 μm and about 150 μm.
13. The structure of claim 7 , wherein the antenna region has a height between about 200 μm and about 2 mm.
14. The structure of claim 7 , further comprising a protective layer, wherein the protective layer and the dielectric layer comprise a polyimide (PI), a polybenzoxazole (PBO), a benzocyclobutene (BCB), an ajinomoto buildup film (ABF), a solder resist film (SR), or combinations thereof.
15. The structure of claim 7 , further comprising an additional antenna region comprising an additional space enclosed by an additional TIV-wall, an additional TIV-grating, the interconnect layer, and the dielectric layer.
16. A system, comprising:
a through interposer via wall (TIV-wall) on a dielectric layer and electrically coupled to an electric potential;
a TIV-grating on the dielectric layer and electrically coupled to ground, wherein a bottom surface of the TIV-grating is in contact with a top surface of the dielectric layer;
an interconnect layer on the TIV-wall and the TIV-grating; and
an antenna region enclosed by the TIV-wall, the TIV-grating, the interconnect layer, and the dielectric layer.
17. The system of claim 16 , further comprising a radio frequency (RF) die attached to the dielectric layer by a die-attach film (DAF) and electrically coupled to the electric potential.
18. The system of claim 16 , wherein the antenna region comprises a molding compound with a dielectric constant between about 2.8 and about 3.0.
19. The system of claim 16 , further comprising an additional antenna region enclosed by an additional TIV-wall, an additional TIV-grating, the interconnect layer, and the dielectric layer.
20. The system of claim 16 , further comprising an additional TIV-grating, wherein an alignment direction of the TIV-grating and the additional TIV-grating is substantially parallel to the TIV-wall.