Composite BSI structure and method of manufacturing the same
Various embodiments of the present application are directed towards image sensors including composite backside illuminated (CBSI) structures to enhance performance. In some embodiments, a first trench isolation structure extends into a backside of a substrate to a first depth and comprises a pair of first trench isolation segments. A photodetector is in the substrate, between and bordering the first trench isolation segments. A second trench isolation structure is between the first trench isolation segments and extends into the backside of the substrate to a second depth less than the first depth. The second trench isolation structure comprises a pair of second trench isolation segments. An absorption enhancement structure overlies the photodetector, between the second trench isolation segments, and is recessed into the backside of the semiconductor substrate. The absorption enhancement structure and the second trench isolation structure collectively define a CBSI structure.
1. An image sensor comprising:
a substrate;
a pixel sensor comprising a photodetector in the substrate;
a first trench isolation structure comprising a pair of first trench isolation segments, wherein the first trench isolation segments are respectively on opposite sides of the pixel sensor at a boundary of the pixel sensor and extend into a backside of the substrate to a first depth;
a second trench isolation structure extending into the backside of the substrate to a second depth less than the first depth between the first trench isolation segments; and
an absorption enhancement structure overlying the photodetector between the first trench isolation segments, wherein the absorption enhancement structure is recessed into the backside of the substrate and has a sidewall directly contacting the second trench isolation structure.
2. The image sensor according to claim 1 , wherein the sidewall of the absorption enhancement structure is slanted and directly contacts a sidewall of the second trench isolation structure at a third depth in the backside of the substrate that is less than the second depth.
3. The image sensor according to claim 1 , wherein the second trench isolation structure has a pair of second trench isolation segments extending into the backside of the substrate to the second depth and laterally between the first trench isolation segments.
4. The image sensor according to claim 3 , wherein the absorption enhancement structure has a surface extending from one of the second trench isolation segments to another one of the second trench isolation segments, and wherein the surface has a planar profile.
5. The image sensor according to claim 1 , wherein the absorption enhancement structure has a saw-toothed profile with multiple teeth culminating at points in the backside of the substrate, and wherein the points are at a third depth less than the second depth in the backside.
6. The image sensor according to claim 1 , wherein the second trench isolation structure has only one segment extending to the second depth between the first trench isolation segments when viewed in cross-section.
7. The image sensor according to claim 1 , wherein the second trench isolation structure is at a width-wise center of the photodetector.
8. An image sensor comprising:
a substrate;
a first trench isolation structure comprising a pair of first trench isolation segments that extend into a backside of the substrate to a first depth;
a photodetector in the substrate, between the first trench isolation segments;
a second trench isolation structure comprising a pair of second trench isolation segments that extend into the backside of the substrate to a second depth less than the first depth between the first trench isolation segments; and
an absorption enhancement structure overlying the photodetector and extending into the backside of the substrate between the second trench isolation segments;
wherein the substrate extends continuously and linearly from one of the first trench isolation segments to another one of the first trench isolation segments at a third depth in the backside of the substrate that is between and offset from the first and second depths.
9. The image sensor according to claim 8 , wherein the absorption enhancement structure extends into the backside of the substrate to a fourth depth less than the second depth between the second trench isolation segments.
10. The image sensor according to claim 9 , wherein the substrate extends continuously and linearly from one of the second trench isolation segments to another one of the second trench isolation segments at a fifth depth in the backside of the substrate that is between and offset from the second and fourth depths.
11. The image sensor according to claim 8 , further comprising:
a color filter overlying the photodetector on the backside of the substrate and having a pair of sidewalls respectively on opposite sides of the color filter, wherein the first trench isolation segments respectively underlie the sidewalls of the color filter.
12. The image sensor according to claim 8 , further comprising:
a micro lens overlying the photodetector on the backside of the substrate and having a pair of bottom corners respectively on opposite sides of the micro lens, wherein the first trench isolation segments respectively underlie the bottom corners.
13. The image sensor according to claim 8 , wherein the substrate extends continuously and linearly from the one of the first trench isolation segments to the another one of the first trench isolation segments in a direction parallel with a top surface of the substrate.
14. The image sensor according to claim 8 , wherein the absorption enhancement structure is spaced from the second trench isolation segments.
15. An image sensor comprising:
a substrate;
a first trench isolation structure comprising a pair of first trench isolation segments extending into a backside of the substrate;
a photodetector in the substrate, between the first trench isolation segments;
a second trench isolation structure extending into the backside of the substrate to a lesser depth than the first trench isolation segments and between the first trench isolation segments in a cross-sectional plane; and
an absorption enhancement structure extending into the backside of the substrate to a lesser depth than the second trench isolation structure;
wherein the photodetector is an only photodetector between the first trench isolation segments in the cross-sectional plane, and wherein the photodetector is continuous.
16. The image sensor according to claim 15 , wherein the second trench isolation structure comprises a pair of second trench isolation segments, and wherein the absorption enhancement structure is between the second trench isolation segments.
17. The image sensor according to claim 16 , wherein the absorption enhancement structure culminates in a point between the second trench isolation segments.
18. The image sensor according to claim 15 , wherein the absorption enhancement structure has a pair of slanted sidewalls respectively on opposite sides of the photodetector, and wherein the second trench isolation structure is between and contacts the slanted sidewalls.
19. The image sensor according to claim 15 , further comprising:
a metal grid comprising a pair of metal segments respectively and directly over the first trench isolation segments on the backside of the substrate; and
dielectric material extending continuously and linearly from one of the metal segments to another one of the metal segments at an elevation offset from a bottom surface of the metal grid.
20. The image sensor according to claim 15 , further comprising:
a color filter overlying the photodetector on the backside of the substrate and having a pair of sidewalls respectively on opposite sides of the photodetector, wherein the second trench isolation structure is laterally between the sidewalls.