IPD modules with flexible connection scheme in packaging
A package includes a first package and a second package over and bonded to the first package. The first package includes a first device die, and a first encapsulant encapsulating the first device die therein. The second package includes an Independent Passive Device (IPD) die, and a second encapsulant encapsulating the IPD die therein. The package further includes a power module over and bonded to the second package.
1. A method comprising:
forming a wafer comprising a plurality of independent passive device (IPD) dies therein;
sawing the wafer to form a first IPD module, wherein the first IPD module comprises a first plurality of IPD dies therein;
encapsulating the first IPD module in an encapsulant; and
forming a first plurality of redistribution lines over the first IPD module to form an IPD package, wherein the first plurality of redistribution lines interconnect the first plurality of IPD dies as an integrated passive device.
2. The method of claim 1 , wherein the first IPD module comprises a continuous semiconductor substrate continuously extending into the first plurality of IPD dies.
3. The method of claim 1 , wherein each of the first plurality of IPD dies comprises a capacitor, and the first plurality of redistribution lines electrically interconnect a plurality of capacitors in the first plurality of IPD dies.
4. The method of claim 1 , wherein the sawing the wafer further results in a second IPD module to be singulated from the wafer, and wherein the second IPD module comprises a different number of IPD dies than the first IPD module.
5. The method of claim 1 , wherein in the encapsulating, a second IPD module identical to the first IPD module is encapsulated in the encapsulant, and the first IPD module is separated from the second IPD module by the encapsulant.
6. The method of claim 5 further comprising attaching a power module to the first IPD module, wherein at a time when the power module is attached, both of the first IPD module and the second IPD module are in a same continuous region of the encapsulant.
7. The method of claim 1 , wherein each of the first plurality of IPD dies comprises a capacitor, and is free from active devices and other passive devices therein.
8. The method of claim 1 further comprising:
molding a first device die in a molding compound; and
forming second redistribution lines electrically connecting to the first device die to form a device package; and
bonding the IPD package to the device package.
9. The method of claim 8 , wherein the device package is a reconstructed wafer, and wherein the method further comprises installing a cold plate to the reconstructed wafer, wherein the cold plate is attached to the reconstructed wafer through a thermal interface material.
10. The method of claim 2 , wherein after the first IPD module is encapsulated in the encapsulant, the first IPD module still comprises a continuous semiconductor substrate continuously extending into the first plurality of IPD dies.
11. A method comprising:
sawing at least one wafer to form:
a first IPD module comprising a first plurality of IPD dies therein; and
a second IPD module comprising a second plurality of IPD dies therein;
encapsulating both of the first IPD module and the second IPD module in an encapsulant to form a reconstructed wafer; and
sawing the reconstructed wafer into a plurality of identical packages, wherein both of the first IPD module and the second IPD module are in a same package in the plurality of identical packages.
12. The method of claim 11 , wherein the first IPD module and the second IPD module comprise different number of IPD dies.
13. The method of claim 11 further comprising forming a plurality of redistribution lines to electrically connect to the first IPD module and the second IPD module.
14. The method of claim 11 further comprising forming a plurality of metal posts, wherein the plurality of metal posts are encapsulated in the encapsulant.
15. The method of claim 11 further comprising forming a plurality of solder regions as parts of the reconstructed wafer.
16. A method comprising:
sawing a wafer to form:
a first IPD module comprising a first plurality of IPD dies therein; and
a second IPD module comprising a second plurality of IPD dies therein;
encapsulating both of the first IPD module and the second IPD module in an encapsulant to form a reconstructed wafer;
forming a plurality of dielectric layers over the encapsulant, the first IPD module, and the second IPD module; and
forming a plurality of redistribution lines extending into the plurality of dielectric layers, wherein the plurality of redistribution lines interconnect the first plurality of IPD dies therein as a first integrated passive device, and the second plurality of IPD dies therein as a second integrated passive device.
17. The method of claim 16 , wherein a first count of the first plurality of IPD dies is different from a second count of the second plurality of IPD dies.
18. The method of claim 16 further comprising sawing the reconstructed wafer to form a first package and a second package, wherein the first IPD module and the second IPD module are both in a same package.
19. The method of claim 16 further comprising sawing the reconstructed wafer to form a first package and a second package, wherein the first IPD module and the second IPD module are sawed into the first package and the second package, respectively.
20. The method of claim 16 , wherein the first IPD module is free from active devices therein.