IP Library › Granted Patent US 11,923,310

Granted Patent B2

US 11,923,310 · App. 17/397,017 · Granted Mar 5, 2024

Package structure including through via structures

Inventors: Chih-Kai Cheng (Hsinchu County, TW); Tsung-Shu Lin (New Taipei, TW); Tsung-Yu Chen (Hsinchu, TW); Hsien-Pin Hu (Zhubei, TW); Wen-Hsin Wei (Hsinchu, TW)

Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.

H01L23/5384 H01L21/4853 H01L21/486 H01L23/49816 H01L23/5386 H01L23/5389 H01L24/16 H01L24/19 H01L24/24 H01L24/32 H01L24/73 H01L24/81 H01L24/83 H01L24/92 H01L25/0655 H01L25/105 H01L25/50 H01L2224/16227 H01L2224/16238 H01L2224/24225 H01L2224/32225 H01L2224/73204 H01L2224/73267 H01L2224/92125 H01L2224/92244 H01L2225/1035 H01L2225/1058

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Quick Facts

Patent No.: US 11,923,310
App. No.: 17/397,017
Granted: Mar 5, 2024
Kind: B2

External Links

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Abstract

A package structure and method for forming the same are provided. The package structure includes a first through via structure formed in a substrate and a semiconductor die formed below the first through via structure. The package structure further includes a conductive structure formed in a passivation layer over the substrate. The conductive structure includes a first via portion and a second via portion, the first via portion is directly over the first through via structure, and there is no conductive material directly below and in direct contact with the second via portion.

Claims (40)

1. A package structure, comprising:

a first through via structure formed in a substrate;

a semiconductor die formed below the first through via structure;

a conductive structure formed in a passivation layer over the substrate, wherein the conductive structure comprises a first via portion and a second via portion, the first via portion is directly over the first through via structure, and no conductive material is directly below and in direct contact with the second via portion;

an under bump metallization (UBM) layer directly over the second via portion; and

a connector formed over the UBM layer, wherein the connector comprises a protruding portion in the passivation layer, and the second via portion is directly below the protruding portion of the connector.

2. The package structure as claimed in claim 1 , wherein the conductive structure further comprises a first metal portion over the first via portion and a second metal portion over the second via portion, the first metal portion is in direct contact with the second metal portion.

3. The package structure as claimed in claim 1 , wherein a bottom surface of the first via portion is level with a bottom surface of the second via portion.

4. The package structure as claimed in claim 1 , wherein the entirety of a bottom surface of the second via portion is in direct contact with the substrate.

5. The package structure as claimed in claim 1 , wherein the second via portion is separated from the first via portion by the passivation layer in the same horizontal level.

6. The package structure as claimed in claim 1 , wherein the connector overlaps the first through via structure.

7. The package structure as claimed in claim 1 , further comprising:

an interconnect structure formed below the first through via structure, wherein the interconnect structure is between the first through via structure and the semiconductor die.

8. The package structure as claimed in claim 1 , wherein the first via portion has a circular shape when seen from a top-view, the second via portion has a circular shape when seen from a top-view, the first via portion has a first diameter, the second via portion has a second diameter, and the second diameter is greater than the first diameter.

9. The package structure as claimed in claim 1 , further comprising:

a second through via structure formed in the substrate, wherein the second via portion is between the first through via structure and the second through via structure.

10. The package structure as claimed in claim 1 , wherein the second via portion has a ring shape when seen from a top-view.

11. A package structure, comprising:

a first through via structure formed in a substrate;

a semiconductor die formed below the first through via structure;

a conductive structure formed in a passivation layer over the substrate, wherein the conductive structure comprises a first via portion and a second via portion, wherein the second via portion has a bottom surface in direct contact with the substrate, and a first diameter of a bottom surface of the first via portion is smaller than a second diameter of the bottom surface of the second via portion; and

a connector formed directly over the second via portion, wherein the connector comprises a protruding portion towards to the second via portion.

12. The package structure as claimed in claim 11 , wherein the conductive structure further comprises a first metal portion over the first via portion and a second metal portion over the second via portion, the first metal portion is in direct contact with the second metal portion.

13. The package structure as claimed in claim 12 , wherein a bottom surface of the first metal portion has a third diameter smaller than a fourth diameter of a bottom surface of the second metal portion.

14. The package structure as claimed in claim 11 , further comprising:

an under bump metallization (UBM) layer between the second via portion and the connector.

15. The package structure as claimed in claim 11 , further comprising:

an interconnect structure formed below the first through via structure, wherein the interconnect structure is between the first through via structure and the semiconductor die.

16. The package structure as claimed in claim 1 , wherein the second via portion has a bottom surface in direct contact with the substrate.

17. A package structure, comprising:

a first through via structure formed in a substrate;

a second through via structure formed adjacent to the first through via structure;

a semiconductor die formed below the first through via structure and the second through via structure;

a conductive structure formed over the first through via structure;

wherein the conductive structure comprises a first via portion and a second via portion, wherein the second via portion is between and above the first through via structure and the second through via structure, and the second via portion is electrically connected to the first via portion through a first metal portion and a second metal portion, and the second metal portion has a recessed top surface; and

an under bump metallization (UBM) layer formed on and in direct contact with the recessed top surface of the second metal portion.

18. The package structure as claimed in claim 17 , wherein the first metal portion is directly over the first via portion, and the second metal portion is directly over the second via portion.

19. The package structure as claimed in claim 17 , further comprising:

a connector formed over the UBM layer, wherein the connector comprises a protruding portion in a passivation layer, and the second via portion is directly below the protruding portion of the connector.

20. The package structure as claimed in claim 17 , wherein the second via portion has a ring shape when seen from a top-view.

Continuity (2)

Division 16454410 · Jun 27, 2019

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