IP Library › Granted Patent US 11,824,073
Granted Patent B2
US 11,824,073 · App. 17/397,049 · Granted Nov 21, 2023

Image sensor device

Inventors: Yun-Wei Cheng (Taipei, TW); Chun-Hao Chou (Tainan, TW); Kuo-Cheng Lee (Tainan, TW); Hsun-Ying Huang (Tainan, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H01L27/14623H01L27/1463H01L27/1464H01L27/14621H01L27/14627H01L27/14636H01L27/14685H01L27/14687H01L27/14689H01L27/1462H01L27/14629H01L27/14645
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Quick Facts
Patent No.
US 11,824,073
App. No.
17/397,049
Granted
Nov 21, 2023
Kind
B2
Abstract

An image sensor device is provided. The image sensor device includes a substrate having a front surface, a back surface, and a light-sensing region. The image sensor device includes a first isolation structure extending from the front surface into the substrate. The first isolation structure surrounds a first portion of the light-sensing region, and the first isolation structure has a first end portion in the substrate. The image sensor device includes a second isolation structure extending from the back surface into the substrate. The second isolation structure surrounds a second portion of the light-sensing region, the second isolation structure has a second end portion in the substrate, and the second end portion of the second isolation structure is closer to the front surface of the substrate than the first end portion of the first isolation structure.

Claims (29)

1. An image sensor device, comprising:

a substrate having a front surface, a back surface, and a light-sensing region;

a first isolation structure extending from the front surface into the substrate, wherein the first isolation structure surrounds a first portion of the light-sensing region, and the first isolation structure has a first end portion in the substrate; and

a second isolation structure extending from the back surface into the substrate, wherein the second isolation structure surrounds a second portion of the light-sensing region, the second isolation structure has a second end portion in the substrate, and the second end portion of the second isolation structure is closer to the front surface of the substrate than the first end portion of the first isolation structure.

2. The image sensor device as claimed in claim 1 , wherein the first isolation structure comprises a first insulating layer and an etch stop layer, the first insulating layer extends from the front surface into the substrate, and the etch stop layer is between the first insulating layer and the substrate.

3. The image sensor device as claimed in claim 2 , wherein the second isolation structure comprises a light-blocking structure and a second insulating layer between the light-blocking structure and the substrate, and the light-blocking structure extends from the back surface into the substrate.

4. The image sensor device as claimed in claim 3 , wherein the second insulating layer is in direct contact with the etch stop layer.

5. The image sensor device as claimed in claim 1 , wherein the first end portion of the first isolation structure surrounds the second end portion of the second isolation structure.

6. The image sensor device as claimed in claim 1 , wherein the second end portion of the second isolation structure surrounds the first end portion of the first isolation structure.

7. The image sensor device as claimed in claim 1 , wherein the first isolation structure is in direct contact with the second isolation structure.

8. The image sensor device as claimed in claim 1 , wherein the second isolation structure is longer than the first isolation structure.

9. The image sensor device as claimed in claim 1 , wherein the first end portion of the first isolation structure is wider than the second end portion of the second isolation structure.

10. The image sensor device as claimed in claim 1 , wherein the second end portion of the second isolation structure is wider than the first end portion of the first isolation structure.

11. An image sensor device, comprising:

a substrate having a front surface, a back surface, and a light-sensing region;

a first isolation structure extending from the front surface into the substrate, wherein the first isolation structure surrounds the light-sensing region, and the first isolation structure has a first end portion between the front surface and the back surface; and

a second isolation structure extending from the back surface into the substrate, wherein the second isolation structure surrounds the light-sensing region, the second isolation structure has a second end portion between the front surface and the back surface, and the first end portion of the first isolation structure wraps around the second end portion of the second isolation structure.

12. The image sensor device as claimed in claim 11 , wherein the second end portion of the second isolation structure is closer to the front surface than the first end portion of the first isolation structure.

13. The image sensor device as claimed in claim 11 , wherein the first end portion of the first isolation structure is closer to the back surface than the second end portion of the second isolation structure.

14. The image sensor device as claimed in claim 11 , wherein the second isolation structure extends into the first isolation structure.

15. The image sensor device as claimed in claim 11 , wherein the first end portion of the first isolation structure is wider than the second end portion of the second isolation structure.

16. An image sensor device, comprising:

a substrate having a front surface, a back surface, and a light-sensing region;

a first isolation structure extending from the front surface into the substrate, wherein the first isolation structure is beside a first portion of the light-sensing region, and the first isolation structure has a first end portion between the front surface and the back surface; and

a second isolation structure extending from the back surface into the substrate, wherein the second isolation structure is beside a second portion of the light-sensing region, the second isolation structure has a second end portion between the front surface and the back surface, and a first sidewall of the first end portion of the first isolation structure laterally overlaps a second sidewall of the second end portion of the second isolation structure.

17. The image sensor device as claimed in claim 16 , wherein the first isolation structure is in direct contact with the second isolation structure.

18. The image sensor device as claimed in claim 16 , wherein the second end portion of the second isolation structure is wider than the first end portion of the first isolation structure.

19. The image sensor device as claimed in claim 16 , wherein the first end portion of the first isolation structure is wider than the second end portion of the second isolation structure.

20. The image sensor device as claimed in claim 16 , wherein the first isolation structure comprises a dielectric material.

Continuity (3)
Continuation 16595729 · Oct 8, 2019
Division 15807980 · Nov 9, 2017
Related Publication 20210366967A1 · Nov 25, 2021
Cited By (1)
US 12,457,818