Rapid thermal processing system with cooling system

1. A thermal processing system for performing rapid thermal processing of semiconductor workpieces, comprising: a processing chamber; a workpiece support configured to support a workpiece within the processing chamber; a heat source configured to heat the workpiece; a temperature measurement system configured to generate data indicative of a temperature of the workpiece; a cooling system configured to flow a cooling gas over the workpiece supported on the workpiece support, and comprising:

a distribution plate positioned co-axially with the workpiece support, the distribution plate having a surface parallel to the workpiece support, wherein an axis of the distribution plate is at the center of the distribution plate, the distribution plate having a plurality of holes extending axially therethrough, each of the plurality of holes of the distribution plate being at a different radial distance from a center of the distribution plate: wherein the plurality of holes comprises a first hole which extends along a first radial distance away from the axis and a second hole which extends along a second radial distance, wherein the first radial distance is greater than the second radial distance away from the axis, and wherein the first hole is larger than the second hole; and a controller configured to control the heat source and the cooling system based at least in part on the data indicative of the temperature of the workpiece to provide a flow of cooling gas into the processing chamber at a rate of about 300 slm or greater to reduce a t50 peak width of a workpiece during a thermal process.

2. The system of claim 1 , wherein the cooling system further comprises:

a cover plate positioned axially adjacent the distribution plate, opposite the workpiece support;

a collar coupled axially between the distribution plate and the cover plate, the collar, the distribution plate, and the cover plate together defining an interior chamber; and

a gas supply coupled to the collar to provide the cooling gas from a gas source to the interior chamber,

wherein the controller is configured to control the gas supply of the cooling system during a spike anneal thermal process.

3. The system of claim 1 , wherein each of the plurality of holes has a same cross-sectional area.

4. The system of claim 3 , wherein the plurality of holes are increasingly elongated along the radial direction with decreasing radial distance from the center of the distribution plate such that each of the plurality of holes extends along a same azimuthal distance.

5. The system of claim 2 , wherein the gas supply comprises an inlet plate coupled to and extending along an azimuthal direction between first and second ends of the collar spaced apart by a gap distance, the inlet plate comprising a plurality of inlet openings spaced apart along the azimuthal direction.

6. The system of claim 5 , wherein the gas supply further comprises a plurality of inlet tubes, each of the plurality of inlet tubes connecting a respective one of the plurality of inlet openings to the gas source.

7. The system of claim 5 , wherein the gas supply further comprises a baffle plate extending along at least part of the gap distance and spaced radially inwardly from the inlet plate, the baffle plate having a plurality of diffusing openings.

8. The system of claim 7 , wherein the plurality of diffusing openings of the baffle plate and the plurality of inlet openings of the inlet plate are spaced apart along the azimuthal direction, and

wherein the plurality of diffusing openings of the baffle plate and the plurality of inlet openings of the inlet plate alternate along the azimuthal direction.

9. The system of claim 2 , wherein the cover plate, the distribution plate, the collar, and the gas supply are comprised of quartz material.

10. The thermal processing system of claim 1 , wherein the plurality of holes spiral outwardly from the first hole to the second hole.

11. A thermal processing system for performing rapid thermal processing of semiconductor workpieces, comprising: a processing chamber; a workpiece support configured to support a workpiece within the processing chamber; a heat source configured to heat the workpiece; a temperature measurement system configured to generate data indicative of a temperature of the workpiece; a cooling system configured to flow a cooling gas over the workpiece supported on the workpiece support, comprising:

a distribution plate positioned axially adjacent the workpiece support, the distribution plate having a surface parallel to the workpiece support, the distribution plate having a plurality of holes extending axially therethrough, a cover plate positioned axially adjacent the distribution plate, opposite the workpiece support, wherein the plurality of holes comprises a first hole which extends along a first radial distance away from the axis and a second hole which extends along a second radial distance, wherein the first radial distance is greater than the second radial distance away from the axis, and wherein the first hole is larger than the second hole;

a collar coupled axially between the distribution plate and the cover plate, the collar, the distribution plate, and the cover plate together defining an interior chamber; and a gas supply coupled to the collar to provide the cooling gas from a gas source to the interior chamber, the gas supply comprising a plurality of inlet openings and a plurality of tubes such that gas entering the interior chamber is divided to flow into the interior chamber from a plurality of different azimuthal positions.