Memory system
According to one embodiment, a memory system includes a first memory, an interface circuit, and a processor. The interface circuit is configured to receive a first request from an external device. The processor is configured to select a mode among a plurality of modes in response to the first request, and perform, on data read from the first memory, error correction of the selected mode.
1. A memory system comprising:
a first memory;
an interface circuit configured to receive a first command from an external device, device and receive a second command from the external device after receiving the first command, the first command including information including of a time limit of an error correction to be executed in the memory system, the second command specifying to read data from the first memory; and
a processor circuitry configured to:
select a mode among a first plurality of modes of error correction based on the time limit included in the received first command, the first plurality of modes of error correction being a plurality of kinds of error correction which the memory system is capable of performing;
read the data from the first memory after receiving the second command;
perform, on the read data, an error correction corresponding to the selected mode; and
send a response including unrecovered error to the external device based on a failure of the error correction on the read data.
2. The memory system according to claim 1 , further comprising:
a second memory configured to store information specifying the first plurality of modes of error correction and processing time for each of the first plurality of modes of error correction, each of the first plurality of modes of error correction corresponding to one of the plurality of kinds of error correction which the memory system is capable of performing on data read from the first memory.
3. The memory system according to claim 1 , wherein
the processor circuitry is configured to:
select a second plurality of modes of error correction among the first plurality of modes of error correction based on the time limit included in the received first command and processing time for each of the first plurality of modes; and
select the mode among the second plurality of modes of error correction.
4. The memory system according to claim 3 , wherein the processor circuitry is configured to select the second plurality of modes so that total of processing times for the second plurality of modes is less than the time limit included in the received first command.
5. The memory system according to claim 1 , wherein the first memory includes a NAND type flash memory.
6. The memory system according to claim 1 , wherein the interface circuit is in conformity with SCSI (small computer system interface) standard or PCI Express standard.
7. The memory system according to claim 1 , wherein
the processor circuitry selects the mode such that latency for performing the second command using error correction corresponding to the mode does not exceed an upper limit time.
8. A method for controlling a memory system which includes a first memory, the method comprising:
receiving a first command from an external device and receiving a second command from the external device after receiving the first command, the first command including information of a time limit of an error correction to be executed in the memory system, the second command specifying to read data from the first memory;
selecting a mode among a first plurality of modes of error correction based on the time limit included in the received first command, the first plurality of modes of error correction being a plurality of kinds of error correction which the memory system is capable of performing;
reading the data from the first memory after receiving the second command;
performing, on the read data, an error correction corresponding to the selected mode; and
sending a response including unrecovered error to the external device based on a failure of the error correction on the read data.
9. The method according to claim 8 , further comprising:
storing information specifying the first plurality of modes of error correction and processing time for each of the first plurality of modes of error correction, each of the first plurality of modes of error correction corresponding to one of the plurality of kinds of error correction which the memory system is capable of performing on data read from the first memory.
10. The method according to claim 5 , wherein
the selecting the mode includes:
selecting a second plurality of modes of error correction among the first plurality of modes of error correction based on the time limit included in the received first command and processing time for each of the first plurality of modes; and
selecting the mode among the second plurality of modes of error correction.
11. The method according to claim 10 , wherein selecting the second plurality of modes of error correction is selecting the second plurality of modes so that total of processing times for the second plurality of modes is less than the time limit included in the received first command.
12. The method according to claim 8 , wherein the first memory includes a NAND type flash memory.
13. The method according to claim 8 , wherein the receiving the information is in conformity with SCSI standard or PCI Express standard.
14. The method according to claim 8 , wherein
the selecting a mode comprises selecting the mode such that latency for performing the second command using error correction corresponding to the mode does not exceed an upper limit time.