Semiconductor device including three-dimensional inductor structure and method of forming the same

1. A semiconductor device comprising:

a compound substrate comprising a front side surface and a backside surface;

at least one front side pattern disposed on the front side surface of the compound substrate, wherein the at least one front side pattern comprises a head end and a tail end;

at least one backside pattern disposed on the backside surface of the compound substrate; and

at least one through-wafer via structure penetrating the compound substrate from the front side surface to the backside surface;

wherein the at least one front side pattern, the at least one backside pattern, and the at least one through-wafer via structure form a three-dimensional inductor structure; and

the least one front side pattern comprises a plurality of front side metal layers, the plurality of front side metal layers being stacked together and each of the plurality of front side metal layers extending from the head end to the tail end.

2. The semiconductor device of claim 1 , wherein the compound substrate is a Group III-V semiconductor substrate or a Group II-VI semiconductor substrate.

3. The semiconductor device of claim 1 , wherein the compound substrate is a gallium arsenide semiconductor substrate.

4. The semiconductor device of claim 1 , wherein the at least one backside surface pattern is made of a backside metal layer.

5. The semiconductor device of claim 1 , wherein the at least one through-wafer via structure has an inductive characteristic.

6. The semiconductor device of claim 1 , wherein:

the at least one front side pattern comprises a plurality of front side conductive paths;

the at least one backside pattern comprises a plurality of backside conductive paths; and

the at least one through-wafer via structure connects the front side conductive paths and the backside conductive paths to form a continuous conductive path.

7. The semiconductor device of claim 6 , wherein:

the plurality of front side conductive paths comprises a first front side conductive path, a second front side conductive path, and a third front side conductive path;

the at least one through-wafer via structure comprises a first through-wafer via structure, a second through-wafer via structure, a third through-wafer via structure, and a fourth through-wafer via structure;

the plurality of backside conductive paths comprises a first backside conductive path and a second backside conductive path;

the first front side conductive path is coupled to the first backside conductive path via the first through-wafer via structure;

the second front side conductive path is coupled to the first backside conductive path via the second through-wafer via structure, and to the second backside conductive path via the third through-wafer via structure; and

the third front side conductive path is coupled to the second backside conductive path via the fourth through-wafer via structure.

8. The semiconductor device of claim 7 , wherein:

a tail end of the first front side conductive path is aligned with a head end of the first backside conductive path;

a head end of the second front side conductive path is aligned with a tail end of the first backside conductive path;

a tail end of the second front side conductive path is aligned with a head end of the second backside conductive path; and

a head end of the third front side conductive path is aligned with a tail end of the second backside conductive path.

9. The semiconductor device of claim 6 , wherein an electromagnetic direction of the continuous conductive path is parallel to the front side surface of the compound substrate.

10. The semiconductor device of claim 1 , further comprising an active circuit disposed on the compound substrate.

11. The semiconductor device of claim 10 , wherein the active circuit includes an amplifier circuit, a low-noise amplifier circuit or a switch.

12. The semiconductor device of claim 1 , wherein the three-dimensional inductor structure is fabricated using an integrated passive device (IPD) process, a heterojunction bipolar transistor (HBT) process, or a high electron mobility transistor (HEMT) process.

13. The semiconductor device of claim 1 , wherein the at least one front side pattern and the at least one backside pattern have a straight-line shape.

14. The semiconductor device of claim 1 , wherein the at least one front side pattern, the at least one backside pattern and the at least one through-wafer via structure are curved in shape.

15. The semiconductor device of claim 1 , wherein the three-dimensional inductor structure generates a magnetic flux parallel to the compound substrate.

16. The semiconductor device of claim 1 , wherein the three-dimensional inductor structure generates a magnetic flux perpendicular to the front side surface of the compound substrate.

17. The semiconductor device of claim 1 , wherein the at least one through-wafer via structure comprises:

a first via end having a first diameter and a first surface, the first surface being in contact with the at least one front side pattern;

a second via end having a second diameter and a second surface, and the second surface being in contact with the at least one backside pattern;

the first diameter is less than the second diameter; and

the first surface is less than the second surface.