Semiconductor memory device
The invention discloses a semiconductor memory device, which is characterized by comprising a substrate defining a cell region and an adjacent periphery region, a plurality of bit lines are arranged on the substrate and arranged along a first direction, each bit line comprises a conductive part, and the bit line comprises four sidewalls, and a spacer surrounds the four sidewalls of the bit line, the spacer comprises two short spacers covering two ends of the conductive part, two long spacers covering the two long sides of the conductive part, and a plurality of storage node contact isolations located between any two adjacent bit lines, at least a part of the storage node contact isolations cover directly above the spacers. The structure of the invention can improve the electrical isolation effect, preferably avoid leakage current and improve the quality of components.
1. A semiconductor memory device, comprising:
a substrate;
a plurality of bit lines arranged on the substrate and arranged along a first direction, wherein each bit line comprises a conductive part and the conductive part comprises four sidewalls, wherein the four sidewalls comprises two ends and two long sides;
a spacer covers parts of the four sidewalls of the bit line, wherein the spacer includes two short spacers covering the two ends of the conductive part and two long spacers covering the two long sides of the conductive part; and
a plurality of storage node contact isolations (SCISOs) located between any two adjacent bit lines, wherein at least one storage node contact isolation contacts and covers at least one of the short spacers of the bit lines.
2. The semiconductor memory device according to claim 1 , wherein the long spacer further comprises a first long spacer and a second long spacer, the second long spacer covers the outer side of the first long spacer, and wherein the height of the first long spacer is higher than the height of the second long spacer.
3. The semiconductor memory device according to claim 2 , wherein the height of the short spacer is higher than the height of the second long spacer, but the height of the short spacer is lower than the height of the first long spacer.
4. The semiconductor memory device according to claim 1 , wherein the storage node contact isolation contacting the short spacer also simultaneously contacts a part of the two long spacers.
5. A semiconductor memory device, comprising:
a substrate;
a plurality of bit lines arranged on the substrate and arranged along a first direction, wherein each bit line comprises a conductive part and the conductive part comprises four sidewalls, wherein the four sidewalls comprises two ends and two long sides, wherein the plurality of bit lines comprise at least one long bit line and at least one short bit line, wherein the long bit line and the short bit line have different extension lengths, and a top surface of the short spacer near one end of the long bit line is higher than a top surface of the short spacer near one end of the short bit line;
a spacer covers parts of the four sidewalls of the bit line, wherein the spacer includes two short spacers covering the two ends of the conductive part and two long spacers covering the two long sides of the conductive part; and
a plurality of storage node contact isolations (SCISOs) located between any two adjacent bit lines.
6. The semiconductor memory device according to claim 5 , wherein the long spacer further comprises a first long spacer and a second long spacer, the second long spacer covers the outer side of the first long spacer, and wherein the height of the first long spacer is higher than the height of the second long spacer.
7. The semiconductor memory device according to claim 5 , wherein a cell region and an adjacent periphery region are defined on the substrate, wherein the area between two adjacent bit lines and two adjacent storage node contact isolations is further defined as a storage hole, wherein the cell region contains a conductive layer to fill each storage hole, and the conductive layer in the storage hole is defined as a plurality of storage node contacts, and parts of the storage hole in the periphery region does not contain the conductive layer.
8. The semiconductor memory device according to claim 7 , wherein at a boundary between the periphery region and the cell region, the storage hole is only filled with a part of the conductive layer, but not filled up with the conductive layer.
9. The semiconductor memory device according to claim 5 , wherein a top surface height of the short spacer is smaller than a top surface height of the conductive part of the bit line.