Structure of emitter electrode for enhancing ion currents
The present invention discloses a structure of an emitter electrode for enhancing ion currents, including a tip end part and a shank part. The tip end part has a pinpoint, a first diameter, and a radius of curvature. A length of the tip end part with the shank part is from the pinpoint to a first position of the shank part and a distance between the first position and the pinpoint is 300 times the first diameter. The radius of curvature of the tip end part ranges from 50 nanometers to 5 micrometers. The first diameter is 2 times the radius of curvature.
1. A structure of an emitter electrode for enhancing ion currents, comprising:
a tip end part, formed at a front end of the structure of the emitter electrode, having a pinpoint, a first diameter, and a radius of curvature; and
a shank part, formed in a rear of the tip end part at the front end of the structure of the emitter electrode;
wherein a length of the tip end part with the shank part is from the pinpoint to a first position of the shank part, and a first distance between the first position and the pinpoint is 300 times of the first diameter;
wherein the radius of curvature of the tip end part ranges from 50 nanometers to 5 micrometers;
wherein the first diameter is 2 times of the radius of curvature.
2. The structure as claimed in claim 1 , wherein there is at least one first node position between a second position and a third position of the shank part and a second diameter corresponding to the at least one first node position is less than 1.2 times of the first diameter;
wherein a second distance between the pinpoint and the second position is 3 times of the first diameter and a third distance between the pinpoint and the third position is 60 times of the first diameter.
3. The structure as claimed in claim 2 , wherein a third diameter of the shank part between the pinpoint and the second position is less than 1.2 times of the first diameter.
4. The structure as claimed in claim 1 , wherein there is at least one second node position between a fourth position and the first position of the shank part and a fourth diameter corresponding to the at least one second node position is less than 2 times of the first diameter;
wherein a fourth distance between the pinpoint and the fourth position is 18 times of the first diameter.
5. The structure as claimed in claim 4 , wherein a fifth diameter of the shank part between the pinpoint and the fourth position is less than 2 times of the first diameter.