Light emitting apparatus using semiconductor light-emitting device
A light emitting apparatus includes a plurality of wiring electrodes, a plurality of semiconductor light emitting devices connected between two of the plurality of wiring electrodes, and a reflection layer of metal disposed under the plurality of semiconductor light emitting devices, wherein the plurality of wiring electrodes are connected in series with each other by the plurality of semiconductor light emitting devices, and at least one of the plurality of semiconductor light emitting devices is connected between two consecutive wiring electrodes among the plurality of wiring electrodes.
1. A light emitting apparatus comprising:
a plurality of wiring electrodes;
a plurality of semiconductor light emitting devices connected between two of the plurality of wiring electrodes; and
a reflection layer of metal disposed under the plurality of semiconductor light emitting devices,
wherein the plurality of wiring electrodes are connected in series with each other by the plurality of semiconductor light emitting devices,
wherein at least one of the plurality of semiconductor light emitting devices is connected between two consecutive wiring electrodes among the plurality of wiring electrodes,
wherein the plurality of wiring electrodes include a first wiring electrode, a second wiring electrode and a third wiring electrode,
wherein the second wiring electrode is interposed between the first wiring electrode and the third wiring electrode,
wherein the second wiring electrode includes a bus electrode extending in a first direction and a pair of electrode lines extending away from opposite sides of the bus electrode in a second direction intersecting the first direction,
wherein each of the plurality of wiring electrodes protrudes from a first bus electrode and a second bus electrode,
wherein the light emitting apparatus comprises a current injection part extending along one direction in which the first and second bus electrodes extend, and is disposed parallel to the first and second bus electrodes,
wherein the light emitting apparatus further comprises a plurality of connection electrodes disposed between the first and second bus electrodes and the current injection part, and
wherein resistance values of each of the plurality of connection electrodes are different from each other.
2. The light emitting apparatus according to claim 1 , wherein the plurality of semiconductor light emitting devices are placed into at least one group, and at least two semiconductor light emitting devices included in the at least one group are connected in parallel between two identical wiring electrodes.
3. The light emitting apparatus according to claim 1 , wherein the reflection layer is provided with a power connection part for supplying power to the reflection layer.
4. The light emitting apparatus according to claim 3 , wherein when power is supplied to the plurality of wiring electrodes and the plurality of semiconductor light emitting devices, power is supplied to the reflection layer through the power connection part.
5. The light emitting apparatus according to claim 4 , wherein a voltage applied to the reflection layer is greater than or equal to a highest voltage among voltages applied to the plurality of wiring electrodes.
6. The light emitting apparatus according to claim 3 , wherein the power connection part has a form in which a part of the reflection layer is extended from another part of the reflection layer.
7. The light emitting apparatus according to claim 1 , wherein the reflection layer includes a plurality of partial reflection layers spaced apart from each other in a horizontal direction.
8. The light emitting apparatus according to claim 7 , wherein the plurality of semiconductor light emitting devices are divided into a plurality of groups,
wherein at least two semiconductor light emitting devices included in the same group are connected in parallel between two same wiring electrodes, and
wherein a number of the plurality of partial reflection layers is equal to that of the plurality of groups.
9. The light emitting apparatus according to claim 3 , wherein the power connection part has a form in which a metal of the same material as that of the reflection layer is connected to the reflection layer.
10. The light emitting apparatus according to claim 3 , wherein a voltage applied to the reflection layer is the same with a voltage applied to any one of the plurality of wiring electrodes.
11. The light emitting apparatus according to claim 3 , wherein a voltage applied to any one of the plurality of wiring electrodes is less than a voltage applied to the reflection layer.
12. The light emitting apparatus according to claim 7 , wherein a voltage applied to each of the plurality of partial reflection layers corresponds to a median value of voltages applied to a corresponding wiring electrode.
13. The light emitting apparatus according to claim 12 , wherein a voltage corresponding to an intermediate value between a first voltage of the first wiring electrode of the plurality of wiring electrodes and the second voltage of a second wiring electrode of the plurality of wiring electrodes is applied to a first partial reflection layer of the plurality of partial reflection layers.
14. The light emitting apparatus according to claim 8 , wherein a voltage applied to each of the plurality of partial reflection layers corresponds to a median value of voltages applied to a corresponding wiring electrode.
15. A electric device comprising:
the light emitting apparatus according to claim 1 ,
wherein the electric device is any one of a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a PDA (personal digital assistant), a PMP (portable multimedia player), a navigation, a slate PC (personal computer), a Tablet PC, an Ultra Book, a digital TV or a desktop computer.
16. The light emitting apparatus according to claim 1 , wherein a resistance value of each of the plurality of connection electrodes decrease as a distance from a power supply increases.
17. A light emitting apparatus comprising:
a plurality of wiring electrodes;
a plurality of semiconductor light emitting devices connected between two of the plurality of wiring electrodes; and
a reflection layer of metal disposed under the plurality of semiconductor light emitting devices,
wherein the plurality of wiring electrodes are connected in series with each other by the plurality of semiconductor light emitting devices,
wherein at least one of the plurality of semiconductor light emitting devices is connected between two consecutive wiring electrodes among the plurality of wiring electrodes,
wherein the plurality of wiring electrodes include a first wiring electrode, a second wiring electrode and a third wiring electrode,
wherein the second wiring electrode is interposed between the first wiring electrode and the third wiring electrode,
wherein the second wiring electrode includes a bus electrode extending in a first direction and a pair of electrode lines extending away from opposite sides of the bus electrode in a second direction intersecting the first direction,
wherein each of the plurality of wiring electrodes protrudes from a first bus electrode and a second bus electrode,
wherein the light emitting apparatus comprises a current injection part extending along one direction in which the first and second bus electrodes extend, and is disposed parallel to the first and second bus electrodes,
wherein the light emitting apparatus comprises a plurality of connection electrodes disposed between the first and second bus electrodes and the current injection part,
wherein a resistance value of each of the plurality of connection electrodes decrease as a distance from a power supply increases, and
wherein each connection electrode includes a first connection part connected to the current injection part, a resistor part extending from one end of the first connection part along the one direction, and a second connection part extending from one end of the resistor part and connected to any one of the plurality of wiring electrodes.
18. The light emitting apparatus according to claim 17 , wherein a length of the resistor part provided in each connection electrode is shorter as a distance from the power supply increases.
19. The light emitting apparatus according to claim 1 , further comprising a wiring board on which the plurality of wiring electrodes are disposed,
wherein the reflection layer is disposed under the wiring board.
20. A light emitting apparatus comprising:
a plurality of wiring electrodes;
a plurality of semiconductor light emitting devices connected between two of the plurality of wiring electrodes; and
a reflection layer of metal disposed under the plurality of semiconductor light emitting devices,
wherein the plurality of wiring electrodes are connected in series with each other by the plurality of semiconductor light emitting devices,
wherein at least one of the plurality of semiconductor light emitting devices is connected between two consecutive wiring electrodes among the plurality of wiring electrodes,
wherein each of the plurality of wiring electrodes protrudes from a first bus electrodes and a second bus electrode,
wherein the light emitting apparatus further comprises a current injection part extending along one direction in which the first and second bus electrodes extend, and is disposed parallel to the first and second bus electrodes,
wherein the light emitting apparatus further comprises a plurality of connection electrodes disposed between the first and second bus electrodes and the current injection part, and
wherein resistance values of each of the plurality of connection electrodes are different from each other.