Apparatus and method for cleaning a support structure in a lithographic system
Apparatus for and method of removing a contaminant from a working surface of a lithography support such as a reticle or wafer stage in an EUV or a DUV photolithography system in which abase supporting the substrate is provided with a surface profile so as to be thicker towards a middle portion of the base so that when a substrate supported by the base is pressed between the working surface and the base the contaminant is transferred from the working surface to the substrate.
1. An apparatus for use in a system for generating radiation for photolithography, the apparatus comprising:
a base arranged to support a substrate on a first surface of the base, the first surface being configured to have a surface profile that is higher at a middle portion of the first surface than at a laterally peripheral portion of the first surface; and
a clamping structure configured to make contact with the substrate,
wherein the clamping structure is configured to tilt with respect to the base, such that the clamping structure exerts a force on the substrate, and
wherein an insert is disposed between the substrate and the base, at least one lateral surface of the insert having convex curvature.
2. The apparatus of claim 1 , wherein the base is a part of a substrate transport module.
3. The apparatus of claim 1 , wherein the surface profile comprises a first protrusion at a first position at the middle portion of the first surface and a second protrusion at a second position between the first protrusion and the laterally peripheral portion of the first surface, the base having a first thickness at the first protrusion and a second thickness at the second protrusion, the first thickness being greater than the second thickness.
4. The apparatus of claim 3 , wherein the first protrusion is configured to provide a spherical contact with the substrate.
5. The apparatus of claim 3 , wherein the first protrusion and the second protrusion have a substantially hemispherical cross section.
6. The apparatus of claim 1 , wherein the surface profile comprises a first protrusion at a first position at the middle portion of the first surface, a second protrusion at a second position between the first protrusion and the laterally peripheral portion of the first surface, and a third protrusion at a third position between the second protrusion and the laterally peripheral portion of the first surface, the base having a first thickness at the first protrusion, a second thickness at the second protrusion, and a third thickness at the third protrusion, the first thickness being greater than the second thickness and the second thickness being greater than the third thickness.
7. The apparatus of claim 3 , wherein the first protrusion is integral with the base.
8. The apparatus of claim 3 , wherein the first protrusion is formed on the base.
9. The apparatus of claim 1 , wherein the substrate comprises a cleaning reticle.
10. An apparatus for use in a system for generating radiation for photolithography, the apparatus comprising:
a substrate;
a base arranged to support the substrate on a first surface of the base, the substrate being supported in a manner such that a middle portion of a top surface of the substrate extends vertically farther from the base than a peripheral portion of the substrate; and
a clamping structure configured to make contact with the substrate,
wherein the clamping structure is configured to tilt with respect to the base such that the clamping structure exerts a force on the substrate, and
wherein an insert is disposed between the substrate and the base, at least one lateral surface of the insert having convex curvature.
11. The apparatus of claim 10 , wherein the base has convex curvature.
12. The apparatus of claim 10 , wherein at least one surface of the substrate has convex curvature.