Granted Patent B2

US 12,413,051 · App. 17/419,826 · Granted Sep 9, 2025

Inventors: Misaki Ishida (Kanagawa, JP); Naoto Jikutani (Miyagi, JP); Kazuma Izumiya (Miyagi, JP)

Assignee: RICOH COMPANY, LTD.

H01S5/423H01S5/005H01S5/02253H01S5/0234H01S5/0237H01S5/04256H01S5/18305G01S7/4814

Abstract

Claims (40)

1. A surface emitting laser module comprising:

a base substrate;

a surface emitting laser substrate mounted on the base substrate, the surface emitting laser substrate including a surface emitting laser element, and the surface emitting laser substrate having a first face facing the base substrate and a second face facing away from the base substrate; and

an optical member facing the second face and including an optical element to receive light emitted from the second face of the surface emitting laser element,

wherein the surface emitting laser element includes:

a first semiconductor layer of a first conductivity type;

a second semiconductor layer of a second conductivity type;

a first electrode provided on the first face and connected to the first semiconductor layer; and

a second electrode provided on the first face and connected to the second semiconductor layer,

wherein the base substrate has a third face facing the first face of the surface emitting laser substrate, and includes:

a third electrode provided on the third face and connected to the first electrode; and

a fourth electrode provided on the third face and connected to the second electrode,

wherein the first electrode and the second electrode are disposed away from a light emitting element structure comprising an array of a plurality of mesas and is to generate light in the surface emitting laser element, and

wherein the second electrode and a current injection area of the plurality of mesas are connected by an interconnect.

2. The surface emitting laser module according to claim 1 , wherein the surface emitting laser substrate is flip-chip mounted on the base substrate.

3. The surface emitting laser module according to claim 1 , wherein the surface emitting laser element includes an active layer between the first semiconductor layer and the second semiconductor layer.

4. The surface emitting laser module according to claim 1 , further comprising a bonding member bonding the optical member with the second face of the surface emitting laser substrate.

5. The surface emitting laser module according to claim 4 , wherein, when viewed from a direction perpendicular to the second face of the surface emitting laser substrate, at least a part of the bonding member is included in an area in which the first electrode and the second electrode are included.

6. The surface emitting laser module according to claim 4 , wherein, when viewed from a direction perpendicular to the second face of the surface emitting laser substrate, at least a part of the bonding member overlaps either the first electrode or the second electrode, or overlaps both of the first electrode and the second electrode.

7. The surface emitting laser module according to claim 1 , further comprising a bonding member bonding the optical member with the third face of the base substrate.

8. The surface emitting laser module according to claim 7 , wherein, when viewed from a direction perpendicular to the second face of the surface emitting laser substrate, the first electrode and the second electrode are disposed at a side of the surface emitting laser element relative to the bonding member.

9. The surface emitting laser module according to claim 7 , wherein the bonding member includes a spacer interposed between the optical member and the base substrate.

10. An optical device comprising:

the surface emitting laser module according to claim 1 ; and

a second optical element to receive light emitted from the surface emitting laser module.

11. An optical device comprising:

the surface emitting laser module according to claim 1 ; and

a light receiving structure to receive light that is emitted by the surface emitting laser module and is reflected by or passing through a target object.

12. A surface emitting laser substrate having a first face and a second face opposite to the first face, the surface emitting laser substrate comprising:

a surface emitting laser element to emit light from the second face,

wherein the surface emitting laser element includes:

a first semiconductor layer of a first conductivity type;

a second semiconductor layer of a second conductivity type;

a first electrode provided on the first face and connected to the first semiconductor layer; and

a second electrode provided on the first face and connected to the second semiconductor layer,

wherein the first electrode and the second electrode are disposed away from a light emitting element structure comprising an array of a plurality mesas and is to generate light in the surface emitting laser element, and

wherein the second electrode and a current injection area of the plurality of mesas are connected by an interconnect.

13. The surface emitting laser substrate according to claim 12 , wherein the surface emitting laser element includes an active layer between the first semiconductor layer and the second semiconductor layer.

14. The surface emitting laser substrate according to claim 12 , further comprising:

a bonding area provided on the second face to be bonded with an optical element receiving light emitted from the surface emitting laser element.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (35)