IP Library Granted Patent US 12,054,822
Granted Patent B2
US 12,054,822 · App. 17/425,386 · Granted Aug 6, 2024

Sputtering target product and method for producing recycled sputtering target product

Inventors: Kengo Kaminaga (Ibaraki, JP); Keijiro Sugimoto (Ibaraki, JP); Yuki Yamada (Ibaraki, JP); Shuhei Murata (Ibaraki, JP)
Assignee: JX Advanced Metals Corporation
C23C14/3414H01J37/3423
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,054,822
App. No.
17/425,386
Granted
Aug 6, 2024
Kind
B2
Abstract

The disclosure is related to reducing the cost of sputtering target products. Provided is a sputtering target product wherein: the sputtering target product includes a target, a backing plate or backing tube, and insert material layer; at least a part of the non-sputtering side of the target is profiled so as to have protrusions and recesses that have plane symmetry; the insert material layer is formed so as to adhere closely to the profiled side, and the insert material is made of metal with specific gravity that is at least less than those of the metal constituting the target.

Claims (36)

1. A sputtering target product comprising a target, a backing plate or a backing tube, and insert material layer,

wherein at least a part of a non-sputtered side of the target is profiled such that the non-sputtered side has a plurality of protrusions and a single or a plurality of recesses that have plane symmetry,

the insert material layer is formed so as to adhere closely to the profiled side,

the insert material consists of metal with specific gravity that is at least less than those of metal constituting the target, and

the backing plate or the backing tube has a single recess.

2. A sputtering target product of claim 1 , wherein a melting point of the insert material is lower than those of the target.

3. A sputtering target product of claim 1 ,

wherein an etching rate of the insert material is higher than those of the target, and

at least a part of a lateral side of the insert material layer is exposed without being covered by the target or the backing plate or the backing tube.

4. A sputtering target product of claim 1 ,

wherein the target consists of Ta or Ta alloy,

the backing plate or the backing tube consists of Cu or Cu alloy, and

the insert material consists of Al or Al alloy.

5. A sputtering target product of claim 1 ,

wherein all parts of the non-sputtered side of the target are covered by the insert material, or are covered by both the backing plate or the backing tube and the insert material.

6. A sputtering target product of claim 5 , wherein all parts of the non-sputtered side of the target are covered by the insert material.

7. A method for producing a recycled sputtering target product of claim 1 , the method comprising:

separating the target and the backing plate or the backing tube; and

bonding the backing plate or the backing tube to a new target,

wherein the separating includes any one of:

softening or melting the insert material by heat treatment; and

etching the insert material.

8. A sputtering target product of claim 2 , wherein an etching rate of the insert material is higher than those of the target, and

at least a part of a lateral side of the insert material layer is exposed without being covered by the target or the backing plate or the backing tube.

9. A sputtering target product of claim 2 ,

wherein all parts of the non-sputtered side of the target are covered by the insert material, or are covered by both the backing plate or the backing tube and the insert material.

10. A sputtering target product of claim 3 ,

wherein all parts of the non-sputtered side of the target are covered by the insert material, or are covered by both the backing plate or the backing tube and the insert material.

11. Sputtering target product of claim 8 ,

wherein all parts of the non-sputtered side of the target are covered by the insert material, or are covered by both the backing plate or the backing tube and the insert material.

12. A sputtering target product of claim 4 ,

wherein all parts of the non-sputtered side of the target are covered by the insert material, or are covered by both the backing plate or the backing tube and the insert material.

13. A sputtering target product of claim 9 , wherein all parts of the non-sputtered side of the target are covered by the insert material.

14. A sputtering target product of claim 10 , wherein all parts of the non-sputtered side of the target are covered by the insert material.

15. A sputtering target product of claim 11 , wherein all parts of the non-sputtered side of the target are covered by the insert material.

16. A sputtering target product of claim 12 , wherein all parts of the non-sputtered side of the target are covered by the insert material.

Assignments (4)
CHANGE OF NAME Recorded Jun 27, 2024
From: JX METALS CORPORATION
To: JX ADVANCED METALS CORPORATION
Reel/Frame 068040/0819 →
CHANGE OF NAME Recorded May 30, 2024
From: JX NIPPON MINING & METALS CORPORATION
To: JX METALS CORPORATION
Reel/Frame 067571/0975 →
CHANGE OF NAME Recorded May 30, 2024
From: JX METALS CORPORATION
To: JX ADVANCED METALS CORPORATION
Reel/Frame 067571/0982 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 23, 2021
From: KAMINAGA, KENGO; SUGIMOTO, KEIJIRO; YAMADA, YUKI; MURATA, SHUHEI
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 056957/0337 →
Priority Claims (1)
JP 2019-064775 · Mar 28, 2019 · national
Continuity (2)
Related Publication 20220098723A1 · Mar 31, 2022
Related Publication 20230132362A9 · Apr 27, 2023