Etching composition for silicon nitride film
The present invention relates to an etching composition for selectively etching a silicon nitride layer. The etching composition includes an inorganic acid, an epoxy-based silicon compound, and water. The etching composition of the present invention selectively removes a silicon nitride layer while minimizing damage to an underlying metal layer and preventing a silicon oxide layer from being etched.
1. An etching composition for a silicon nitride layer, the composition comprising an inorganic acid, an epoxy-based silicon compound, and water,
wherein the composition comprises 80% to 90% by weight of the inorganic acid, 0.005% to 5% by weight of the epoxy-based silicon compound, and the water accounting for the remaining proportion.
2. The composition of claim 1 , further comprising a fluorine compound.
3. The composition of claim 2 , wherein the fluorine compound is selected from the group consisting of hydrogen fluoride, ammonium fluoride, ammonium hydrogen fluoride, or mixtures of two or more thereof.
4. The composition of claim 2 , wherein the epoxy-based silicon compound is any one selected from the group consisting of gamma-Glycidoxymethyltrimethoxysilane, gamma-Glycidoxyethyltrimethoxysilane, gamma-Glycidoxypropyltrimethoxysilane, gamma-Glycidoxymethyltriethoxysilane, gamma-Glycidoxymethyltripropoxysilane, gamma-Glycidoxyethyltriethoxysilane, gamma-Glycidoxyethyltripropoxysilane, gamma-Glycidoxypropyltriethoxysilane, gamma-Glycidoxypropyltripropoxysilane, beta-(3,4-Epoxycyclohexyl)methyltrimethoxysilane, beta-(3,4-Epoxycyclohexyl)ethyltrimethoxysilane, beta-(3,4-Epoxycyclohexyl)propyltrimethoxysilane, beta-(3,4-Epoxycyclohexyl)methyltriethoxysilane, beta-(3,4-Epoxycyclohexyl)methyltripropoxysilane, beta-(3,4-Epoxycyclohexyl)ethyltriethoxysilane, beta-(3,4-Epoxycyclohexyl)ethyltripropoxysilane, beta-(3,4-Epoxycyclohexyl)propyltriethoxysilane, beta-(3,4-Epoxycyclohexyl)propyltripropoxysilane, and mixtures of two or more thereof.
5. The composition of claim 2 , wherein the inorganic acid is selected from the group consisting of sulfuric acid, nitric acid, phosphoric acid, and mixtures of two or more thereof.
6. The composition of claim 2 , wherein the epoxy-based silicon compound inhibits the silicon oxide layer from being etched at a temperature in a range of from 120° C. to 190° C.
7. The composition of claim 1 , wherein the epoxy-based silicon compound is any one selected from the group consisting of gamma-Glycidoxymethyltrimethoxysilane, gamma-Glycidoxyethyltrimethoxysilane, gamma-Glycidoxypropyltrimethoxysilane, gamma-Glycidoxymethyltriethoxysilane, gamma-Glycidoxymethyltripropoxysilane, gamma-Glycidoxyethyltriethoxysilane, gamma-Glycidoxyethyltripropoxysilane, gamma-Glycidoxypropyltriethoxysilane, gamma-Glycidoxypropyltripropoxysilane, beta-(3,4-Epoxycyclohexyl)methyltrimethoxysilane, beta-(3,4-Epoxycyclohexyl)ethyltrimethoxysilane, beta-(3,4-Epoxycyclohexyl)propyltrimethoxysilane, beta-(3,4-Epoxycyclohexyl)methyltriethoxysilane, beta-(3,4-Epoxycyclohexyl)methyltripropoxysilane, beta-(3,4-Epoxycyclohexyl)ethyltriethoxysilane, beta-(3,4-Epoxycyclohexyl)ethyltripropoxysilane, beta-(3,4-Epoxycyclohexyl)propyltriethoxysilane, beta-(3,4-Epoxycyclohexyl)propyltripropoxysilane, and mixtures of two or more thereof.
8. The composition of claim 1 , wherein the inorganic acid is selected from the group consisting of sulfuric acid, nitric acid, phosphoric acid, and mixtures of two or more thereof.
9. The composition of claim 8 , wherein the inorganic acid is phosphoric acid and sulfuric acid.
10. The composition of claim 1 , wherein the epoxy-based silicon compound inhibits the silicon oxide layer from being etched at a temperature in a range of from 120° C. to 190° C.
11. The composition of claim 10 , wherein the composition etches the silicon nitride layer at an etching rate that is 200 or more times higher than that of the silicon oxide layer at 160° C.
12. The composition of claim 11 , wherein the composition etches the silicon nitride layer at an etching rate that is 1000 or more times higher than that of the silicon oxide layer.