Imaging unit and electronic apparatus with first and second light blocking films
An imaging unit having a superior phase-difference detection characteristic is provided. The imaging unit includes two or more image-plane phase-difference detection pixels each including a semiconductor layer, a photoelectric converter, a charge holding section, a first light-blocking film, and a second light-blocking film. The semiconductor layer includes a front surface and a back surface on an opposite side to the front surface. The photoelectric converter is provided in the semiconductor layer, and is configured to generate electric charge corresponding to a light reception amount by photoelectric conversion. The charge holding section is provided between the front surface and the photoelectric converter in the semiconductor layer, and is configured to hold the electric charge. The first light-blocking film is positioned between the photoelectric converter and the charge holding section, and has an opening through which the electric charge is allowed to pass. The second light-blocking film is positioned on an opposite side to the first light-blocking film as viewed from the photoelectric converter. Here, all of the second light-blocking films of the two or more respective image-plane phase-difference detection pixels are provided in respective first regions, or are provided in respective second regions. The first regions each include an overlapping region that is a region overlapping the opening in a pixel region occupied by the photoelectric converter. The second regions are each a region other than the first region in the pixel region.
1. An imaging unit, comprising:
two or more image-plane phase-difference detection pixels each including:
a semiconductor layer that includes a front surface and a back surface on an opposite side to the front surface,
a photoelectric converter that is in the semiconductor layer, and is configured to generate electric charge corresponding to a light reception amount by photoelectric conversion,
a charge holding section that is between the front surface and the photoelectric converter in the semiconductor layer, and is configured to hold the electric charge,
a first light-blocking film that is positioned between the photoelectric converter and the charge holding section, and has an opening through which the electric charge is allowed to pass, and
a second light-blocking film that is positioned on an opposite side to the first light-blocking film as viewed from the photoelectric converter, wherein
the second light-blocking film of each of the two or more image-plane phase-difference detection pixels are in respective first regions, or are in respective second regions, the first regions each including an overlapping region that is a region overlapping the opening in a pixel region occupied by the photoelectric converter, the second regions being a region other than the first regions in the pixel region.
2. The imaging unit according to claim 1 , wherein
the pixel region includes a first sub-pixel region and a second sub-pixel region that are adjacent to each other in a first direction in a divided manner, and
the two or more image-plane phase-difference detection pixels include
a first image-plane phase-difference detection pixel that includes the second light-blocking film in the first sub-pixel region, and
a second image-plane phase-difference detection pixel that includes the second light-blocking film in the second sub-pixel region.
3. The imaging unit according to claim 1 , further comprising a charge transfer section that includes a vertical trench gate extending from a front surface side toward the charge holding section through the opening.
4. The imaging unit according to claim 1 , wherein the opening is at a position other than center in the pixel region.
5. The imaging unit according to claim 1 , further comprising
two or more imaging pixels that are arranged in a first direction and a second direction, wherein
the two or more image-plane phase-difference detection pixels are disposed among the two or more imaging pixels in each of the first direction and the second direction.
6. The imaging unit according to claim 5 , wherein
the two or more imaging pixels further include two or more first to third imaging pixels, the first to the third imaging pixels respectively including first to third color filters, the first to the third imaging pixels being cyclically arranged in each of the first direction and the second direction, and
the image-plane phase-difference detection pixels are each disposed at any of two or more first positions to replace any one of the two or more first imaging pixels, the two or more first positions being positions at which the two or more respective first imaging pixels are to be disposed.
7. An electronic apparatus comprising an imaging unit,
the imaging unit including
two or more image-plane phase-difference detection pixels, wherein each of the two or more image-plane phase-difference detection pixels includes:
a semiconductor layer that includes a front surface and a back surface on an opposite side to the front surface,
a photoelectric converter that is in the semiconductor layer, and is configured to generate electric charge corresponding to a light reception amount by photoelectric conversion,
a charge holding section that is between the front surface and the photoelectric converter in the semiconductor layer, and is configured to hold the electric charge,
a first light-blocking film that is positioned between the photoelectric converter and the charge holding section, and has an opening through which the electric charge is allowed to pass, and
a second light-blocking film that is positioned on an opposite side to the first light-blocking film as viewed from the photoelectric converter, wherein
the second light-blocking film of each of the two or more image-plane phase-difference detection pixels are in respective first regions, or are in respective second regions, the first regions each including an overlapping region that is a region overlapping the opening in a pixel region occupied by the photoelectric converter, the second regions being a region other than the first regions in the pixel region.