IP Library › Granted Patent US 12,015,390
Granted Patent B2
US 12,015,390 · App. 17/438,878 · Granted Jun 18, 2024

Bulk acoustic wave resonator

Inventors: Jianmin Miao (Shanghai, CN); Ruizhen Zhang (Shanghai, CN)
Assignee: MG MICROELECTRONICS CO., LTD.
H03H9/02015H03H9/00H03H9/02007H03H9/13H03H9/171
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Quick Facts
Patent No.
US 12,015,390
App. No.
17/438,878
Granted
Jun 18, 2024
Kind
B2
Abstract

Provided is a bulk acoustic wave resonator. The bulk acoustic wave resonator includes an upper electrode, a piezoelectric layer and a lower electrode. The piezoelectric layer is disposed between the upper electrode and the lower electrode. At least one boundary of an orthogonal projection of the piezoelectric layer on the lower electrode includes a plurality of sawtooth structures.

Claims (11)

1. A bulk acoustic wave resonator, comprising: an upper electrode, a piezoelectric layer and a lower electrode, wherein

the piezoelectric layer is disposed between the upper electrode and the lower electrode; and

at least one boundary of an orthogonal projection of the piezoelectric layer on the lower electrode comprises a plurality of sawtooth structures;

wherein a center-to-center distance of adjacent sawtooth structures among the plurality of sawtooth structures is greater than or equal to 2 micrometers.

2. The bulk acoustic wave resonator according to claim 1 , wherein at least one boundary of orthogonal projections of the upper electrode and the lower electrode on a plane perpendicular to a thickness direction of the bulk acoustic wave resonator comprises a plurality of sawtooth structures.

3. The bulk acoustic wave resonator according to claim 1 , wherein a material of the piezoelectric layer is one of lead zirconate titanate piezoelectric ceramics, zinc oxide or aluminum nitride.

4. The bulk acoustic wave resonator according to claim 1 , wherein the at least one edge of the orthogonal projection of the piezoelectric layer on the lower electrode comprises a plurality of edges, each of the plurality of edges of the piezoelectric layer on the lower electrode comprises a plurality of sawtooth structures.

5. The bulk acoustic wave resonator according to claim 4 , wherein the plurality of sawtooth structures of each of the plurality of edges of the piezoelectric layer on the lower electrode are sequentially connected end to end on each of the plurality of edges.

6. The bulk acoustic wave resonator according to claim 1 , wherein a shape of the plurality of sawtooth structures comprises a triangle or a trapezoid.

7. The bulk acoustic wave resonator according to claim 1 , wherein a shape of an orthogonal projection of the bulk acoustic wave resonator on a plane perpendicular to a thickness direction of the bulk acoustic wave resonator comprises a polygon.

8. The bulk acoustic wave resonator according to claim 1 , wherein a material of the upper electrode and a material of the lower electrode is one of gold, molybdenum, aluminum, chromium or nickel.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 18, 2024
From: MG MICROELECTRONICS CO., LTD
To: SV SENSTECH (WUXI) CO., LTD.
Reel/Frame 068945/0399 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 5, 2023
From: MIAO, JIANMIN; ZHANG, RUIZHEN
To: MG MICROELECTRONICS CO., LTD.
Reel/Frame 063548/0969 →
Priority Claims (1)
CN 201921973912.1 · Nov 12, 2019 · national
Continuity (1)
Related Publication 20220158607A1 · May 19, 2022