Semiconductor wafer, radiation detection element, radiation detector, and production method for compound semiconductor monocrystalline substrate
Provided is a stable CdZnTe monocrystalline substrate having a small leakage current even when a high voltage is applied and having a lower variation in resistivity with respect to variations in applied voltage values. A semiconductor wafer comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at % or more and 6.5 at % or less and a chlorine concentration of 0.1 ppm by mass or more and 5.0 ppm by mass or less, wherein the semiconductor wafer has a resistivity of 1.0×10 7 Ωcm or more and 1.0×10 8 Ωcm or less when a voltage of 900 V is applied, and wherein a ratio (variation ratio) of the resistivity at application of 0 V to the resistivity at application of a voltage of 900 V is 20% or less.
1. A semiconductor wafer comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at % or more and 6.5 at % or less and a chlorine concentration of 0.1 ppm by mass or more and 5.0 ppm by mass or less,
wherein the semiconductor wafer has a resistivity of 1.0×10 7 Ωcm or more and 1.0×10 8 Ωcm or less when a voltage of 900 V is applied, and wherein a ratio (variation ratio) of the resistivity at application of 0 V to the resistivity at application of a voltage of 900 V is 20% or less.
2. A radiation detection element, comprising:
a substrate cut out from the semiconductor wafer according to claim 1 such that a main surface is rectangular;
a common electrode formed on one main surface of the substrate; and
a plurality of pixel electrodes formed in matrix on the other main surface of the substrate.
3. The radiation detection element according to claim 2 , wherein the radiation detection element has a resistivity of 1.0×10 7 Ωcm or more and 1.0×10 8 Ωcm or less when a voltage of 900 V is applied, and wherein a ratio (variation ratio) of the resistivity at application of 0 V to the resistivity at application of a voltage of 900 V is 20% or less.
4. A radiation detector, comprising:
the radiation detection element according to claim 2 ;
a power source for applying a bias voltage to the radiation detection element, the power source being connected to the radiation detection element; and
an amplification unit for amplifying an electric signal output from the radiation detection element, the amplification unit being connected to the radiation detection element.
5. A method for producing a compound semiconductor monocrystalline substrate, the substrate comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at % or more and 6.5 at % or less and a chlorine concentration of 0.1 ppm by mass or more and 5.0 ppm by mass or less, the substrate having a resistivity of 1.0×10 7 Ωcm or more and 1.0×10 8 Ωcm or less when a voltage of 900 V is applied,
wherein the method comprises:
a crystal growth step of a monocrystal in a furnace; and
after the crystal growth step of the monocrystal is completed, a step of subjecting the monocrystal to a heat treatment for 50 to 90 hours under conditions where a temperature of a monocrystal placing position in the furnace is 385 to 400° C. and a temperature of a Cd reservoir portion is room temperature without opening an ampule in the furnace, and slicing a heated monocrystal ingot into a wafer to form a substrate.