Semiconductor wafer, radiation detection element, radiation detector, and production method for compound semiconductor monocrystalline substrate
Provided is a CdZnTe monocrystalline substrate which has a small leakage current even when a voltage is applied from a low voltage to a high voltage, and which has a lower variation in resistivity with respect to applied voltage changes from 0 to 900 V, and which can maintain a stable resistivity. A semiconductor wafer comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at % or more and 6.5 at % or less and a chlorine concentration of 0.1 ppm by weight or more and 5.0 ppm by weight or less, wherein when a voltage is applied in a range of from 0 to 900 V, the semiconductor wafer has a resistivity for each applied voltage value of 1.0×10 7 Ωcm or more and 7.0×10 8 Ωcm or less, and wherein a relative variation coefficient of each resistivity to the applied voltages in a range of from 0 to 900 V is 100% or less.
1. A semiconductor wafer comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at % or more and 6.5 at % or less and a chlorine concentration of 0.1 ppm by weight or more and 5.0 ppm by weight or less,
wherein when a voltage is applied in a range of from 0 to 900 V, the semiconductor wafer has a resistivity for each applied voltage value of 1.0×10 7 Ωcm or more and 7.0×10 8 Ωcm or less, and
wherein a relative variation coefficient of each resistivity to the applied voltages in a range of from 0 to 900 V is 100% or less.
2. A radiation detection element, comprising:
a substrate cut out from the semiconductor wafer according to claim 1 such that a main surface is rectangular;
a common electrode formed on one main surface of the substrate; and
a plurality of pixel electrodes formed in matrix on the other main surface of the substrate.
3. The radiation detection element according to claim 2 ,
wherein, when a voltage is applied in a range of from 0 to 900 V, a resistivity for each applied voltage value is 1.0×10 7 Ωcm or more and 7.0×10 8 Ωcm or less, and
wherein a relative variation coefficient of each resistivity to the applied voltages in the range of from 0 to 900 V is 100% or less.
4. A radiation detector, comprising:
the radiation detection element according to claim 2 ;
a power source for applying a bias voltage to the radiation detection element, the power source being connected to the radiation detection element; and
an amplification unit for amplifying an electric signal output from the radiation detection element, the amplification unit being connected to the radiation detection element.
5. A method for producing a compound semiconductor monocrystalline substrate, the substrate comprising a cadmium zinc telluride monocrystal having a zinc concentration of 4.0 at % or more and 6.5 at % or less and a chlorine concentration of 0.1 ppm by weight or more and 5.0 ppm by weight or less,
wherein when a voltage is applied in a range of from 0 to 900 V, the substrate has a resistivity for each applied voltage value of 1.0×10 7 Ωcm or more and 7.0×10 8 Ωcm or less,
wherein a relative variation coefficient of each resistivity to the applied voltages in a range of from 0 to 900 V is 100% or less, and
wherein the method comprises:
a crystal growth step of a monocrystal in a furnace; and
after the crystal growth step of the monocrystal is completed, a step of subjecting the monocrystal to a heat treatment for 50 to 90 hours under conditions where a temperature of a monocrystal placing position in the furnace is 385 to 400° C. and a temperature of a Cd reservoir portion is room temperature without opening an ampule in the furnace, and slicing a heated monocrystal ingot into a wafer to form a substrate.