GLASS CERAMICS, CHEMICALLY STRENGTHENED GLASS, AND SEMICONDUCTOR SUBSTRATE
The present invention relates to a glass ceramic having a visible-light transmittance of 85% or more in terms of a thickness of 0.7 mm, and a haze value of 1.0% or less in terms of a thickness of 0.7 mm, and including, in mass % on an oxide basis: 45-70% of SiO 2 ; 1-15% of Al 2 O 3 ; and 10-25% of Li 2 O.
1 . A glass ceramic having a visible-light transmittance of 85% or more in terms of a thickness of 0.7 mm, and a haze value of 1.0% or less in terms of a thickness of 0.7 mm, and
comprising, in mass % on an oxide basis:
45-70% of SiO 2 ;
1-15% of Al 2 O 3 ; and
10-25% of Li 2 O.
2 . The glass ceramic according to claim 1 , having a content of K 2 O of 5% or less in mass % on an oxide basis.
3 . The glass ceramic according to claim 1 , comprising lithium metasilicate crystals.
4 . The glass ceramic according to claim 1 , comprising lithiumphosphate crystals.
5 . The glass ceramic according to claim 3 , wherein, in a case where lithium disilicate crystals are contained, the lithium disilicate crystals have a crystal size of 45 nm or less, the crystal size being determined using Scherrer equation from a width of an X-ray diffraction peak of the lithium disilicate crystals.
6 . The glass ceramic according to claim 1 , having a glass transition point that differs by 200° C. or less from a glass transition point of an amorphous glass having the same glass composition as a glass composition of the glass ceramic.
7 . The glass ceramic according to claim 1 , wherein the haze value is 0.4% or less in terms of a thickness of 0.7 mm.
8 . A semiconductor-supporting substrate comprising the glass ceramic according to claim 1 .
9 . A chemically strengthened glass having a compressive stress layer in a surface thereof, the chemically strengthened glass being a glass ceramic that has a visible-light transmittance of 85% or more in terms of a thickness of 0.7 mm, and a haze value of 0.5% or less in terms of a thickness of 0.7 mm,
has a surface compressive stress value of 500 MPa or more and a depth of the compressive stress layer of 80 μm or more, and
comprises, in mass % on an oxide basis:
45-70% of SiO 2 ;
1-15% of Al 2 O 3 ; and
10-25% of Li 2 O.
10 . The chemically strengthened glass according to claim 9 , comprising lithium metasilicate crystals.
11 . The chemically strengthened glass according to claim 10 , comprising lithiumphosphate crystals.
12 . The chemically strengthened glass according to claim 9 , having a compressive stress value of 100 MPa or more at a depth of 50 m from the surface.
13 . The chemically strengthened glass according to claim 9 , having an average thermal expansion coefficient at 50° C.-350° C. of 90×10 −7 /° C.-140×10 −7 /° C.
14 . The chemically strengthened glass according to claim 9 , having a Vickers hardness of 600 or more.
15 . A semiconductor-supporting substrate comprising the chemically strengthened glass according to claim 9 .
16 . An electronic appliance comprising the chemically strengthened glass according to claim 9 .