Method for reticle enhancement technology of a design pattern to be manufactured on a substrate
Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include inputting a desired pattern to be formed on a substrate; determining an initial mask pattern from the desired pattern for the substrate; optimizing the initial mask pattern for wafer quality using a VSB exposure system; and outputting the optimized mask pattern. Methods for fracturing a pattern to be exposed on a surface using VSB lithography include inputting an initial pattern; overlaying the initial pattern with a two-dimensional grid, wherein an initial set of VSB shots are formed by the union of the initial pattern with locations on the grid; merging two or more adjacent shots in the initial set of VSB shots to create a larger shot in a modified set of VSB shots; and outputting the modified set of VSB shots.
1. A method for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography, the method comprising:
inputting a desired pattern to be formed on a substrate;
determining an initial mask pattern from the desired pattern for the substrate;
optimizing the initial mask pattern for wafer quality using a VSB exposure system, thereby creating an optimized mask pattern, wherein the optimizing comprises:
determining an initial set of VSB shots that will form the initial mask pattern;
calculating a simulated mask pattern from the initial set of VSB shots using charged particle beam simulation and a simple mask model; and
adjusting the initial set of VSB shots or the initial mask pattern, thereby creating the optimized mask pattern, wherein the adjusting of the initial set of VSB shots creates an adjusted set of VSB shots;
calculating a first substrate pattern from the initial mask pattern; and calculating a second substrate pattern from the simulated mask pattern; and
outputting the optimized mask pattern and the adjusted set of VSB shots.
2. The method of claim 1 , wherein calculating the first substrate pattern and the second substrate pattern comprise lithography simulation.
3. The method of claim 2 , wherein optimizing the initial mask pattern further comprises comparing the first substrate pattern with the second substrate pattern.
4. The method of claim 3 , wherein optimizing the initial mask pattern further comprises resizing or moving one or more shots in the adjusted set of VSB shots, thereby forming an optimized set of shots.
5. The method of claim 4 , further comprising using the simple mask model to calculate the optimized mask pattern with the optimized set of shots using the charged particle beam simulation.