Guard ring and manufacturing method thereof

1. An electronic device, comprising:

a first conductive structure that extends through a first dielectric structure of the electronic device and into a substrate of the electronic device;

a guard ring, having multiple layers, that extends along one or more sides of a first vertical portion of the first conductive structure; and

a second conductive structure, between the substrate and the guard ring, that extends along a second vertical portion of the first conductive structure,

wherein a layer of the multiple layers of the guard ring that is nearest to the second conductive structure includes a guard ring side surface, which is farthest from a side surface of the first conductive structure, that is a first distance from the side surface of the first conductive structure,

wherein the second conductive structure includes a conductive structure side surface, which is nearest to the side surface of the first conductive structure, that is a second distance from the side surface of the first conductive structure, and

wherein the second distance is greater than or equal to the first distance.

2. The electronic device of claim 1 , wherein the first conductive structure comprises one or more of:

a through oxide via, or

a through silicon via.

3. The electronic device of claim 1 , wherein the guard ring surrounds, at least partially, the first conductive structure.

4. The electronic device of claim 1 , wherein the second conductive structure is disposed within a dielectric structure.

5. The electronic device of claim 1 , wherein the first dielectric structure comprises one or more of:

an inter-metal dielectric structure, or

an inter-layer dielectric structure.

6. The electronic device of claim 1 , wherein the second distance is greater than or equal to approximately 5% of a width of the first conductive structure.

7. The electronic device of claim 1 , wherein a farthest guard ring side surface, that is a largest distance from the first conductive structure, is a third distance from the side surface of the first conductive structure, and

wherein the second distance is greater than or equal to the third distance.

8. The electronic device of claim 7 , wherein the second distance is greater than the third distance by greater than or equal to approximately 1% of a width of the first conductive structure.

9. The electronic device of claim 1 , wherein the first vertical portion of the first conductive structure is non-overlapping with the second vertical portion of the first conductive structure.

10. The electronic device of claim 1 , wherein the second distance is greater than the first distance by at least 1% of a width of the first conductive structure.

11. The electronic device of claim 1 , further comprising a third conductive structure that extends along at least a part of the first vertical portion of the electronic device to a fourth conductive structure,

wherein the guard ring is disposed between the third conductive structure and the first conductive structure, and

wherein a third distance between the guard ring and the third conductive structure is greater than or equal to approximately 1% of a width of the first conductive structure.

12. The electronic device of claim 1 , wherein the second conductive structure comprises one or more of:

an element of a fin field effect transistor,

an active area of a semiconductor device,

a polysilicon material,

a gate,

a metal connector,

a bitline, or

a metal source/drain.

13. An electronic device, comprising:

a first conductive structure that extends through a dielectric structure of the electronic device and into a substrate of the electronic device;

a guard ring, having multiple layers, that extends along one or more sides of a first vertical portion of the first conductive structure; and

a second conductive structure that extends along a second vertical portion of the first conductive structure,

wherein the second conductive structure includes a side surface, which is nearest to a side surface of the first conductive structure, that is a distance from the side surface of the first conductive structure, and

wherein the distance is greater than or equal to approximately 5% of a width of the first conductive structure.

14. The electronic device of claim 13 , wherein the distance is greater than or equal to approximately 0.1 micrometers.

15. The electronic device of claim 13 , wherein the guard ring is insulated from the substrate by a dielectric layer that extends from the side surface of the second conductive structure to the side surface of the first conductive structure.

16. The electronic device of claim 13 , further comprising a third conductive structure that extends along at least a part of the first vertical portion of the electronic device to a fourth conductive structure,

wherein the guard ring is disposed between the third conductive structure and the first conductive structure, and

wherein a third distance between the guard ring and the third conductive structure is greater than or equal to approximately 1% of a width of the first conductive structure.

17. The electronic device of claim 13 , wherein the first conductive structure has an elliptical shaped cross-section, and

wherein the guard ring surrounds, at least partially, the first conductive structure along the first vertical portion of the first conductive structure.

18. A method, comprising:

forming a guard ring, having multiple layers, within a first vertical portion of an electronic device;

forming a first conductive structure that extends along at least a part of the first vertical portion of the electronic device; and

forming a second conductive structure of the electronic device, the second conductive structure extending through the first vertical portion of the electronic device and into a substrate of the electronic device,

wherein the guard ring is disposed between the first conductive structure and the second conductive structure,

wherein the guard ring includes a guard ring side surface, which is farthest from a side surface of the second conductive structure, that is a first distance from the side surface of the second conductive structure,

wherein the first conductive structure includes a conductive structure side surface, which is nearest to the side surface of the second conductive structure, that is a second distance from the side surface of the second conductive structure, and

wherein the second distance is greater than the first distance by at least 1% of a width of the second conductive structure.

19. The method of claim 18 , further comprising forming a third conductive structure that extends along a second vertical portion of the electronic device that is different from the first vertical portion of the electronic device,

wherein a layer of the multiple layers of the guard ring that is nearest to the third conductive structure includes an additional guard ring side surface, which is farthest from a side side surface of the second conductive structure, that is a third distance from the side surface of the second conductive structure,

wherein the third conductive structure includes a side surface, which is nearest to the side surface of the second conductive structure, that is a fourth distance from the side surface of the second conductive structure, and

wherein the fourth distance is greater than or equal to the third distance.

20. The method of claim 18 , wherein the second conductive structure comprises one or more of:

a through oxide via, or

a through silicon via.