Semiconductor device and method of controlling warpage during LAB
A semiconductor device has a semiconductor die and a support tape disposed over a back surface of the semiconductor die opposite an active surface of the semiconductor die. A portion of the back surface of the semiconductor wafer is removed to reduce its thickness. The semiconductor die is part of a semiconductor wafer, and the wafer is singulated to provide the semiconductor die with the support tape disposed on the back surface of the semiconductor die. The support tape can be a polyimide tape. A dicing tape is disposed over the support tape. The semiconductor die is disposed over a substrate. A laser emission is projected onto the semiconductor die to bond the semiconductor die to the substrate. The support tape provides stress relief to avoid warpage of the semiconductor die during the laser emission. The support tape is removed from the back surface of the semiconductor die.
1. A method of making a semiconductor device, comprising:
providing a semiconductor die;
disposing a first support tape over a back surface of the semiconductor die opposite an active surface of the semiconductor die, wherein the first support tape includes a polyimide tape;
providing a substrate;
disposing the semiconductor die on the substrate; and
projecting a laser emission onto the semiconductor die to bond the semiconductor die to the substrate while retaining the first support tape disposed on the semiconductor die to provide stress relief to avoid warpage of the semiconductor die during the laser emission.
2. The method of claim 1 , wherein the semiconductor die is contained within a semiconductor wafer.
3. The method of claim 2 , further including singulating the semiconductor wafer to provide the semiconductor die with the first support layer disposed on the back surface of the semiconductor die.
4. The method of claim 1 , further including disposing a second support tape over the first support tape.
5. A method of making a semiconductor device, comprising:
providing an electrical component;
disposing a first support tape over a surface of the electrical component;
projecting a laser emission onto the electrical component while retaining the first support tape disposed on the surface of the electrical component to reduce warpage of the electrical component during the laser emission; and
removing a portion of the surface of the electrical component to reduce a thickness of the electrical component.
6. The method of claim 5 , wherein the electrical component is contained within a semiconductor wafer.
7. The method of claim 6 , further including singulating the semiconductor wafer to provide the electrical component with the first support layer disposed on the surface of the electrical component.
8. The method of claim 5 , further including:
providing a substrate;
disposing the electrical component over the substrate; and
projecting the laser emission onto the electrical component to bond the electrical component to the substrate.
9. The method of claim 5 , further including disposing a second support tape over the first support tape.
10. A method of making a semiconductor device, comprising:
providing an electrical component;
disposing a first support tape over a surface of the electrical component, wherein the first support tape includes a polyimide tape; and
projecting a laser emission onto the electrical component while retaining the first support tape disposed on the surface of the electrical component to reduce warpage of the electrical component during the laser emission.
11. A semiconductor device, comprising:
a semiconductor die;
a support tape disposed over a back surface of the semiconductor die opposite an active surface of the semiconductor die, wherein the support tape includes a polyimide tape; and
a laser emission projected onto the semiconductor die while retaining the support tape to provide stress relief to avoid warpage of the semiconductor die during the laser emission.
12. The semiconductor device of claim 11 , wherein the semiconductor die is contained within a semiconductor wafer.
13. The semiconductor device of claim 12 , wherein the semiconductor wafer is singulated to provide the semiconductor die with the support layer disposed on the back surface of the semiconductor die.
14. The semiconductor device of claim 11 , further including a substrate, wherein the semiconductor die is disposed over the substrate and the laser emission is projected onto the semiconductor die to bond the semiconductor die to the substrate.
15. The semiconductor device of claim 11 , further including a dicing tape disposed over the support tape.
16. A semiconductor device, comprising:
an electrical component;
a support tape disposed over a surface of the electrical component, wherein the support tape includes a polyimide tape; and
a laser emission projected onto the electrical component while retaining the support tape to reduce warpage of the electrical component during the laser emission.
17. The semiconductor device of claim 16 , wherein the electrical component is contained within a semiconductor wafer.
18. The semiconductor device of claim 17 , wherein the semiconductor wafer is singulated to provide the electrical component with the support layer disposed on the surface of the electrical component.
19. The semiconductor device of claim 16 , further including a substrate, wherein the electrical component is disposed over the substrate and the laser emission is projected onto the electrical component to bond the electrical component to the substrate.
20. The semiconductor device of claim 16 , further including a dicing tape disposed over the support tape.