Vertical cavity surface emitting laser device with at least one bonding layer
In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate; a first mirror disposed over the substrate; a bonding layer disposed over the first mirror; and an active region disposed over the bonding layer. The substrate is a gallium arsenide (GaAs) substrate, and the active region is an indium phosphide (InP)-based active region.
1. A vertical cavity surface emitting laser (VCSEL) device, comprising:
a substrate;
a first mirror disposed over the substrate;
a bonding layer disposed over the first mirror;
a first n-type layer disposed directly over the bonding layer;
an active region disposed directly over the first n-type layer, wherein:
the substrate is a gallium arsenide (GaAs) substrate, and
the active region is an indium phosphide (InP)-based active region;
a p-type layer disposed directly over the active region;
a second n-type layer disposed over the active region;
a tunnel junction disposed between the second n-type layer and the active region,
wherein the tunnel junction overlaps a portion of the p-type layer and a portion of the second n-type layer;
a second mirror disposed over the second n-type layer;
a set of first contacts below the tunnel junction; and
a set of second contacts disposed on the second n-type layer and adjacent to the second mirror.
2. The VCSEL device of claim 1 , wherein the VCSEL device is configured to emit an output beam,
wherein a wavelength of the output beam is in a range of 1200-1600 nanometers.
3. The VCSEL device of claim 1 , wherein the VCSEL device comprises at least one of:
a short-wave infrared (SWIR) VCSEL device;
an oxide confined VCSEL device;
an implant confined VCSEL device;
a mesa confined VCSEL device;
a top emitting VCSEL device; or
a bottom emitting VCSEL device.
4. The VCSEL device of claim 1 , wherein the bonding layer comprises at least one of:
an SU-8 photoresist polymer;
a benzocyclobutene (BCB) polymer;
a metal material; or
a silicon dioxide (SiO 2 ) material.
5. The VCSEL device of claim 1 , wherein a thickness of the bonding layer is between 10 nanometers and 1.6 micrometers.
6. The VCSEL device of claim 1 , further comprising:
one or more additional layers disposed over the active region;
an additional bonding layer disposed over the one or more additional layers; and
a second mirror disposed over the additional bonding layer.
7. The VCSEL device of claim 1 , further comprising:
one or more vias formed in the substrate, the first mirror, and the bonding layer,
wherein the set of first contacts is disposed within an interior portion of the one or more vias, and
wherein the set of first contacts contact the substrate, the first mirror, the bonding layer, and the first n-type layer.
8. The VCSEL device of claim 1 , further comprising:
a metal layer disposed over the substrate, wherein:
the first mirror is disposed on a surface of the substrate, and
the metal layer is disposed on a different surface of the substrate.
9. The VCSEL device of claim 1 , further comprising:
one or more vias formed in a portion of the first mirror that does not overlap vertically with the second mirror.
10. A die, comprising:
a gallium arsenide (GaAs) substrate; and
a plurality of individual epitaxial structures disposed on the substrate,
wherein each epitaxial structure, of the plurality of individual epitaxial structures, comprises:
a first mirror disposed over the substrate;
a bonding layer disposed over the first mirror;
a first n-type layer disposed directly over the bonding layer;
an indium phosphide (InP)-based active region disposed directly over the first n-type layer;
a p-type layer disposed directly over the active region;
a second n-type layer disposed over the active region;
a tunnel junction disposed between the second n-type layer and the active region,
wherein the tunnel junction overlaps a portion of the p-type layer and a portion of the second n-type layer;
a second mirror disposed over the second n-type layer;
a set of first contacts below the tunnel junction; and
a set of second contacts on the second n-type layer adjacent to the second mirror.
11. The die of claim 10 , wherein the bonding layer comprises at least one of:
an SU-8 photoresist polymer;
a benzocyclobutene (BCB) polymer;
a metal material; or
a silicon dioxide (SiO 2 ) material.
12. The die of claim 10 , wherein the first mirror is a semiconductor distributed Bragg reflector (DBR) that comprises at least one of:
a set of alternating GaAs layers and aluminum gallium arsenide (AlGaAs) layers, or
a set of alternating AlGaAs layers with different percentages of Al.
13. The die of claim 10 , wherein the active region includes at least one of:
at least one InP-based quantum well; or
at least one InP-based quantum dot layer.
14. The die of claim 10 , further comprising:
a metal layer disposed on the substrate, wherein:
the plurality of individual epitaxial structures are disposed on a surface of the substrate, and
the metal layer is disposed on a different surface of the substrate.
15. The die of claim 10 , wherein the epitaxial structure further comprises:
one or more vias formed in the first mirror and the bonding layer,
wherein the set of first contacts is disposed within an interior portion of the one or more vias, and
wherein the set of first contacts contact the substrate, the first mirror, the bonding layer, and the first n-type layer.
16. A method of forming a vertical cavity surface emitting laser (VCSEL) device, comprising:
forming a first epitaxial substructure on a gallium arsenide (GaAs) substrate;
forming a second epitaxial substructure on an indium phosphide (InP) substrate;
attaching, using a bonding layer, the first epitaxial substructure to the second epitaxial substructure to form an epitaxial structure; and
removing the InP substrate from the epitaxial structure,
wherein the VCSEL device comprises:
a first mirror disposed over the GaAS substrate;
the bonding layer disposed over the first mirror;
a first n-type layer disposed directly over the bonding layer;
an active region disposed directly over the first n-type layer;
a p-type layer disposed directly over the active region;
a second n-type layer disposed over the active region;
a tunnel junction disposed between the second n-type layer and the active region,
wherein the tunnel junction overlaps a portion of the p-type layer and a portion of the second n-type layer;
a second mirror disposed over the second n-type layer;
a set of first contacts below the tunnel junction; and
a set of second contacts disposed on the second n-type layer and adjacent to the second mirror.
17. The method of claim 16 , wherein:
the first epitaxial substructure includes the first mirror; and
the second epitaxial substructure includes the active region that is an InP-based active region.
18. The method of claim 16 , wherein attaching the first epitaxial substructure to the second epitaxial substructure to form the epitaxial structure comprises:
forming the bonding layer on a surface of the first epitaxial substructure; and
disposing a surface of the second epitaxial substructure on the surface of the first epitaxial substructure.
19. The method of claim 16 , further comprising:
forming, after removing the InP substrate from the epitaxial structure, an additional bonding layer on a surface of the epitaxial structure; and
forming the second mirror on a surface of the additional bonding layer.
20. The method of claim 16 , wherein the VCSEL device further comprises:
one or more vias formed in the first mirror and the bonding layer,
wherein the set of first contacts is disposed within an interior portion of the one or more vias, and
wherein the set of first contacts contact the GaAS substrate, the first mirror, the bonding layer, and the first n-type layer.