SELECTIVE DEPOSITION ON METAL OR METALLIC SURFACES RELATIVE TO DIELECTRIC SURFACES
Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.
1 . A method for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second dielectric surface of the substrate, the method comprising one or more deposition cycles comprising:
contacting the substrate with a first vapor-phase precursor comprising a metal halide; and
contacting the substrate with a second vapor-phase precursor comprising a silane;
wherein the material is deposited on the first metal or metallic surface relative to the second dielectric surface with a selectivity of above about 50%.
2 . The method of claim 1 , wherein the metal halide is selected from fluorides or chlorides of Nb, Ta, Mo, W, V and Cr.
3 . The method of claim 1 , wherein the first precursor is selected from NbCl 5 , NbF 5 , TaCl 5 , TaF 5 , MoF x , MoCl x , VF x , VCl x , and CrF x , where x is an integer.
4 . The method of claim 3 , wherein the first precursor is selected from NbCl 5 , NbF 5 , TaCl 5 , and TaF 5 .
5 . The method of claim 1 , wherein the second dielectric surface comprises Si—O bonds.
6 . The method of claim 1 , wherein the second dielectric surface comprises a non-conductive surface.
7 . The method of claim 1 , wherein the deposition cycle is repeated until a desired thickness of material is deposited on the first metal or metallic surface.
8 . The method of claim 1 , wherein the substrate is contacted with the first vapor-phase precursor comprising a metal halide at a temperature equal to or above about 225° C.
9 . The method of claim 1 , wherein the silane is selected from monosilane, disilane, and trisilane.
10 . The method of claim 1 , wherein the silane is an alkylsilane.
11 . The method of claim 10 , wherein the silane is diethylsilane.
12 . The method of claim 1 , wherein the second vapor-phase precursor does not comprise plasma.
13 . The method of claim 1 , wherein the material is a metal silicide.
14 . The method of claim 13 , additionally comprising treating the metal silicide to form a metal silicate.
15 . The method of claim 14 , wherein treating the metal silicide comprises contacting the metal silicide with a reactant comprising oxygen.
16 . The method of claim 15 , wherein the reactant comprising oxygen comprises water, ozone, oxygen atoms, oxygen radicals or oxygen plasma.
17 . The method of claim 13 , wherein the material is not tungsten silicide.
18 . The method of claim 13 , wherein the metal silicide is deposited on the first metal or metallic surface relative to the second dielectric surface with a selectivity of above about 95%.
19 . The method of claim 1 , wherein the material is a metal carbide.
20 . The method of claim 1 , wherein the substrate is contacted with the first vapor-phase precursor comprising a metal halide at a temperature equal to or above about 250° C. and the material is deposited on the first metal or metallic surface relative to the second dielectric surface with a selectivity of above about 95%.