Semiconductor device and method of forming embedded die substrate, and system-in-package modules with the same
A semiconductor device has a first substrate. A first semiconductor component is disposed on a first surface of the first substrate. A second substrate includes a vertical interconnect structure on a first surface of the second substrate. A second semiconductor component is disposed on the first surface of the second substrate. The first semiconductor component or second semiconductor component is a semiconductor package. The first substrate is disposed over the second substrate with the first semiconductor component and second semiconductor component between the first substrate and second substrate. A first encapsulant is deposited between the first substrate and second substrate. A SiP submodule is disposed over the first substrate or second substrate opposite the encapsulant. A shielding layer is formed over the SiP submodule.
1. A method of making a semiconductor device, comprising:
providing a first substrate with a first semiconductor component mounted to the first substrate;
disposing a second substrate over the first substrate with a second semiconductor component mounted to the second substrate;
depositing a first encapsulant between the first substrate and second substrate over the first semiconductor component and second semiconductor component;
disposing a vertical interconnect structure over the first substrate opposite the first encapsulant;
depositing a second encapsulant over the first substrate and vertical interconnect structure; and
forming a groove in the second encapsulant around the vertical interconnect structure.
2. The method of claim 1 , further including disposing a second vertical interconnect structure between the first substrate and second substrate.
3. The method of claim 1 , further including disposing a third semiconductor component over the first substrate in the second encapsulant.
4. The method of claim 1 , further including disposing a SiP submodule over the second substrate opposite the second semiconductor component.
5. The method of claim 1 , further including disposing a solder bump in the groove.
6. The method of claim 1 , wherein the first semiconductor component includes a shielding layer.
7. A method of making a semiconductor device, comprising:
providing a first substrate and second substrate;
disposing a first semiconductor component between the first substrate and second substrate;
depositing a first encapsulant between the first substrate and second substrate; and
depositing a second encapsulant over the first substrate with the first substrate disposed between the first encapsulant and second encapsulant.
8. The method of claim 7 , further including disposing a vertical interconnect structure between the first substrate and second substrate.
9. The method of claim 7 , further including disposing a second semiconductor component over the first substrate in the second encapsulant.
10. The method of claim 7 , further including disposing a SiP submodule over the second substrate opposite the first semiconductor component.
11. The method of claim 7 , further including disposing a vertical interconnect structure in the second encapsulant.
12. The method of claim 11 , further including forming a groove in the second encapsulant around the vertical interconnect structure.
13. The method of claim 7 , wherein the first semiconductor component includes a shielding layer.
14. A method of making a semiconductor device, comprising:
providing a first substrate;
providing a second substrate;
disposing a first semiconductor component between the first substrate and second substrate;
depositing a first encapsulant between the first substrate and second substrate;
disposing a SiP submodule over the first substrate opposite the first encapsulant; and
disposing a second encapsulant over the second substrate opposite the first encapsulant.
15. The method of claim 14 , further including disposing a vertical interconnect structure between the first substrate and second substrate.
16. The method of claim 14 , further including disposing a second semiconductor component over the second substrate opposite the first encapsulant.
17. The method of claim 14 , further including:
disposing a vertical interconnect structure over the second substrate; and
depositing the second encapsulant over the vertical interconnect structure.
18. The method of claim 14 , wherein the first semiconductor component includes a shielding layer.
19. A method of making a semiconductor device, comprising:
providing a first substrate;
providing a second substrate;
disposing a first semiconductor component between the first substrate and second substrate;
depositing a first encapsulant between the first substrate and second substrate; and
depositing a second encapsulant over the first substrate.
20. The method of claim 19 , further including disposing a vertical interconnect structure between the first substrate and second substrate.
21. The method of claim 19 , further including:
disposing a second semiconductor component over the first substrate opposite the first semiconductor component; and
depositing the second encapsulant over the second semiconductor component.
22. The method of claim 19 , further including disposing a SiP submodule over the second substrate opposite the first semiconductor component.
23. The method of claim 22 , wherein the SiP submodule includes a vertical interconnect structure.
24. The method of claim 19 , wherein the first semiconductor component includes a shielding layer.