Three-dimensional device with vertical core and bundled wiring
A semiconductor device includes a buried power rail (BPR) over a substrate and a semiconductor structure over the BPR. The semiconductor structure is tube-shaped and extends along a vertical direction. The semiconductor structure includes a first source/drain (S/D) region over the BPR, a gate region over the first S/D region, and a second S/D region over the gate region. The semiconductor device includes a first S/D interconnect structure extending from the BPR and further into the semiconductor structure such that a top portion of the first S/D interconnect structure is surrounded by the first S/D region. The semiconductor device includes a gate structure that includes (i) a gate oxide formed along an inner surface of the gate region and (ii) a gate electrode formed along sidewalls of the gate oxide in the gate region. The semiconductor device includes a second S/D interconnect structure positioned over the second S/D region.
1. A semiconductor device, comprising:
a buried power rail (BPR) formed over a top surface of a substrate, the substrate including an opposing bottom surface;
a semiconductor structure formed over the BPR, the semiconductor structure being tube-shaped and extending along a vertical direction perpendicular to the substrate, the semiconductor structure further including a first source/drain (S/D) region over the BPR, a gate region over the first S/D region, and a second S/D region over the gate region;
a first S/D interconnect structure extending from the BPR and further into the semiconductor structure such that a top portion of the first S/D interconnect structure is surrounded by the first S/D region of the semiconductor structure;
a gate structure that includes (i) a gate oxide formed along an inner surface of the gate region and (ii) a gate electrode formed along sidewalls of the gate oxide in the gate region such that the gate electrode is surrounded by the gate region; and
a second S/D interconnect structure positioned over and coupled to the second S/D region.
2. The semiconductor device of claim 1 , wherein a cross-section of the semiconductor structure obtained along a direction parallel to the substrate includes one of a circular ring shape, a square ring shape, a rectangular ring shape, and an oval ring shape.
3. The semiconductor device of claim 1 , wherein:
the gate oxide is further formed along an inner surface of the second S/D region, and
the gate electrode includes a first portion arranged along the sidewalls of the gate oxide in the gate region and a second portion extending from the first portion and through the second S/D region such that a top surface of the second portion of the gate electrode is over a top surface of the second S/D region.
4. The semiconductor device of claim 3 , further comprising:
a first dielectric layer positioned in the first S/D region, the first dielectric layer further being arranged between the first S/D interconnect structure and the gate electrode and further surrounded by the first S/D region;
a second dielectric layer positioned over the first portion of the gate electrode and surrounding the second portion of the gate electrode, the second dielectric layer further being positioned between the gate oxide in the second S/D region and the second portion of the gate electrode; and
a gate interconnect contact positioned over and coupled to the second portion of the gate electrode.
5. The semiconductor device of claim 1 , further comprising:
a S/D contact positioned adjacent to the semiconductor structure and extending from the BPR in the vertical direction such that the first S/D interconnect structure is coupled to the S/D contact through the BPR.
6. The semiconductor device of claim 1 , further comprising:
a S/D contact extending through the substrate from the bottom surface of the substrate to contact the BPR, the first S/D interconnect structure being coupled to the S/D contact through the BPR.
7. A semiconductor device, comprising:
a buried power rail (BPR) formed over a top surface of a substrate, the substrate including an opposing bottom surface;
a semiconductor structure formed over the BPR, the semiconductor structure being tube-shaped and extending along a vertical direction perpendicular to the substrate, the semiconductor structure further including a first source/drain (S/D) region over the BPR, a gate region over the first S/D region, and a second S/D region over the gate region;
a first S/D interconnect structure extending from the BPR and further into the semiconductor structure such that a top portion of the first S/D interconnect structure is surrounded by the first S/D region of the semiconductor structure;
a first gate oxide formed along an inner surface of the gate region and an inner surface of the second S/D region, and a second gate oxide formed along an outer surface of the gate region and an outer surface of the second S/D region to surround the gate region and the second S/D region;
a first gate electrode formed along sidewalls of the first gate oxide in the gate region such that the first gate electrode is surrounded by the gate region, and a second gate electrode formed along sidewalls of the second gate oxide to surround the gate region; and
a second S/D interconnect structure positioned over and coupled to the second S/D region.
8. The semiconductor device of claim 7 , wherein a cross-section of the semiconductor structure obtained along a direction parallel to the substrate includes one of a circular ring shape, a square ring shape, a rectangular ring shape, and an oval ring shape.
9. The semiconductor device of claim 7 , further comprising:
a first dielectric layer including (i) a first portion positioned between the first S/D interconnect structure and the first gate electrode and surrounded by the first S/D region, and (ii) a second portion formed along an outer surface of the first S/D region so as to surround the first S/D region;
a first gate interconnect contact positioned over and coupled to the first gate electrode; and
a second gate interconnect contact positioned over and coupled to the second gate electrode.
10. The semiconductor device of claim 9 , wherein:
the first gate electrode includes a first portion arranged along the sidewalls of the first gate oxide in the gate region and a second portion extending from the first portion of the first gate electrode and through the second S/D region such that a top surface of the second portion of the first gate electrode is substantially level with a top surface of the second S/D region, and
the second gate electrode includes a first portion arrange along the sidewalls of the second gate oxide in the gate region and a second portion extending from the first portion of the second gate electrode in the vertical direction such that a top surface of the second portion of the second gate electrode is substantially level with the top surface of the second S/D region.
11. The semiconductor device of claim 10 , further comprising:
a second dielectric layer including (i) a first portion positioned over the first portion of the first gate electrode and surrounding the second portion of the first gate electrode, the first portion of the second dielectric layer being positioned between the first gate oxide in the second S/D region and the second portion of the first gate electrode, and (ii) a second portion positioned over the first portion of the second gate electrode and surrounded by the second portion of the second gate electrode, the second portion of the second dielectric layer further being positioned between the second portion of the second gate electrode and the second gate oxide in the second S/D region.
12. The semiconductor device of claim 7 , further comprising:
a S/D contact positioned adjacent to the semiconductor structure and extending from the BPR in the vertical direction such that the first S/D interconnect structure is coupled to the S/D contact through the BPR.
13. The semiconductor device of claim 7 , further comprising:
a S/D contact extending through the substrate from the bottom surface of the substrate to contact the BPR, the first S/D interconnect structure being coupled to the S/D contact through the BPR.
14. A method of manufacturing a semiconductor device, comprising:
forming a buried power rail (BPR) over a top surface of a substrate, the substrate including an opposing bottom surface;
forming a semiconductor structure over the BPR, the semiconductor structure being tube-shaped to include an inner surface and an outer surface, extending along a vertical direction perpendicular to the substrate, and including a first source/drain (S/D) region over the BPR, a gate region over the first S/D region, and a second S/D region over the gate region,
forming a first S/D interconnect structure extending from the BPR and further into the first S/D region of the semiconductor structure such that a top portion of the first S/D interconnect structure is surrounded by the first S/D region of the semiconductor structure;
forming a first dielectric layer over the first S/D interconnect structure in the first S/D region of the semiconductor structure such that the first dielectric layer is surrounded by the first S/D region of the semiconductor structure;
forming a first gate oxide along the inner surface of semiconductor structure and over the first dielectric layer;
forming a first gate electrode along sidewalls of the first gate oxide in the gate region of the semiconductor structure such that the first gate electrode is surrounded by the gate region; and
forming a second dielectric layer along the sidewalls of the first gate oxide and over the first gate electrode such that the second dielectric layer is surrounded by the second S/D region of the semiconductor structure.
15. The method of claim 14 , further comprising:
forming a second S/D interconnect structure that is positioned over and coupled to the second S/D region of the semiconductor structure; and
forming a first gate interconnect contact that is positioned over and coupled to the first gate electrode.
16. The method of claim 15 , wherein the forming the first dielectric layer further comprises:
forming the first dielectric layer further along the outer surface of the semiconductor structure so as to surround the first S/D region of the semiconductor structure.
17. The method of claim 16 , further comprising:
forming a second gate oxide along the outer surface of semiconductor structure and over the first dielectric layer; and
forming a second gate electrode along sidewalls of the second gate oxide to surround the gate region of the semiconductor structure.
18. The method of claim 17 , wherein the forming the first gate electrode further comprising:
forming (i) a first portion of the first gate electrode along the sidewalls of the first gate oxide in the gate region such that the first portion of the first gate electrode is surrounded by the gate region and (ii) a second portion of the first gate electrode extending from the first portion of the first gate electrode and through the second S/D region such that a top surface of the second portion of the first gate electrode is substantially level with a top surface of the second S/D region.
19. The method of claim 18 , wherein the forming the second gate electrode further comprising:
forming (i) a first portion of the second gate electrode along the sidewalls of the second gate oxide in the gate region such that the first portion of the second gate electrode surrounds the gate region and (ii) a second portion of the second gate electrode extending from the first portion of the second gate electrode in the vertical direction such that a top surface of the second portion of the second gate electrode is substantially level with the top surface of the second S/D region.
20. The method of claim 19 , wherein the forming the second dielectric layer further comprising:
forming a first portion of the second dielectric layer over the first portion of the first gate electrode and surrounding the second portion of the first gate electrode, the first portion of the second dielectric layer being positioned between the first gate oxide in the second S/D region and the second portion of the first gate electrode; and
forming a second portion of the second dielectric layer over the first portion of the second gate electrode and surrounding the second gate oxide in the second S/D region, the second portion of the second dielectric layer being positioned between the second portion of the second gate electrode and the second gate oxide in the second S/D region.