IP Library Granted Patent US 12,034,105
Granted Patent B2
US 12,034,105 · App. 17/459,930 · Granted Jul 9, 2024

Image display element

Inventors: Katsuji Iguchi (Fukuyama, JP); Hidenori Kawanishi (Fukuyama, JP); Shinsuke Anzai (Fukuyama, JP)
Assignee: Sharp Fukuyama Laser Co., Ltd.
H01L33/62G09G3/32H01L25/0753G09G2300/0426H01L25/167
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Quick Facts
Patent No.
US 12,034,105
App. No.
17/459,930
Granted
Jul 9, 2024
Kind
B2
Abstract

An image display element provides an image display element including a plurality of micro light-emitting elements arrayed in an array manner, and a semiconductor layer at which a drive circuit is disposed, the drive circuit being configured to supply a current to each of the plurality of micro light-emitting elements to cause light to be emitted, in which a transistor that constitutes the drive circuit and a wiring layer are disposed at a first surface of the semiconductor layer, the plurality of micro light-emitting elements are disposed at a second surface of the semiconductor layer that is an opposite side of the first surface, and the transistor and the wiring layer are electrically coupled to the micro light-emitting elements through a through substrate via that extends through the semiconductor layer.

Claims (47)

1. An image display element comprising:

a plurality of micro light-emitting elements arrayed in an array manner; and

a semiconductor layer at which a drive circuit is disposed, the drive circuit being configured to supply a current to each of the plurality of micro light-emitting elements to emit light, wherein

the drive circuit comprises a transistor, the transistor and a wiring layer are disposed at a first surface of the semiconductor layer,

the plurality of micro light-emitting elements is disposed at a second surface of the semiconductor layer that is an opposite side of the first surface,

the transistor and the wiring layer are electrically coupled to the plurality of micro light-emitting elements through a through substrate via that extends through the semiconductor layer,

the plurality of micro light-emitting elements includes:

a first electrode disposed at a light emitting surface side of the plurality of micro light-emitting elements; and

a second electrode having a polarity opposite a polarity of the first electrode and disposed at a surface at an opposite side of the light emitting surface, and

the second electrode is electrically conductive to the through substrate via.

2. The image display element according to claim 1 ,

wherein the through substrate via has a cross section in a plan view in which an insulating layer is disposed outside and a conductive body is disposed inside.

3. The image display element according to claim 1 ,

wherein the through substrate via corresponds to each of the plurality of micro light-emitting elements.

4. The image display element according to claim 1 ,

wherein, at the second surface, the through substrate via is entirely covered with an electrode connection section.

5. The image display element according to claim 1 ,

wherein, at the second surface, the through substrate via is entirely covered with electrodes of the micro light-emitting elements at one side.

6. The image display element according to claim 1 ,

wherein, at the first surface, the through substrate via is coupled to an N-type diffusion layer or a P-type diffusion layer.

7. The image display element according to claim 1 ,

wherein the second surface is covered with an insulating film except for the through substrate via.

8. The image display element according to claim 1 ,

wherein, at the second surface of the semiconductor layer, the through substrate via is covered with a diffusion layer having a conductivity type opposite to a semiconductor layer main body which is a inner part of the semiconductor layer.

9. The image display element according to claim 1 ,

wherein, in a pixel area where the plurality of micro light-emitting elements are disposed,

a first well where the transistor is disposed is disposed at a first surface side of the semiconductor layer, and a third well having a conductivity type opposite to the first well is disposed at the second surface side of the first well.

10. The image display element according to claim 9 ,

wherein the third well is coupled to the wiring layer through a second well having a conductivity type opposite to the first well.

11. An image display element comprising:

a plurality of micro light-emitting elements arrayed in an array manner; and

a semiconductor layer at which a drive circuit is disposed, the drive circuit being configured to supply a current to each of the plurality of micro light-emitting elements to emit light, wherein

the drive circuit comprises a transistor, the transistor and a wiring layer are disposed at a first surface of the semiconductor layer,

the plurality of micro light-emitting elements is disposed at a second surface of the semiconductor layer that is an opposite side of the first surface,

the transistor and the wiring layer are electrically coupled to the plurality of micro light-emitting elements through a through substrate via that extends through the semiconductor layer,

the plurality of micro light-emitting elements includes:

a first electrode disposed at a light emitting surface side of the plurality of micro light-emitting elements; and

a second electrode having a polarity opposite a polarity of the first electrode and disposed at a surface at an opposite side of the light emitting surface,

the second electrode is electrically conductive to the through substrate via,

a connection area is disposed outside of a pixel area where the plurality of micro light-emitting elements is disposed, and

in the connection area, a connection element that connects the first electrode of the plurality of micro light-emitting elements and the wiring layer is disposed and a through substrate via coupled to the connection element is disposed.

12. The image display element according to claim 1 ,

wherein the micro light-emitting elements include an excitation light emitting element and a wavelength conversion portion.

13. The image display element according to claim 1 ,

wherein a periphery of the micro light-emitting elements is surrounded by a partition formed at the second surface of the semiconductor layer.

14. The image display element according to claim 13 ,

wherein the partition includes a protruding portion disposed at the second surface of the semiconductor layer and comprised of the semiconductor layer.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 25, 2022
From: SHARP SEMICONDUCTOR INNOVATION CORPORATION
To: SHARP FUKUYAMA LASER CO., LTD.
Reel/Frame 059397/0124 →
CHANGE OF NAME Recorded Feb 23, 2022
From: SHARP FUKUYAMA SEMICONDUCTOR CO., LTD.
To: SHARP SEMICONDUCTOR INNOVATION CORPORATION
Reel/Frame 059235/0851 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 27, 2021
From: IGUCHI, KATSUJI; KAWANISHI, HIDENORI; ANZAI, SHINSUKE
To: SHARP FUKUYAMA SEMICONDUCTOR CO., LTD.
Reel/Frame 057316/0532 →
Priority Claims (1)
JP 2020-145706 · Aug 31, 2020 · national
Continuity (1)
Related Publication 20220069186A1 · Mar 3, 2022