Semiconductor devices and methods of manufacturing thereof
A semiconductor device includes a plurality of semiconductor layers vertically separated from one another. The semiconductor device includes a gate structure that comprises a lower portion and an upper portion, wherein the lower portion wraps around each of the plurality of semiconductor layers. The semiconductor device includes a gate spacer that extends along a sidewall of the upper portion of the gate structure and has a bottom surface. A portion of the bottom surface of the gate spacer and a top surface of a topmost one of the plurality of semiconductor layers form an angle that is less than 90 degrees.
1. A semiconductor device, comprising:
a plurality of semiconductor layers vertically separated from one another;
a gate structure that comprises a lower portion and an upper portion, wherein the lower portion wraps around each of the plurality of semiconductor layers;
an etch stop layer; and
a gate spacer that extends along a sidewall of the upper portion of the gate structure and has a bottom surface;
wherein a portion of the bottom surface of the gate spacer and a top surface of a topmost one of the plurality of semiconductor layers form an angle that is less than 90 degrees; and
wherein the etch stop layer extends between the portion of the bottom surface of the gate spacer and the top surface of the topmost semiconductor layer.
2. The semiconductor device of claim 1 , wherein the gate structure has a lower side portion extending between the portion of the bottom surface of the gate spacer and the top surface of the topmost semiconductor layer.
3. The semiconductor device of claim 1 , wherein the etch stop layer has a sidewall vertically aligned with the sidewall of the upper portion of the gate structure.
4. The semiconductor device of claim 1 , wherein the gate spacer comprises a plurality of dielectric layers.
5. The semiconductor device of claim 4 , wherein at least one of the plurality of dielectric layers has a tilted portion that forms the bottom surface of the gate spacer.
6. The semiconductor device of claim 5 , wherein the tilted portion is in contact with the top surface of the topmost semiconductor layer.
7. The semiconductor device of claim 5 , wherein the tilted portion extends away from the sidewall of the upper portion of the gate structure.
8. The semiconductor device of claim 1 , further comprising a source/drain structure coupled to the plurality of semiconductor layers, wherein source/drain structure is electrically isolated from the gate structure by the gate spacer.
9. A semiconductor device, comprising:
a fin structure disposed over a substrate, wherein the fin structure includes a plurality of semiconductor layers;
a gate structure that comprises a lower portion and an upper portion, wherein the lower portion straddles the fin structure;
a gate spacer that extends along a sidewall of the upper portion of the gate structure and comprises a vertical portion and tilted portion, wherein the vertical portion is in contact with the sidewall and the tilted portion overlays at least a first portion of a top surface of a topmost one of the plurality of semiconductor layers; and
an etch stop layer extending between the tilted portion and a second portion of the top surface of the topmost semiconductor layer that is not overlaid by the tilted portion.
10. The semiconductor device of claim 9 , wherein the plurality of semiconductor layers are vertically separated from one another, and the gate structure wraps around each of the plurality of semiconductor layers.
11. The semiconductor device of claim 9 , wherein the gate structure has a lower side portion extending between the tilted portion and a second portion of the top surface of the topmost semiconductor layer that is not overlaid by the tilted portion.
12. The semiconductor device of claim 9 , wherein the etch stop layer has a sidewall vertically aligned with the sidewall of the upper portion of the gate structure.
13. The semiconductor device of claim 9 , wherein the gate spacer comprises a plurality of dielectric layers.
14. The semiconductor device of claim 13 , wherein at least one of the plurality of dielectric layers has the tilted portion to form a bottom surface of the gate spacer.
15. The semiconductor device of claim 14 , wherein a portion of the bottom surface of the gate spacer and a second portion of the top surface of the topmost semiconductor layer that is not overlaid by the tilted portion form an angle less than 90 degrees.
16. A semiconductor device, comprising:
a plurality of semiconductor layers vertically separated from one another;
a gate structure that comprises a lower portion and an upper portion, wherein the lower portion wraps around each of the plurality of semiconductor layers;
a gate spacer that extends along a sidewall of the upper portion of the gate structure and has a bottom surface;
wherein a portion of the bottom surface of the gate spacer and a top surface of a topmost one of the plurality of semiconductor layers form an angle that is less than 90 degrees;
wherein the gate spacer comprises a plurality of dielectric layers;
wherein at least one of the plurality of dielectric layers has a tilted portion that forms the bottom surface of the gate spacer; and
wherein the tilted portion extends away from the sidewall of the upper portion of the gate structure.
17. The semiconductor device of claim 16 , wherein the gate structure has a lower side portion extending between the portion of the bottom surface of the gate spacer and the top surface of the topmost semiconductor layer.
18. The semiconductor device of claim 16 , wherein the tilted portion is in contact with the top surface of the topmost semiconductor layer.
19. The semiconductor device of claim 16 , further comprising a source/drain structure coupled to the plurality of semiconductor layers, wherein source/drain structure is electrically isolated from the gate structure by the gate spacer.
20. The semiconductor device of claim 16 , wherein the plurality of semiconductor layers are vertically separated from one another, and the gate structure wraps around each of the plurality of semiconductor layers.