Packaging glass substrate for semiconductor, a packaging substrate for semiconductor, and a semiconductor apparatus
A packaging glass substrate for semiconductor includes a glass substrate with a first surface and a second surface facing each other, and a plurality of core vias penetrating through the glass substrate in a thickness direction, wherein a plain line is a line linking places where the core vias are not formed, a via line is a line linking places where the core vias are formed, a stress difference value (P) is a value according to Equation (1), and the stress difference value (P) is 1.5 MPa or less, Equation (1): P=Vp−Np where P is a stress difference value measured at the same glass substrate, Vp is a difference between the maximum value and the minimum value of stress measured at the via line, and Np is a difference between the maximum value and the minimum value of stress measured at the plain line.
1. A packaging glass substrate for semiconductor comprising:
a glass substrate with a first surface and a second surface facing each other; and
a plurality of core vias penetrating through the glass substrate in a thickness direction,
wherein a plain line is a line linking places where the core vias are not formed,
wherein a via line is a line linking places where the core vias are formed, and
wherein a stress difference value (P) is a value according to Equation (1), and the stress difference value (P) is 1.5 MPa or less,
P=Vp−Np Equation (1)
where P is a stress difference value measured at the same glass substrate, Vp is a difference between the maximum value and the minimum value of stress measured at the via line, and Np is a difference between the maximum value and the minimum value of stress measured at the plain line.
2. The packaging glass substrate for semiconductor of claim 1 , wherein the Vp value is 2.5 MPa or less.
3. The packaging glass substrate for semiconductor of claim 1 , wherein the Np value is 1.0 MPa or less.
4. The packaging glass substrate for semiconductor of claim 1 , wherein the core vias are disposed in the number of 100 to 3000, based on a unit area (1 cm×1 cm) of the glass substrate.
5. A packaging substrate for semiconductor comprising:
the packaging glass substrate for semiconductor of claim 1 ;
a core layer disposed on a surface of the core via; and
a core seed layer configured as a seed for forming an electrically conductive layer.
6. The packaging substrate for semiconductor of claim 5 , wherein the electrically conductive layer comprises a core distribution pattern.
7. A semiconductor apparatus comprising:
a semiconductor element unit comprising one or more semiconductor elements;
the packaging substrate for semiconductor of claim 5 electrically connected to the semiconductor element unit; and
a motherboard electrically connected to the packaging substrate, transmitting electrical signals of the one or more semiconductor element units and externally, and connected to the one or more semiconductor elements.
8. A packaging glass substrate for semiconductor comprising:
a glass substrate with a first surface and a second surface facing each other; and
a plurality of core vias penetrating through the glass substrate in a thickness direction,
wherein a plain line is a line linking places where the core vias are not formed,
wherein a via line is a line linking places where the core vias are formed,
wherein a target line is a plain line or a via line, and
wherein a stress difference ratio (K) is a value according to Equation (2), and the stress difference ratio (K) is 6 or less,
K=Lp/La Equation (2)
where K is a stress difference ratio measured at the same plane of the same glass substrate, Lp is a difference between the maximum value and the minimum value of stress measured at the target line, and La is an average value of stress measured at the target line, and
wherein when Vp is a difference between the maximum value and the minimum value of stress measured at the via line and Np is a difference between the maximum value and the minimum value of stress measured at the plain line, the Vp is 0.2 MPa to 2.5 MPa and the Np is 0.2 MPa to 1.0 MPa.
9. The packaging glass substrate for semiconductor of claim 8 ,
wherein the target line is a plain line, and
wherein the stress difference ratio (K) is 2 or less.
10. The packaging glass substrate for semiconductor of claim 8 , wherein the target line is a via line.
11. The packaging glass substrate for semiconductor of claim 8 , wherein the core vias are disposed in the number of 100 to 3000, based on a unit area (1 cm×1 cm) of the glass substrate.
12. A packaging substrate for semiconductor comprising:
the packaging glass substrate for semiconductor of claim 8 ;
a core layer disposed on a surface of the core via; and
a core seed layer configured as a seed for forming an electrically conductive layer.
13. The packaging substrate for semiconductor of claim 12 , wherein the electrically conductive layer comprises a core distribution pattern.
14. A semiconductor apparatus comprising:
a semiconductor element unit comprising one or more semiconductor elements;
the packaging substrate for semiconductor of claim 12 electrically connected to the semiconductor element unit; and
a motherboard electrically connected to the packaging substrate, transmitting electrical signals of the one or more semiconductor elements and external signals, and connected to the semiconductor element unit.