Complementary FET (CFET) buried sidewall contact with spacer foot
A CFET includes a fin that has a bottom channel portion, a top channel portion, and a channel isolator between the bottom channel portion and the top channel portion. The CFET further includes a source and drain stack that has a bottom source or drain (S/D) region connected to the bottom channel portion, a top S/D region connected to the top channel portion, a source-drain isolator between the bottom S/D region and the top S/D region. The CFET further includes a spacer foot physically connected to a base sidewall portion of the bottom S/D region and a buried S/D contact that is physically connected to an upper sidewall portion of the bottom S/D region. The CFET may further include a common gate around the bottom channel portion, around the top channel portion, and around the channel isolator.
1. A semiconductor device comprising:
a fin comprising a bottom channel portion, a top channel portion, and a channel isolator between the bottom channel portion and the top channel portion;
a source and drain stack comprising a bottom source or drain (S/D) region connected to the bottom channel portion, a top S/D region connected to the top channel portion, and a source-drain isolator directly connected with both and in between the bottom S/D region and the top S/D region;
a spacer foot directly connected to a base sidewall portion of the bottom S/D region; and
a buried S/D contact directly connected to an upper sidewall portion of the bottom S/D region that is above the spacer foot.
2. The semiconductor device of claim 1 , wherein the buried contact is further directly connected to a buried power rail.
3. The semiconductor device of claim 2 , further comprising:
a top S/D contact directly connected to an upper surface of the top S/D region.
4. The semiconductor device of claim 1 , wherein a top surface of the buried S/D contact is between a top surface of the source-drain isolator and a bottom surface of the source-drain isolator.
5. The semiconductor device of claim 1 , a common gate around the bottom channel portion, around the top channel portion, and around the channel isolator.
6. The semiconductor device of claim 1 , wherein the buried S/D contact is further directly connected to a top surface of the spacer foot and physically connected to a sidewall of the spacer foot.
7. The semiconductor device of claim 1 , wherein an entire top surface of the bottom S/D region is covered by the source-drain isolator that is directly connected thereto.
8. A semiconductor device comprising:
a fin pair comprising: a first fin comprising a first bottom channel portion, a first top channel portion, and a first channel isolator between the first bottom channel portion and the first top channel portion; and a second fin comprising a second bottom channel portion, a second top channel portion, and a second channel isolator between the second bottom channel portion and the second top channel portion;
a source and drain stack comprising a bottom source or drain (S/D) region connected to the first bottom channel portion and to the second bottom channel portion, a top S/D region connected to the first top channel portion and to the second top channel portion, a source-drain isolator directly connected with both and in between the bottom S/D region and the top S/D region;
a spacer foot directly connected to a base sidewall portion of the first bottom S/D region; and
a buried S/D contact directly connected to an upper sidewall portion of the first bottom S/D region.
9. The semiconductor device of claim 8 , wherein the buried contact is further directly connected to a buried power rail.
10. The semiconductor device of claim 9 , further comprising:
a top S/D contact directly connected to an upper surface of the first top S/D region.
11. The semiconductor device of claim 8 , wherein a top surface of the buried S/D contact is between a top surface of the source-drain isolator and a bottom surface of the source-drain isolator.
12. The semiconductor device of claim 8 , further comprising: a common gate around the fin pair.
13. The semiconductor device of claim 8 , wherein the buried S/D contact is further directly connected to a top surface of the spacer foot and directly connected to a sidewall of the spacer foot.
14. The semiconductor device of claim 8 , wherein sidewalls of the source-drain isolator are coplanar and vertically aligned with respective sidewalls of the bottom S/D region and are coplanar and vertically aligned with respective sidewalls of the top S/D region.