Methods and apparatuses for microscopy and spectroscopy in semiconductor systems
A defect detection and imaging system is presented for performing microscopy and/or spectroscopy on a device under test. The defect detection system comprises a controller for toggling the state of a light source, which may allow for fast simultaneous high-speed inspection and high-resolution review imaging of the device under test by the same system and simultaneously deliver inspection, computer generated reconstructions or tomography, and defect review on sub second time-scales. The defect detection system further comprises a converter for converting X-ray images of the device under test into photoelectron contrast images to achieve nanometer scale measurement resolution in non-destructive and real-time fashion, to complement or replace destructive TEM. These photoelectron contrast images may be received by a detector to output an electronic format map or 3D/4D image that indicates one or more features of the device under test.
1. A system comprising:
a source controller that controls one or more cycles of a light emitting device, wherein a cycle of the one or more cycles comprises an on state and an off state, wherein
during a first cycle of the one or more cycles, the light emitting device images a first portion of a device under test at a first magnification level;
during a second cycle of the one or more cycles, the light emitting device images a second portion of the device under test at a second magnification level;
a converter that, based at least in part on one or more images of the light emitting device, indicates one or more properties of the device under test;
a detector that, based at least in part on the one or more properties of the device under test, generates at least one electronic map; and
the detector further outputs the at least one electronic file for the electronic map.
2. The system of claim 1 , wherein a cycle of the one or more cycles has a duration of less than 1 second.
3. The system of claim 1 , wherein the first cycle of the one or more cycles and the second cycle of the one or more cycles are both less than 1 second.
4. The system of claim 1 , wherein the converter is a photocathode comprising an electrically conductive layer with a thickness between 0.1 nanometer and 10 nanometers.
5. The system of claim 1 , wherein the converter is a photocathode that has a mean transverse energy of less than 0.1 eV and the photocathode has energy spreads of less than 0.050 eV for photoelectrons.
6. The system of claim 1 , wherein the detector comprises a charged coupled device (CCD) camera or a scientific complementary metal-oxide semiconductor (sCMOS) camera or a complementary metal-oxide semiconductor (CMOS) camera.
7. The system of claim 1 , wherein the detector generates a photoelectron contrast image that one or more indications of attenuation or changes in phase coherence based at least in part on the light beam being incident on the device under test.
8. The system of claim 1 , wherein the light beam is an X-ray comprising of spatially coherent X-rays.
9. The system of claim 1 , wherein the one or more properties of the device under test comprises a crack, break, or an air gap within the device under test.
10. The system of claim 1 , wherein the one or more properties of the device under test comprises solder joint defects within the device under test.
11. The system of claim 1 , wherein the one or more properties of the device under test comprises a chemical makeup of one or more portions of the device under test.
12. A method comprising:
cycling, via a source controller, a light emitting device between one or more cycles, wherein a cycle of the one or more cycles comprises an on state and an off state;
imaging, during a first cycle of the one or more cycles, a device under test at a first magnification level to produce a first image;
imaging, during a second cycle of the one or more cycles, the device under test at a second magnification level to produce a second image;
generating, via a converter, based at least in part on one or more images, an indication of at least one or more properties of the device under test;
generating, via a detector, based at least in part on the one or more properties of the device under test, at least one electronic map; and
outputting the at least one electronic file for the electronic map.
13. The method of claim 11 , wherein a cycle of the one or more cycles has a duration of less than 1 second.
14. The method of claim 11 , wherein the first cycle of the one or more cycles and the second cycle of the one or more cycles are both less than 1 second.
15. The method of claim 11 , wherein the converter is a photocathode comprising an electrically conductive layer with a thickness between 0.1 nanometer and 10 nanometers.
16. The method of claim 11 , wherein the converter is a photocathode that has a mean transverse energy of less than 0.1 eV and the photocathode has energy spreads of less than 0.050 eV for photoelectrons.
17. The method of claim 11 , wherein the detector comprises a charged coupled device (CCD) camera or a scientific complementary metal-oxide semiconductor (sCMOS) camera or a complementary metal-oxide semiconductor (CMOS) camera.
18. The method of claim 11 , wherein the one or more images comprises one or more indications of attenuation or changes in phase coherence based at least in part on the light beam being incident on the device under test.
19. The method of claim 11 , wherein the light beam is an X-ray comprising of spatially coherent X-rays.
20. The method of claim 11 , wherein the one or more properties of the device under test comprises a crack, break, or an air gap within the device under test.