Semiconductor device

1. A semiconductor device comprising:

a semiconductor chip having a first electrode on a first region of a first surface of the semiconductor chip and a second electrode on a second region of the first surface of the semiconductor chip;

a first metal plate;

a first conductive bonding sheet disposed between the first region of the first surface of the semiconductor chip and the first metal plate, and configured to bond the first electrode to the first metal plate;

a second metal plate;

a second conductive bonding sheet disposed between the second region of the first surface of the semiconductor chip and the second metal plate, and configured to bond the second electrode to the second metal plate;

a substrate having a metal film and a third conductive bonding sheet, wherein a third electrode is on a second surface of the semiconductor chip opposite the first surface, and the third electrode is bonded to the metal film through the third conductive bonding sheet;

a second semiconductor chip having a fourth electrode on a first region of a first surface of the second semiconductor chip and a fifth electrode on a second region of the first surface of the second semiconductor chip;

a third metal plate and a fourth metal plate;

a fourth conductive bonding sheet disposed between the first region of the first surface of the second semiconductor chip and the third metal plate, and configured to bond the fourth electrode to the third metal plate; and

a fifth conductive bonding sheet disposed between the second region of the first surface of the second semiconductor chip and the fourth metal plate, and configured to bond the fifth electrode to the fourth metal plate;

wherein a sixth electrode on a second surface of the second semiconductor chip opposite the first surface of the second semiconductor chip is bonded to a second metal film of the substrate through a sixth conductive bonding sheet;

wherein the first metal plate and the second metal plate are electrically connected by a first wiring, the second metal plate and the second metal film are electrically connected by a second wiring, and the third metal plate and the fourth metal plate are electrically connected by a third wiring.

2. The semiconductor device of claim 1 , wherein the first conductive bonding sheet comprises one or more kinds of metal particles selected from a group consisting of Ag particles having a primary particle diameter of 10 nm or more and 5 μm or less, Cu particles having a primary particle diameter of 10 nm or more and 5 μm or less, and Ni particles having a primary particle diameter of 10 nm or more and 5 μm or less.

3. The semiconductor device of claim 1 , wherein a maximum distance between an outer periphery of the first electrode and an outer periphery of the first conductive bonding sheet that is closest to the outer periphery of the first electrode is 0.1 mm or less.

4. The semiconductor device of claim 1 , wherein an average distance between an outer periphery of the first electrode and an outer periphery of the first conductive bonding sheet that is closest to the outer periphery of the first electrode is 0.1 mm or less.

5. The semiconductor device of claim 1 , wherein the first conductive bonding sheet has a surface that faces a surface of the first electrode, wherein when an outer periphery region of the first electrode overlaps with an outer periphery region of the first conductive bonding sheet, a sum of a first area of the surface of the first conductive bonding sheet that protrudes outside the outer periphery of the first electrode and a second area of the surface of the first electrode that does not overlap the first conductive bonding sheet is 5% or less of an area of the first electrode.

6. The semiconductor device of claim 1 , comprising a plurality of semiconductor chips including the semiconductor chip, and the plurality of semiconductor chips are bonded to the first metal plate via the first conductive bonding sheet.