Ripple carry adder with ferroelectric or paraelectric wide-input minority or majority gates
A low power adder uses a non-linear polar capacitor to retain charge with fewer transistors than traditional CMOS sequential circuits. The non-linear polar capacitor includes ferroelectric material, paraelectric material, or non-linear dielectric. The adder may include minority gates and/or majority gates. Input signals are received by respective terminals of capacitors having non-linear polar material. The other terminals of these capacitors are coupled to a node where the majority function takes place for the inputs.
1. An apparatus comprising:
a first 1-bit adder to receive a first input, a second input, and a third input, wherein the first input is a first operand, wherein the second input is a second operand, wherein the third input is a carry-in input, wherein the third input is coupled to ground, and wherein the first 1-bit adder is to generate a first sum output and a first carry output; and
a second 1-bit adder coupled to the first 1-bit adder, wherein the second 1-bit adder is to receive a fourth input, a fifth input, and a sixth input, wherein the fourth input is a third operand, wherein the fifth input is a fourth operand, wherein the sixth input is a carry-in input, wherein the sixth input is coupled to the first sum output, wherein the second 1-bit adder is to generate a second sum output and a second carry output, wherein the first 1-bit adder includes a first set of input capacitors with non-linear polar material, wherein the second 1-bit adder includes a second set of input capacitors with the non-linear polar material, wherein the first set of input capacitors include at least three input capacitors, wherein first terminals of the at least three input capacitors are directly connected without magnets to the first input, the second input, and the third input respectively, and wherein second terminals of the at least three input capacitors are directly connected without magnets to a node.
2. The apparatus of claim 1 , wherein the first 1-bit adder comprises:
a 3-input majority gate to receive the first input, the second input, and the third input; and
a 5-input majority gate to receive the first input, the second input, the third input, a first inverted output of the 3-input majority gate, and a second inverted output of the 3-input majority gate.
3. The apparatus of claim 2 comprising an inverter coupled to an output of the 3-input majority gate.
4. The apparatus of claim 3 , wherein an output of the inverter is coupled to two inputs of the 5-input majority gate.
5. The apparatus of claim 2 , wherein an output of the 3-input majority gate is the first carry output, and wherein an output of the 5-input majority gate is the first sum output.
6. The apparatus of claim 2 , wherein the 3-input majority gate and the 5-input majority gate include the non-linear polar material.
7. The apparatus of claim 2 , wherein the 3-input majority gate comprises:
a first capacitor to receive the first input, the first capacitor coupled to the node;
a second capacitor to receive the second input, the second capacitor coupled to the node; and
a third capacitor to receive the third input, wherein the third capacitor is coupled to the node, and wherein the first capacitor, the second capacitor, and the third capacitor include the non-linear polar material.
8. The apparatus of claim 2 , wherein the 5-input majority gate comprises:
a first capacitor to receive the first input, the first capacitor coupled to a node;
a second capacitor to receive the second input, the second capacitor coupled to the node;
a third capacitor to receive the third input, wherein the third capacitor is coupled to the node;
a fourth capacitor to receive the first inverted output of the 3-input majority gate, wherein the fourth capacitor is coupled to the node; and
a fifth capacitor to receive the second inverted output of the 3-input majority gate, wherein the fifth capacitor is coupled to the node, and wherein the first capacitor, the second capacitor, the third capacitor, the fourth capacitor, and the fifth capacitor include the non-linear polar material.
9. The apparatus of claim 1 , wherein the non-linear polar material includes one of: a ferroelectric material, a paraelectric material, or a non-linear dielectric.
10. The apparatus of claim 9 , wherein the ferroelectric material includes one of:
bismuth ferrite (BFO) or BFO with a first doping material, wherein the first doping material is one of lanthanumor elements from lanthanide series of periodic table;
lead zirconium titanate (PZT) or PZT with a second doping material, wherein the second doping material is one of La or Nb;
a relaxor ferroelectric which includes one of: lead magnesium niobate (PMN), lead magnesium niobate-lead titanate (PMN-PT), lead lanthanum zirconate titanate (PLZT), lead scandium niobate (PSN), barium titanium-bismuth zinc niobium tantalum (BT-BZNT), or barium titanium-barium strontium titanium (BT-BST);
a perovskite which includes one of: BaTiO 3 , PbTiO 3 , KNbO 3 , or NaTaO 3 ;
a hexagonal ferroelectric which includes one of: YMnO 3 , or LuFeO 3 ;
hexagonal ferroelectrics of a type h-RMnO 3 , where R is a rare earth element which includes one of: cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), ytterbium (Yb), or yttrium (Y);
hafnium (Hf), zirconium (Zr), aluminum (Al), silicon (Si), their oxides, or their alloyed oxides;
hafnium oxides as Hf (1-x) E x O y , where E includes one of: Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, Zr, or Y, where x and y are first and second fractions, respectively;
Al (1-x) Sc (x) N, Ga (1-x) Sc (x) N, Al (1-x) Y (x) N or Al (1-x-y) Mg (x) N (y) N, where x and y are third and fourth fractions, respectively;
y doped HfO 2 , where y includes one of: Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y;
niobate type compounds LiNbO 3 , LiTaO 3 , lithium iron tantalum oxy fluoride, barium strontium niobate, sodium barium niobate, or potassium strontium niobate; or
an improper ferroelectric which includes one of: [PTO/STO]n or [LAO/STO]n, where ‘n’ is between 1 and 100.
11. The apparatus of claim 9 , wherein the paraelectric material includes one of: SrTiO 3 , Ba (x) Sr (y) TiO 3 , HfZrO 2 , Hf—Si—O, La-substituted PbTiO 3 , or PMN-PT based relaxor ferroelectrics.
12. A system comprising:
a processor circuitry to execute one or more instructions;
a communication interface communicatively coupled to the processor circuitry; and
a memory coupled to the processor circuitry, wherein the processor circuitry comprises an adder circuitry which includes:
a first 1-bit adder to receive a first input, a second input, and a third input, wherein the first input is a first operand, wherein the second input is a second operand, and wherein the third input is a carry-in input, wherein the third input is coupled to ground, and wherein the first 1-bit adder is to generate a first sum output and a first carry output; and
a second 1-bit adder coupled to the first 1-bit adder, wherein the second 1-bit adder is to receive a fourth input, a fifth input, and a sixth input, wherein the fourth input is a third operand, wherein the fifth input is a fourth operand, and wherein the sixth input is a carry-in input, wherein the sixth input is coupled to the first sum output, wherein the second 1-bit adder is to generate a second sum output and a second carry output, wherein the first 1-bit adder includes a first set of input capacitors with non-linear polar material, wherein the second 1-bit adder includes a second set of input capacitors with the non-linear polar material, wherein the first set of input capacitors includes at least three input capacitors, wherein first terminals of the at least three input capacitors are directly connected without magnets to the first input, the second input, and the third input respectively, and wherein second terminals of the at least three input capacitors are directly connected without magnets to a node.
13. The system of claim 12 , the first 1-bit adder comprises:
a 3-input majority gate to receive the first input, the second input, and the third input; and
a 5-input majority gate to receive the first input, the second input, the third input, a first inverted output of the 3-input majority gate, and a second inverted output of the 3-input majority gate.
14. The system of claim 13 , wherein the 3-input majority gate comprises:
a first capacitor to receive the first input, the first capacitor coupled to the node;
a second capacitor to receive the second input, the second capacitor coupled to the node; and
a third capacitor to receive the third input, wherein the third capacitor is coupled to the node, wherein the first capacitor, the second capacitor, and the third capacitor include a non-linear polar material.
15. The system of claim 12 , wherein the non-linear polar material includes one of: a ferroelectric material, a paraelectric material, or a non-linear dielectric.