Vertical memory devices

1. A method for fabricating semiconductor device, comprising:

characterizing an etch process that is used to etch channel holes and dummy channel holes in a stack of alternating sacrificial gate layers and insulating layers upon a substrate of a semiconductor device, the channel holes being in a core region and the dummy channel holes being in a staircase region, the stack of alternating sacrificial gate layers and insulating layers extending from the core region into in the staircase region of a stair-step form; and

determining a first shape for defining the dummy channel holes in a layout based on the characterization of the etch process, the first shape being different from a second shape for defining the channel holes;

wherein the determining the first shape includes:

determining a capsule shape and a bone shape for the dummy channel holes that are different from a circle shape of the channel holes,

determining a capsule shape and an arc shape for the dummy channel holes that are different from a circle shape of the channel holes,

determining a bone shape for the dummy channel holes that is different from a circle shape of the channel holes,

determining an arc shape for the dummy channel holes that is different from a circle shape of the channel holes,

or

determining a rectangle shape for the dummy channel holes that is different from a circle shape of the channel holes, wherein three of the dummy channel holes are arranged around a contact structure on three sides of a hexagonal pattern with regard to the contact structure, the three sides separated from one another.

2. The method of claim 1 , further comprising:

generating the layout for the semiconductor device, the layout having first instances of the first shape in a first area of the layout corresponding to the staircase region, and having second instances of the second shape in a second area of the layout corresponding to the core region.

3. The method of claim 2 , further comprising:

generating a mask layer in the layout to differentiate the core region and the staircase region, the mask layer being used to form first dummy channel structures corresponding to the dummy channel holes in the staircase region with different materials from channel structures corresponding to the channel holes in the core region.

4. The method of claim 1 , comprising:

the determining the capsule shape and the bone shape for the dummy channel holes that are different from the circle shape of the channel holes.

5. The method of claim 1 , comprising:

the determining the capsule shape and the arc shape for the dummy channel holes that are different from the circle shape of the channel holes.

6. The method of claim 1 , comprising:

the determining the bone shape for the dummy channel holes that is different from the circle shape of the channel holes.

7. The method of claim 1 , comprising:

the determining the arc shape for the dummy channel holes that is different from the circle shape of the channel holes.

8. The method of claim 7 , wherein at least two of the dummy channel holes have different lengths.

9. The method of claim 1 , comprising:

determining a rectangle shape for the dummy channel holes that is different from a circle shape of the channel holes, wherein the three of the dummy channel holes are arranged around the contact structure on the three sides of the hexagonal pattern with regard to the contact structure, the three sides separated from one another.

10. A semiconductor device, comprising:

gate layers and insulating layers that are stacked alternatingly along a first direction perpendicular to a substrate of the semiconductor device in a first region upon the substrate, wherein the gate layers and the insulating layers are stacked of a stair-step form in a second region upon the substrate;

channel holes that are disposed in the first region and extend in the first direction, wherein the channel holes are through the gate layers and the insulating layers, and the channel holes and the gate layers form a stack of transistors in a series configuration;

a contact structure disposed in the second region to form a conductive connection with one of the gate layers; and

multiple dummy channel holes that are disposed around the contact structure in a non-symmetric configuration with regard to the contact structure,

wherein

the dummy channel holes are patterned with a capsule shape and a bone shape that are different from a circle shape of the channel holes,

the dummy channel holes are patterned with a capsule shape and an arc shape that are different from a circle shape of the channel holes,

the dummy channel holes are patterned with a bone shape that is different from a circle shape of the channel holes,

the dummy channel holes are patterned with an arc shape that is different from a circle shape of the channel holes,

or

the dummy channel holes are patterned with a rectangle shape that is different from a circle shape of the channel holes, and three of the dummy channel holes are arranged around a contact structure on three sides in a hexagonal pattern with regard to the contact structure, the three sides separated from one another.

11. The semiconductor device of claim 10 , wherein the dummy channel holes are patterned with the capsule shape and the bone shape that are different from the circle shape of the channel holes.

12. The semiconductor device of claim 10 , wherein the dummy channel holes are patterned with the capsule shape and the arc shape that are different from the circle shape of the channel holes.

13. The semiconductor device of claim 10 , wherein the dummy channel holes are patterned with the bone shape that is different from the circle shape of the channel holes.

14. The semiconductor device of claim 10 , wherein the dummy channel holes are patterned with the arc shape that is different from the circle shape of the channel holes.

15. The semiconductor device of claim 14 , wherein at least two of the dummy channel holes have different lengths.

16. The semiconductor device of claim 10 , wherein the dummy channel holes are patterned with a rectangle shape that is different from a circle shape of the channel holes, and the three of the dummy channel holes are arranged around the contact structure on the three sides in the hexagonal pattern with regard to the contact structure, the three sides separated from one another.