Manufacturing method of display substrate and display device
The present disclosure provides a display substrate including: a base substrate, and a thin film transistor, an oxygen supplementing functional layer and an oxygen containing layer formed on the base substrate. The thin film transistor includes: an active layer in direct contact with the oxygen containing layer, and the active layer includes an oxide semiconductor material. The oxygen supplementing functional layer includes a metal oxide material and serves as a first electrode of the display substrate. The oxygen containing layer is between the oxygen supplementing functional layer and the base substrate.
1. A method of manufacturing a display substrate, comprising:
forming a thin film transistor, an oxygen containing layer and an oxygen supplementing functional layer on a base substrate, wherein
forming the thin film transistor comprises forming an active layer, wherein the forming the active layer comprises depositing an oxide semiconductor material and performing a patterning process on the oxide semiconductor material,
forming the oxygen containing layer comprises depositing an oxygen containing layer material to form the oxygen containing layer before or after forming the active layer, such that the oxygen containing layer is in direct contact with the active layer; and
forming the oxygen supplementing functional layer comprises depositing a metal oxide material on a side of the oxygen containing layer distal to the base substrate to form a metal oxide film by a sputtering deposition process in a sputtering deposition process environment containing oxygen; and performing a patterning process on the metal oxide film to obtain a pattern of the oxygen supplementing functional layer, such that the oxygen supplementing functional layer serves as a first electrode of the display substrate, and the first electrode is any one of a pixel electrode, a common electrode or an anode of an organic light emitting diode;
the method further comprises performing a high temperature treatment process to cause oxygen ions contained in the oxygen containing layer to be diffused into the active layer after forming the oxygen supplementing functional layer.
2. The method of manufacturing a display substrate of claim 1 , wherein the forming the thin film transistor further comprises forming a gate electrode such that the oxygen containing layer is between the gate electrode and the active layer, and serves as a gate insulating layer and the oxygen containing layer is formed between forming the gate electrode and forming the active layer, and
the forming the thin film transistor further comprises: forming source and drain electrodes on a side of the active layer distal to the base substrate; and
the oxygen supplementing functional layer is formed on the gate insulating layer.
3. The method of manufacturing a display substrate of claim 1 , wherein the forming the thin film transistor further comprises: forming a gate electrode, such that the oxygen containing layer is between the gate electrode and the active layer, and serves as a gate insulating layer, and the oxygen containing layer is formed between forming the gate electrode and forming the active layer, and
the forming the thin film transistor further comprises: forming source and drain electrodes on a side of the active layer distal to the base substrate;
the method further comprises: forming a second passivation layer on a side of the source and drain electrodes distal to the base substrate, and both the gate insulating layer and the second passivation layer serve as the oxygen containing layer, and
the oxygen supplementing functional layer is formed on the second passivation layer.
4. The method of manufacturing a display substrate of claim 1 , wherein the performing a high temperature treatment process to cause oxygen ions contained in the oxygen containing layer to be diffused into the active layer comprises:
forming a first passivation layer on a side of the oxygen supplementing functional layer distal to the base substrate by a deposition process in a deposition process environment, such that the oxygen ions in the oxygen containing layer are diffused into the active layer.
5. The method of manufacturing a display substrate of claim 1 , wherein the metal oxide material comprises indium tungsten oxide or indium molybdenum oxide, and
the depositing a metal oxide material on a side of the oxygen containing layer distal to the base substrate to form a metal oxide film by a sputtering deposition process in a sputtering deposition process environment containing oxygen comprising: depositing a metal oxide material on a side of the oxygen containing layer distal to the base substrate to form a metal oxide film by a sputtering deposition process in a sputtering deposition process environment containing oxygen in which a proportion of an oxygen partial pressure is more than or equal to 20%.
6. The method of manufacturing a display substrate of claim 5 , wherein the oxygen supplementing functional layer has a thickness greater than 50 nm in a direction perpendicular to the base substrate.
7. The method of manufacturing a display substrate of claim 1 , wherein the metal oxide material comprises a conductive indium gallium zinc oxide or a conductive indium tin oxide, and
the depositing a metal oxide material on a side of the oxygen containing layer distal to the base substrate to form a metal oxide film by a sputtering deposition process in a sputtering deposition process environment containing oxygen comprising: depositing a metal oxide material on a side of the oxygen containing layer distal to the base substrate to form a metal oxide film by a sputtering deposition process in a sputtering deposition process environment containing oxygen in which a proportion of an oxygen partial pressure is more than or equal to 50%.
8. The method of manufacturing a display substrate of claim 7 , wherein the oxygen supplementing functional layer has a thickness more than 20 nm in the direction perpendicular to the base substrate.